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    A study on methods for redressing a legitimate right holder of a patent modified by a misappropriate applicant

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    ν•™μœ„λ…Όλ¬Έ(석사) -- μ„œμšΈλŒ€ν•™κ΅λŒ€ν•™μ› : λ²•κ³ΌλŒ€ν•™ 법학과(μ§€μ‹μž¬μ‚°μ „κ³΅), 2023. 8. 정상쑰.νŠΉν—ˆλ²• 상 무ꢌ리자의 λͺ¨μΈ μΆœμ›(ε†’θͺε‡Ίι‘˜)에 λŒ€ν•˜μ—¬ μ •λ‹Ήν•œ ꢌ리자의 λ³΄ν˜ΈλŠ” λ‹€κ°λ„λ‘œ 이루어진닀. μš°μ„ , νŠΉν—ˆλ²• 제33μ‘° 제1ν•­ λ³Έλ¬Έ 및 νŠΉν—ˆλ²• 제62μ‘° 제2ν˜Έμ— μ˜ν•˜μ—¬ 무ꢌ리자의 μΆœμ›μ€ 거절 μ‚¬μœ μ— ν•΄λ‹Ήν•˜λ©°, 섀사 무ꢌ리자의 μΆœμ›μ΄ λ“±λ‘λ˜μ—ˆλ”λΌλ„ νŠΉν—ˆλ²• 제33μ‘° 제1ν•­ λ³Έλ¬Έ 및 νŠΉν—ˆλ²• 제133μ‘° 제1ν•­ 제2ν˜Έμ— μ˜ν•˜μ—¬ μ†ŒκΈ‰μ  무효 μ‚¬μœ μ— ν•΄λ‹Ήν•œλ‹€. λ˜ν•œ, 무ꢌ리자의 μΆœμ›μ΄ νŠΉν—ˆλ²• 제33μ‘° 제1ν•­ 본문의 μœ„λ°˜μ„ 이유둜 ν•˜λŠ” νŠΉν—ˆλ²• 제62μ‘° 제2ν˜Έμ— μ˜ν•˜μ—¬ 거절 된 경우, 무ꢌ리자의 μΆœμ›μ΄ 거절된 ν›„ 30일 λ‚΄ 이루어진 μ •λ‹Ήν•œ ꢌ리자의 μΆœμ›μ€ 무ꢌ리자의 μΆœμ›μΌλ‘œ μ†ŒκΈ‰ κ°„μ£Όλœλ‹€. 무ꢌ리자의 등둝 νŠΉν—ˆμ— λŒ€ν•˜μ—¬ νŠΉν—ˆλ²• 제33μ‘° 제1ν•­ 본문의 μœ„λ°˜μ„ 이유둜 ν•˜λŠ” νŠΉν—ˆλ²• 제133μ‘° 제1ν•­ 제2ν˜Έμ— μ˜ν•œ νŠΉν—ˆ 무효 심결이 ν™•μ •λœ 경우, 무ꢌ리자의 νŠΉν—ˆμ— λŒ€ν•œ 무효 심결 ν™•μ • ν›„ 30일 λ‚΄ 이루어진 μ •λ‹Ήν•œ ꢌ리자의 μΆœμ›μ€ 무ꢌ리자의 μΆœμ›μΌλ‘œ μ†ŒκΈ‰ κ°„μ£Όλœλ‹€. κ·ΈλŸ¬λ‚˜, μ •λ‹Ήν•œ ꢌ리자λ₯Ό λ³΄ν˜Έν•˜κ³ μž ν•˜λŠ” νŠΉν—ˆλ²•μ˜ 취지와 달리, 싀무상 λ§Žμ€ 수의 λ¬΄κΆŒλ¦¬μžλŠ” λ‚΄λΆ€μž 정보에 μ˜ν•œ 정보 취득, λ˜λŠ” 기타 λ‹€μ–‘ν•œ λ°©λ²•μœΌλ‘œ 지득(ηŸ₯εΎ—)ν•œ μ •λ‹Ήν•œ ꢌ리자의 발λͺ…에 λŒ€ν•˜μ—¬ λ³€ν˜•μ„ κ°€ν•˜μ—¬ 동일성을 λ²—μ–΄λ‚œ λ²”μœ„μ˜ νŠΉν—ˆλ₯Ό μΆœμ›ν•˜λŠ” κ²½μš°κ°€ λ§Žλ‹€. ν”νžˆ μΌμ–΄λ‚˜λŠ” κ²½μš°λŠ” μ •λ‹Ήν•œ ꢌ리자의 발λͺ…에 λŒ€ν•˜μ—¬ ꡬ성 μš”μ†Œλ₯Ό λΆ€κ°€ν•˜κ±°λ‚˜ 일뢀 ꡬ성 μš”μ†Œλ₯Ό μΉ˜ν™˜ν•¨μœΌλ‘œμ¨ κ°œλŸ‰ 발λͺ…μœΌλ‘œ λ³€ν˜•λœ 발λͺ…μ˜ νŠΉν—ˆ μΆœμ›μ„ ν•˜λŠ” κ²½μš°μ΄λ‹€. λ³€ν˜•λœ 타인 νŠΉν—ˆμ— λŒ€ν•œ μ •λ‹Ήν•œ ꢌ리자의 μš°μ„ μ μΈ ꡬ제 방법은 타인 νŠΉν—ˆμ— λŒ€ν•œ 거절 λ˜λŠ” 무효λ₯Ό ν†΅ν•œ μ†ŒκΈ‰ μ†Œλ©Έμ΄ λ˜μ–΄μ•Ό ν•œλ‹€. ν˜„ν–‰ νŠΉν—ˆλ²• 상 μ •λ‹Ήν•œ ꢌ리자λ₯Ό λ°°μ œν•˜κ³  μΆœμ›λœ 타인 νŠΉν—ˆμ— λŒ€ν•œ 거절 λ˜λŠ” 무효의 κ·Όκ±° κ·œμ •μΈ νŠΉν—ˆλ²• 제33μ‘° 제1ν•­ λ³Έλ¬Έκ³Ό κ΄€λ ¨ν•˜μ—¬ νŠΉν—ˆμ‹¬νŒμ› 및 법원은 μ§€λ‚˜μΉ˜κ²Œ 동일성 μ—¬λΆ€μ˜ νŒλ‹¨μ— 함λͺ°λ˜κ³  있기 λ•Œλ¬Έμ— μ •λ‹Ήν•œ ꢌ리자의 보호λ₯Ό λ„μ™Έμ‹œν•˜κ³  있으며, λΆˆν•„μš”ν•œ λΆ„μŸμ„ μ•ΌκΈ°ν•˜κ³  μžˆλ‹€. 타인 νŠΉν—ˆλŠ” λŒ€κ°œ μ •λ‹Ήν•œ ꢌ리자의 발λͺ…μ—μ„œ 핡심적인 뢀뢄은 κ·ΈλŒ€λ‘œ λ³΄μ‘΄ν•˜λ©΄μ„œ 뢀차적인 사항에 λŒ€ν•˜μ—¬ ꡬ성상 λΆ€κ°€ λ˜λŠ” μΉ˜ν™˜μ„ ν•˜κΈ° λ•Œλ¬Έμ— μ‹¬νŒ λ˜λŠ” μ†Œμ†‘ μ ˆμ°¨μ—μ„œ 동일성 μ—¬λΆ€μ˜ νŒλ‹¨μ€ 핡심적인 뢀뢄은 관심이 μ—†κ³  뢀차적인 사항에 λŒ€ν•œ λ…Όμ˜κ°€ μ£Όμš”ν•œ λ…Όμ˜ λŒ€μƒμ΄ λœλ‹€. 더 λ‚˜μ•„κ°€, μ΄λŸ¬ν•œ 뢀차적인 사항에 λŒ€ν•˜μ—¬ μ‹ κ·œμ„± λ˜λŠ” 진보성이 μΈμ •λ˜λŠ” 경우, 타인 νŠΉν—ˆμ˜ 발λͺ… ν–‰μœ„μ— μ •λ‹Ήν•œ κΆŒλ¦¬μžκ°€ κ°œμž…λ˜μ—ˆλŠ”μ§€ μ—¬λΆ€λ₯Ό λ‹€νˆ΄ ν•„μš”λ„ 없이 μ‹¬νŒ λ˜λŠ” μ†Œμ†‘ μ ˆμ°¨κ°€ κ·ΈλŒ€λ‘œ μ’…κ²°λ˜κ³  μžˆλŠ” 것이 λͺ¨μΈ μΆœμ›κ³Ό κ΄€λ ¨ν•œ μ‹¬νŒ λ˜λŠ” μ†Œμ†‘ 절차의 ν˜„μ‹€μ΄λ‹€. 