A Study on Korean Cultural Identity for Cultural Exchange : Focused on Traditional Art Culture

본 논문은 문화교류를 위한 한국적 문화정체성에 관한 연구이다. 이를 위해 본 연구에서는 한국의 문화정체성을 전통문화에서 찾고자 하였다. 특히 전통미술문화에 주목하고 그것이 실제 문화교류에서 어떻게 활용되고 있으며 교류활동이 남긴 과제와 전망에 대하여 살펴보았다. 문화가 정체성을 형성하는 중요한 요소라고 할 때, 문화정체성에 관한 문제는 중요하게 다루어져야 한다. 문화가 다양화되고 세계화될수록 정체성은 강하게 요구되고 전통의 고유성에 바탕을 둔 독자적 문화의 필요성은 더욱 커지게 된다. 여기에서 민족이나 지역을 바탕으로 하는 독특하고 고유한 삶의 총체로서 전통문화가 중요하게 부각된다. 전통예술 분야는 전통문화 중 가장 개성적 특질을 보여주는 것으로서 국가가 대외적으로 홍보할 수 있는 대표적 정신문화로 활용될 수 있다. 그중 본 논문이 유형(有形)의 예술인 전통미술을 중요하게 다루고자 하는 이유는 그것이 오랜 과거로부터 현대까지 모든 시대에 걸쳐 작품을 남기고 있어 역사적 과정을 밝히고 통사를 엮어낼 수 있는 분야이기 때문이다. 이러한 이유로 문화교류에서 한국의 문화사를 총체적으로 보여주고자 할 때 문화재로 불리는 전통미술 자료에 주목하게 되는 것이고, 따라서 전통미술문화의 특징에 관한 연구가 필요해진다. 한 국가의 문화정체성을 알리는 데에 문화교류만큼 거부감이 적으면서 효율적인 수단도 없을 것이지만, 그것의 효과가 빠른 시일 내에 나타나는 것이 아니므로 지속적이고 전략적인 문화정책과 그에 기반을 둔 교류활동을 필요로 한다. 지금까지 한국의 문화교류의 기본방향은 외국에 대한 한국문화의 소개로 정리되는데 이는 미술을 중심으로 하는 문화교류의 범위에서도 크게 다르지 않아서 전통미술 문화재를 해외의 박물관 등에서 전시하는 것으로 교류전이 이루어지고 있다. 이러한 한국문화재의 해외전시는 동양문화에서 한국문화가 가지는 독창성과 중요성을 보여주어 외국의 박물관에 별도의 한국전시실을 만드는 성과로 귀결되었고 이를 거점으로 한국의 문화를 지속적으로 알리는 것이 가능해졌다. 이에 본 논문에서는 앞으로의 발전적인 문화교류를 위하여 몇 가지 과제와 전망을 살펴보았다. 첫째, 앞으로의 문화교류는 지금까지의 교류에서 보이는 것과 같은 선진국 위주의 편향된 교류를 벗어나 문화의 유형과 특성에 따라 지역별로 접근되어야 한다는 것이다. 둘째, 문화정체성을 알리기 위해서는 교류가 지속적으로 이루어지는 것이 중요하기 때문에 문화교류의 진행방법에 변화가 필요하다는 것이다. 방법 면에서 지금까지의 문화교류는 홍보의 형식이 주를 이루고 있는데 이것을 개선하여 쌍방향 교류가 이루어지도록 해야 한다는 것이다. 셋째, 지금까지의 문화교류가 전통문화에 집중되어 있는 것은 한국의 문화정체성의 바탕으로서 그것이 가지는 중요도가 그만큼 큰 것이었음을 뜻하는 것이므로 이를 활용하여 전통미술문화의 현대화 작업이 병행되면 좋을 것이다. 넷째, 문화 전달자로서 개인의 역할이 증대되었음을 고려해보아야 한다. 각각의 개인이 한국 문화정체성의 바탕으로서 전통미술문화에 대한 충분한 이해가 이루어진다면 세계 속의 한국문화를 알리는 전달자로서의 역할에 보다 충실할 수 있을 것이기 때문이다. 마지막으로, 문화교류의 기획자이자 조정자로서 큐레이터와 같은 현장 전문가를 육성하는 작업이 꾸준히 진행되어야 한다는 것이다. 또한 내용면에서 풍성한 전시를 위해 한국의 전통미술문화에 관한 연구서적과 논문 등이 전시도록과 함께 소개되는 것이 좋을 것이다. 이러한 과제들이 수행됨으로써 전통미술문화를 중심으로 활용하는 앞으로의 문화교류에서 한국의 문화정체성을 효과적으로 알리게 되어 더욱 발전적인 결과를 창출할 수 있을 것으로 기대된다.;This dissertation is a study of Korean cultural identity for cultural exchange. The study assumes that Korean cultural identity can be found from traditional culture. The study examined how traditional art culture was utilized in actual cultural exchanges, and what the interaction suggests as tasks, as well as its prospects. Considering that culture is an important elements in forming identity, issues concerning cultural identity must be dealt with great importance. As culture is diversifying and globalizing, cultural identity is being strongly required and the necessity of independent culture based on traditional peculiarity is highly increasing. Thus traditional culture is distinguished significantly as the whole of unique and original life based on race or region. Traditional art has the most individual character among traditional cultures that can be utilized as a representative spirit culture for a country to generate publicity aborad. Because of the above reasons, the study pays attention in traditional art materials designated as cultural assets when showing the Korean history as a whole at cultural exchanges. Therefore, it is necessary to study the characteristics of traditional art culture. Without a doubt, cultural exchange is the most efficient means to inform the cultural identity of a certain country. However, it needs continuous and strategic cultural policies and exchange activities based on the cultural policies since its effect is not happened within rapid times. Until now basic directions of cultural exchanges in Korea is arranged as an introduction of Korean culture to foreign countries. This is also similar in scope of arts-centered cultural exchanges, thus exchange exhibitions are held in museums overseas by exhibiting cultural assets of traditional art. These exhibitions abroad of Korean cultural assets demonstrated the originality and importance of Korean culture within the Oriental culture and obtained results organizing exhibit halls exclusively for Korean expositions in foreign museums. This enabled continuous promotion of Korean culture. Consequently, this paper examines several assignments and prospects for constructive cultural exchange in the future. First, further cultural exchange should approach each region according to its cultural type and characteristic, deviating from current exchanges biasing for advanced countries. Second, change is needed in the cultural exchange process since constant interaction is important to popularize cultural identity. Cultural exchange should make improvements to achieve two-way exchange rather than focusing on public relations as done now. Third, cultural exchange has been paid attention to traditional culture until now. It means that it is greatly important as a foundation of Korean cultural identity. Therefore, modernization of traditional art culture should be carried out together with exchange of traditional culture. Fourth, we should consider the fact that as a cultural messenger, the role of each individual has increased. Understanding thoroughly about traditional art culture as the base of Korean culture identity, each individual can fully perform as Korean culture messenger in the world. Finally, field specialists as planner and coordinator of cultural exchange, such as curators should be consistently cultivated. Also, for exhibitions abundant in contents, it is advised to include introduction of research books and papers on Korean traditional art culture in the exhibition pamphlets. Achieving these assignments, in culture exchanges afterwards mainly working on traditional art culture, much productive results are anticipated through successfully publicizing Korean cultural identity.I. 서론 = 1 II. 세계화 속 문화교류 = 5 A. 문화의 일반적 이해 = 5 1. 문화의 의미 = 5 2. 세계화 속 문화의 변화 = 9 B. 문화교류와 문화정책 = 12 1. 문화교류의 성립과 전개 = 12 2. 문화교류정책 = 16 III. 문화정체성과 한국의 문화정체성 = 21 A. 문화정체성 = 21 1. 문화정체성의 이론적 배경 = 21 2. 문화정체성의 구성 = 26 B. 한국의 문화정체성 = 29 1. 배경으로서의 전통문화 = 29 2. 전통미술문화의 특징 = 35 IV. 문화교류에 나타난 한국의 문화정체성 = 47 A. 한국의 문화정체성을 알리기 위한 문화교류 = 47 B. 과제와 전망 = 56 V. 결론 = 60 참고문헌 = 63 Abstract = 6

Influence of Cu Composition on the Mechanical Properties and Microstructure of Ti-Al-Si-Cu-N thick films

Quinary component of 3μm thick Ti-Al-Si-Cu-N films were deposited onto WC-Co and Si wafer substrates by using an arc ion plating(AIP) system. In this study, the influence of copper(Cu) contents on the mechanical properties and microstructure of the films were investigated. The hardness of the films with 3.1 at.% Cu addition exhibited the hardness value of above 42 GPa due to the microstructural change as well as the solid-solution hardening. The instrumental analyses revealed that the deposited film with Cu content of 3.1 at.% was a nano-composites with nano-sized crystallites (5–7 nm in dia.) and a thin layer of amorphous Si3N4 phase

Enhanced Electrical and Optical Properties of IWO Thin Films by Post-deposition Electron Beam Irradiation

Transparent and conducting tungsten (W) doped indium oxide (IWO) thin films were deposited on the glass substrate by using RF magnetron sputtering and then electron irradiation was conducted to investigate the effect of electron irradiation on the optical and electrical properties of the films. The electron irradiated films showed three x-ray diffraction peaks of the In2O3 (222), (431) and (046) planes and the full width at half maximum values are decreased as increased electron irradiation energy. In the atomic force microscope analysis, the surface roughness of as deposited films was 1.70 nm, while the films electron irradiated at 700 eV, show a lower roughness of 1.28 nm. In this study, the figure of merit (FOM) of as deposited films is 2.07 × 10-3 Ω-1, while the films electron irradiated at 700 eV show the higher FOM value of 5.53 × 10-3 Ω-1. Thus, it is concluded that the post-deposition electron beam irradiation is the one of effective methods to enhance optical and electrical performance of IWO thin films