타인이 μ •λ‹Ήν•œ ꢌ리자의 발λͺ…μœΌλ‘œλΆ€ν„° 착상을 μ–»μ–΄μ„œ κΈ°μˆ μ„ νƒˆμ·¨ν•˜λŠ” λͺ©μ μ˜ νŠΉν—ˆλ₯Ό μΆœμ›ν•˜μ˜€μŒμ΄ 정황상 λ“œλŸ¬λ‚¨μ—λ„ λΆˆκ΅¬ν•˜κ³  ν˜„ν–‰ νŠΉν—ˆλ²• 상 λͺ¨μΈ μΆœμ› κ΄€λ ¨ κ·œμ •μΈ νŠΉν—ˆλ²• 제33μ‘° 제1ν•­ 본문이 동일성 μ—¬λΆ€μ˜ νŒλ‹¨μ— μ§€λ‚˜μΉ˜κ²Œ 함λͺ°λ˜μ–΄μ„œ 문제 해결을 ν•˜μ§€ λͺ»ν•˜κΈ° λ•Œλ¬Έμ— λ²•μ˜ νŒλ‹¨μ„ κ΅¬ν•˜λŠ” μ •λ‹Ήν•œ κΆŒλ¦¬μžμ™€ 이에 λŒ€ν•˜μ—¬ 결정을 λ‚΄λ¦¬λŠ” νŠΉν—ˆμ‹¬νŒμ› 및 법원은 νŠΉν—ˆλ²• 제33μ‘° 제1ν•­ 본문의 λŒ€μ•ˆμœΌλ‘œ 곡동 발λͺ…에 λŒ€ν•œ 곡동 μΆœμ› κ·œμ •μΈ νŠΉν—ˆλ²• 제44μ‘°λ₯Ό μƒλ‹Ήνžˆ μ΄μš©ν•˜κ³  μžˆλ‹€. κ·ΈλŸ¬λ‚˜, λ³€ν˜•λœ 타인 νŠΉν—ˆμ— λŒ€ν•œ ν•©μ˜κ°€ λ˜μ—ˆμ„ 리 μ—†λŠ” μ •λ‹Ήν•œ κΆŒλ¦¬μžμ™€ 타인 간에 μ‹€μ§ˆμ  μƒν˜Έ ν˜‘λ ₯을 μΈμ •ν•˜μ—¬ 곡동 μΆœμ› μœ„λ°˜μ΄λΌλŠ” 결둠을 μ΄λŒμ–΄λ‚΄λŠ” νŠΉν—ˆμ‹¬νŒμ› 및 λ²•μ›μ˜ λ…Όλ¦¬λŠ” λΆ„λͺ… λ¬Έμ œκ°€ μžˆλ‹€. νŠΉν—ˆλ²• 제44쑰에 κΈ°λ°˜ν•˜μ—¬ 타인 νŠΉν—ˆλ₯Ό 무효 μ‹œν‚¬ 경우, μ •λ‹Ήν•œ ꢌ리자 μž…μž₯μ—μ„œλŠ” μ •λ‹Ήν•œ ꢌ리자의 발λͺ…이 μ •λ‹Ήν•œ ꢌ리자의 λ™μ˜ 없이 μΆœμ›λ˜μ—ˆλ‹€λŠ” νŒλ‹¨μ„ λ°›μœΌλ©° λ˜ν•œ 타인 νŠΉν—ˆλ₯Ό λ¬΄νš¨ν™”ν•˜μ˜€κΈ° λ•Œλ¬Έμ— 1차적인 λͺ©ν‘œλŠ” λ‹¬μ„±ν•˜μ˜€μ§€λ§Œ, 타인 νŠΉν—ˆμ˜ 본질적 ꡬ성을 본인이 μ œμ‹œν•˜μ˜€μŒμ—λ„ λΆˆκ΅¬ν•˜κ³  뢀차적인 ꡬ성을 뢀가함에 λΆˆκ³Όν•œ 타인과 λ™λ“±ν•œ 자격으둜 κ· λ“±ν•œ μ§€λΆ„μ˜ 곡동 ꢌ리λ₯Ό μΆ”μ • λ°›μŒμ— λΆˆκ³Όν•˜κΈ° λ•Œλ¬Έμ— μ™„μ „ν•œ 문제 ν•΄κ²°κ³ΌλŠ” 거리가 μžˆλ‹€. λ˜ν•œ, 타인 νŠΉν—ˆμ— λŒ€ν•œ 기여도에 λ”°λ₯Έ 곡유 μ§€λΆ„μœ¨μ— λŒ€ν•˜μ—¬ μ•„λ¬΄λŸ° νŒλ‹¨μ„ 받지 λͺ»ν•˜μ˜€κΈ° λ•Œλ¬Έμ—, 2016λ…„ μ‹ μ„€λœ νŠΉν—ˆλ²• 제99쑰의2에 λ”°λ₯Έ 지뢄 이전 청ꡬλ₯Ό ν•  λ•Œμ—λ„ μ§€λΆ„μœ¨κ³Ό κ΄€λ ¨ν•˜μ—¬ μƒˆλ‘œμš΄ μŸμ†‘μ΄ 야기될 μˆ˜λ°–μ— μ—†λ‹€. μ΄λŸ¬ν•œ 문제의 근본적 원인은 μ• λ‹Ήμ΄ˆ λͺ¨μΈ μΆœμ›μž„μ—λ„ λΆˆκ΅¬ν•˜κ³  λͺ¨μΈ μΆœμ› κ·œμ •μ΄ 해결을 ν•˜μ§€ λͺ»ν•œ 것에 λŒ€ν•˜μ—¬ λŒ€μ•ˆμ  논리λ₯Ό λ§Œλ“€κΈ° μœ„ν•΄ λ³€ν˜•λœ 타인 νŠΉν—ˆμ— λŒ€ν•œ ν•©μ˜κ°€ λ˜μ—ˆμ„ 리 μ—†λŠ” μ •λ‹Ήν•œ κΆŒλ¦¬μžμ™€ 타인 간에 μ‹€μ§ˆμ  μƒν˜Έ ν˜‘λ ₯을 μΈμ •ν•˜μ—¬ 곡동 μΆœμ› μœ„λ°˜μœΌλ‘œ ν•΄κ²°ν•˜μ˜€κΈ° λ•Œλ¬Έμ΄λ‹€. 발λͺ…μž 슀슀둜 발λͺ…μ˜ μ™„μ„± ν›„ λͺ¨μΈ μΆœμ›μ΄ 생길 여지가 μžˆλŠ” 이벀트, 예λ₯Ό λ“€μ–΄, μ‹œμ œν’ˆ μ œμž‘ 의뒰 λ˜λŠ” 연ꡬ ν˜‘λ ₯ λ―ΈνŒ… 등을 μ•žλ‘κ³ λŠ” μž„μ‹œ μΆœμ› μ œλ„λ₯Ό 적극 ν™œμš©ν•˜μ—¬ 미리 νŠΉν—ˆ μΆœμ›μ„ ν•˜λŠ” λ¬Έν™”κ°€ μžλ¦¬μž‘λ„λ‘ ν•˜λŠ” 것이 μ€‘μš”ν•˜λ‹€. μž„μ‹œ μΆœμ› μ œλ„λŠ” λŒ€ν•œλ―Όκ΅­ νŠΉν—ˆμ²­μ΄ 2020λ…„ λ„μž…ν•œ μ œλ„μ΄λ©°, λΉ λ₯Έ νŠΉν—ˆ μΆœμ›μΌ 확보λ₯Ό μœ„ν•΄ 미ꡭ의 κ°€μΆœμ›(provisional application)κ³Ό 같이 ν˜•μ‹μ— μ œμ•½μ΄ μ—†λŠ” λͺ…μ„Έμ„œλ₯Ό μ œμΆœν•  수 μžˆλŠ” μ œλ„μ΄λ‹€. λ˜ν•œ, κ³΅κ°œλ˜μ§€ μ•Šμ€ μ„ μΆœμ›, 즉, μ •λ‹Ή ꢌ리자의 μΆœμ›μ— κΈ°λ°˜ν•˜μ—¬ ν›„μΆœμ›, 즉, 타인 νŠΉν—ˆμ˜ μΆœμ›μ„ 거절 λ˜λŠ” 등둝 ν›„ λ¬΄νš¨ν™”ν•¨κ³Ό κ΄€λ ¨ν•˜μ—¬ ν˜„ν–‰ νŠΉν—ˆλ²• 제29μ‘° 제3ν•­μ˜ 동일성 λ²”μœ„ νŒλ‹¨μ„ 진보성 λ²”μœ„ νŒλ‹¨μœΌλ‘œ ν™•μž₯ν•  ν•„μš”κ°€ μžˆλ‹€. 