Influence of Substrate Bias Voltage on the Electrical and Optical Properties of IWO Thin Films

Transparent conductive tungsten (W) doped indium oxide (In2O3; IWO) films were deposited at different substrate bias voltage (-Vb) conditions at room temperature on glass substrates by radio frequency (RF) magnetron sputtering and the influence of the substrate bias voltage on the optical and electrical properties was investigated. As the substrate bias voltage increased to -350 Vb, the IWO films showed a lower resistivity of 2.06 × 10-4 Ωcm. The lowest resistivity observed for the film deposited at -350 Vb could be attributed to its higher mobility, of 31.8 cm2/Vs compared with that (6.2 cm2 /Vs) of the films deposited without a substrate bias voltage (0 Vb). The highest visible transmittance of 84.1 % was also observed for the films deposited at the -350 Vb condition. The X-ray diffraction observation indicated the IWO films deposited without substrate bias voltage were amorphous phase without any diffraction peaks, while the films deposited with bias voltage were polycrystalline with a low In2O3 (222) diffraction peak and relatively high intensity (431) and (046) diffraction peaks. From the observed visible transmittance and electrical properties, it is concluded that the opto-electrical performance of the polycrystalline IWO film deposited by RF magnetron sputtering can be enhanced with effective substrate bias voltage conditions

Effect of Ag interlayer on the optical and electrical properties of ZnO thin films

ZnO single layer (60 nm thick) and ZnO with Ag interlayer (ZnO/Ag/ZnO; ZAZ) films were deposited on the glass substrates by using radio frequency (RF) and direct current (DC) magnetron sputter to evaluate the effectiveness of Ag interlayer on the optical visible transmittance and the conductivity of the films. In the ZAZ films, the thickness of ZnO layers was kept at 30 nm, while the Ag thickness was varied as 5, 10, 15 and 20 nm. In X-ray diffraction (XRD) analysis, ZnO films show the (002) diffraction peak and ZAZ films also show the weak ZnO (002) peak and Ag (111) diffraction peak. As a thickness of Ag interlayer increased to 20nm, the grain size of the Ag films enlarged to 11.42 nm and the optical band gap also increased from 4.15 to 4.22 eV with carrier concentration increasing from 4.9 to 10.5×1021 cm-3. In figure of merit measurements, the ZAZ films with a 10 nm thick Ag interlayer showed the higher figure of merit of 4.0×10-3 Ω-1 than the ZnO single layer and another ZAZ films. From the experimental result, it is assumed that the Ag interlayer enhanced effectively the opto-electrical performance of the ZAZ films

Effects of Electron Irradiation on the Optoelectrical Performance of ZnO/Ag/ZnO Films

Transparent ZnO/Ag/ZnO tri-layered films were deposited on a glass substrate using radio frequency and direct current magnetron sputtering. The thicknesses of the ZnO and Ag films were maintained at 30 and 10 nm, respectively, to consider the effects of electron irradiation on the optoelectrical properties of the films. XRD spectra revealed that post-deposition electron irradiated films exhibited characteristic peaks of ZnO (002) and Ag (111), respectively. The observed grain sizes of ZnO (002) and Ag (111) increased to 7.1 and 8.4 nm, respectively, under an irradiation condition of 900 eV, and the surface roughness of the electron irradiated films at 900 eV was reduced to 1.29 nm. The as-deposited films showed a figure of merit, indicating the optoelectrical performance of the films, of 4.1×10-3 Ω-1, whereas the films electron irradiated at 900 eV showed a higher figure of merit of 1.1×10-2 Ω-1

The emissivity and opto-electrical properties of ZnO/Cu/ZnO thin films for the vehicle applications

Transparent conducting films having a three layered structure of ZnO/Cu/ZnO (ZCZ) were deposited onto the glass substrates by using RF and DC magnetron sputtering at room temperature. The emissivity and opto-electrical properties of the films were investigated with a varying thickness(5, 10, 15 nm) of the Cu interlayer. With increasing the Cu thickness to 15 nm, the films showed a enhanced electrical properties. Although ZnO 30/Cu 15/ZnO 30 nm film shows a lower resistivity of 5.2×10−5Ωcm, it’s visible transmittance is deteriorated by increased optical absorbtion of the films. In addition, X-ray diffraction patterns indicated that the insertion of Cu interlayer improve the grain size of ZnO films, which is favor for the electrical and optical properties of transparent conducting films. From the observed low emissivity of the films, it is concluded that the ZCZ thin films with optimal thickness of Cu interlayer can be applied effectively for the car’s window coating materials