더 λ‚˜μ•„κ°€, νŠΉν—ˆλ²• 제29μ‘° 제1ν•­ 및 제2ν•­μ—μ„œ μ‹ κ·œμ„± 및 μ§„λ³΄μ„±μ˜ 인용발λͺ… μ§€μœ„μ— λŒ€ν•˜μ—¬ ν˜„ν–‰ νŠΉν—ˆλ²•μ˜ νŠΉν—ˆ μΆœμ› 전에 κ΅­λ‚΄ λ˜λŠ” κ΅­μ™Έμ—μ„œ 곡지(ε…¬ηŸ₯)λ˜μ—ˆκ±°λ‚˜ 곡연(ε…¬η„Ά)히 μ‹€μ‹œλœ 발λͺ… 등에 ν•œμ •ν•  것이 μ•„λ‹ˆλΌ, λ―Έκ΅­ νŠΉν—ˆλ²• 35 U.S.C. 102(a)(2) 및 이λ₯Ό μ€€μš©ν•˜λŠ” 35 U.S.C. 103와 μœ μ‚¬ν•˜κ²Œ, κ·Έ νŠΉν—ˆ μΆœμ›μΌ 전에 μΆœμ›λœ νŠΉν—ˆ μΆœμ›μ˜ μΆœμ›μ„œμ— 졜초둜 μ²¨λΆ€λœ λͺ…μ„Έμ„œ λ˜λŠ” 도면에 기재된 발λͺ…μœΌλ‘œ ν™•λŒ€ν•  ν•„μš”κ°€ μžˆλ‹€. λͺ¨μΈ μΆœμ›μ˜ νŠΉν—ˆλ²• 제33μ‘° 제1ν•­ 본문에 λŒ€ν•œ 거절 이유 및 무효 이유λ₯Ό κ·œμ •ν•˜κ³  μžˆλŠ” νŠΉν—ˆλ²• 제62μ‘° 제2호 및 제133μ‘° 제1ν•­ 제2ν˜Έμ— λŒ€ν•˜μ—¬ λ‹¨μˆœνžˆ νŠΉν—ˆλ₯Ό 받을 수 μžˆλŠ” ꢌ리λ₯Ό 가지지 μ•Šμ€ 경우둜 λ²”μœ„λ₯Ό 쒁게 ν•œμ •ν•  것이 μ•„λ‹ˆλΌ, 독일 νŠΉν—ˆλ²• 제21μ‘° 제1ν•­ 제3ν˜Έμ™€ μœ μ‚¬ν•˜κ²Œ, νŠΉν—ˆμ˜ 본질적 λ‚΄μš©μ΄ νƒ€μΈμ˜ 발λͺ…μ˜ μ„€λͺ…, 도면, λͺ¨ν˜•, 도ꡬ, μž₯μΉ˜λ‘œλΆ€ν„°, λ˜λŠ” 타인이 이λ₯Ό μ΄μš©ν•˜λŠ” λ°©λ²•μœΌλ‘œλΆ€ν„° ν•΄λ‹Ή νƒ€μΈμ˜ λ™μ˜ 없이 μ·¨λ“λ˜μ–΄ μžˆλŠ” κ²½μš°μ— λŒ€ν•˜μ—¬ 거절 이유 및 무효 이유둜 κ°œμ •ν•¨μœΌλ‘œμ¨, λͺ¨μΈ μΆœμ›μ— λŒ€ν•œ μ‹¬νŒ 및 μ†Œμ†‘ μ ˆμ°¨κ°€ νŠΉν—ˆμ˜ 본질적 λ‚΄μš©μ΄ 무엇인지 및 ν•΄λ‹Ή 본질적 λ‚΄μš©μ΄ ν•΄λ‹Ή νŠΉν—ˆμ˜ 발λͺ…μžλ‘œλΆ€ν„° λΉ„λ‘―λœ 것인지 λ˜λŠ” νƒ€μΈμœΌλ‘œλΆ€ν„° ν—ˆλ½ 없이 λΉ„λ‘―λœ 것인지에 λŒ€ν•œ μ‹¬λ¦¬λ‘œ μ§‘μ€‘λ˜μ–΄μ•Ό ν•œλ‹€. 타인 νŠΉν—ˆμ˜ λ³€ν˜•λœ λ²”μœ„κ°€ μƒλ‹Ήν•˜μ—¬ μ–΄μ©” 수 없이 νŠΉν—ˆλ²• 제44쑰의 곡동 발λͺ…에 κΈ°λ°˜ν•˜μ—¬ νŒλ‹¨μ„ ν•˜λŠ” 경우, νŒλ‘€μƒ 곡동 발λͺ…을 νŒλ‹¨ν•˜κΈ° μœ„ν•œ μš”κ±΄μœΌλ‘œμ„œ μ‹€μ§ˆμ  μƒν˜Έ ν˜‘λ ₯ μš”κ±΄κ³Ό κ΄€λ ¨ν•˜μ—¬, 타인 νŠΉν—ˆκ°€ 타인 νŠΉν—ˆμ˜ μΆœμ› λ‹Ήμ‹œ λΉ„λ°€μœ μ§€μ˜λ¬΄λ₯Ό 지지 μ•ŠλŠ” λΆˆνŠΉμ • λ‹€μˆ˜μ—κ²Œ κ³΅κ°œλ˜μ§€ μ•ŠλŠ” κΈ°μˆ μ— κΈ°λ°˜ν•˜μ—¬ κ°œλŸ‰ 발λͺ…을 μˆ˜ν–‰ν•œ κ²ƒμ΄μ—ˆλ‹€λ©΄ μ •λ‹Ήν•œ κΆŒλ¦¬μžλ‘œλΆ€ν„° λΉ„λ‘―λœ ꡬ성 μš”μ†Œμ— μ˜ν•œ 기술적 μ‚¬μƒμ˜ μ°½μž‘ν–‰μœ„μ— μ‹€μ§ˆμ μœΌλ‘œ κΈ°μ—¬κ°€ μΈμ •λ˜λŠ” κ²½μš°μ— ν•œν•˜μ—¬ 곡동 발λͺ…μœΌλ‘œ 인정함이 νƒ€λ‹Ήν•˜λ‹€. λ˜ν•œ, νŠΉν—ˆλ²• 제44쑰에 κΈ°λ°˜ν•˜λŠ” 무효 μ‚¬μœ λ₯Ό μ‹¬λ¦¬ν•˜λŠ” νŠΉν—ˆμ‹¬νŒμ› λ˜λŠ” λ²•μ›μ—μ„œλŠ” λ‹¨μˆœνžˆ 곡동 발λͺ… μ—¬λΆ€λ§Œμ„ νŒλ‹¨ν•  것이 μ•„λ‹ˆλ©°, νŠΉν—ˆλ²• 제44μ‘° μœ„λ°˜μ΄ μΈμ •λ˜λŠ” 경우 μΆœμ›μ‹œ 곡동 발λͺ…μž 간에 곡유 μ§€λΆ„μœ¨μ— κ΄€ν•œ 별도 약정이 μžˆμ„ 리 μ—†κΈ° λ•Œλ¬Έμ—, 각 발λͺ…μžμ˜ 기여도에 λ”°λ₯Έ κΈ°μ—¬μœ¨μ„ ν•¨κ»˜ νŒλ‹¨ν•¨μœΌλ‘œμ¨ μƒˆλ‘œμš΄ μŸμ†‘μ΄ λ°œμƒν•˜λŠ” 것을 사전에 μ°¨λ‹¨ν•˜λŠ” 것이 λ°”λžŒμ§ν•˜λ‹€. ν˜„ν–‰ νŠΉν—ˆλ²•μ˜ 맹점을 μ•…μš©ν•˜μ—¬ 동일 λ²”μœ„λ₯Ό λ²—μ–΄λ‚˜λŠ” λ³€ν˜•λ§Œμ„ κ°€ν•œ 타인 νŠΉν—ˆμ— λŒ€ν•œ μ •λ‹Ήν•œ ꢌ리자의 ꡬ제λ₯Ό λ„μ™Έμ‹œν•œλ‹€λ©΄ νŠΉν—ˆ μ œλ„λ₯Ό 톡해 발λͺ…을 μž₯λ €ν•˜κ³  μ‚°μ—… λ°œμ „μ„ 도λͺ¨ν•˜κΈ° μœ„ν•˜μ—¬ λΆ€μ—¬λ˜λŠ” 배타적 λ…μ κΆŒμ„ 보μž₯ν•˜κΈ° μœ„ν•œ κ΅­κ°€μ˜ ν–‰μ •λ ₯이 μ—‰λš±ν•œ 자의 λ³΄ν˜Έμ— μ‚¬μš©λ˜κ²Œ λœλ‹€. ν˜„ν–‰ νŠΉν—ˆλ²• 상 ν•œκ³„κ°€ 있기 λ•Œλ¬Έμ— μ΄λŸ¬ν•œ λ¬Έμ œκ°€ λ°œμƒν•˜κ³  있으며, μž…λ²•λ‘ μ  κ°œμ„ μ΄ λ’·λ°›μΉ¨λ˜μ–΄μ•Ό λ³€ν˜•λœ 타인 νŠΉν—ˆμ˜ μΆœμ›μ„ 막을 수 μžˆλ‹€. νŠΉν—ˆλ²•μ— κΈ°λ°˜ν•  λ•Œ μ •λ‹Ήν•œ ꢌ리자의 발λͺ…κ³Ό νŠΉν—ˆμ˜ 본질적 λ‚΄μš©μ„ κ³΅μœ ν•˜λ©΄μ„œ 일뢀 ꡬ성상 λ³€ν˜•μ΄ 된 μΆœμ›μœΌλ‘œλŠ” ꢌ리 νšλ“μ΄ λΆˆκ°€ν•˜λ‹€λŠ” νŒλ‹¨μ΄ λͺ¨μΈ μΆœμ›μžμ—κ²Œ 생길 수 μžˆμ–΄μ•Ό λ³€ν˜•λœ 타인 νŠΉν—ˆμ˜ μΆœμ›μ„ 근본적으둜 막을 수 μžˆμ„ 것이닀.Under the Patent Act, the protection of legitimate right holders regarding applications filed by non-right holders carried out in various ways. First of all, according to the main sentence of Article 33 (1) and Article 62 (2) of the Patent Act, applications by non-right holders are grounds for refusal. Even if an application by a non-righteous person is registered, it falls under the grounds for retroactive invalidation according to the main sentence of Article 33 (1) of the Patent Act and Article 133 (1) 2 of the Patent Act. In addition, if an application by an unentitled person is rejected pursuant to Article 62 (2) on the grounds of violation of Article 33 (1) of the Patent Act, an application filed by a legitimate right holder within 30 days after the application by an unentitled person is rejected considered retroactive to the filing date. 30 days after the trial decision to invalidate the patent of the non-righteous person becomes final and conclusive in the case of a patent invalidation trial decision pursuant to Article 133 (1) 2 on the grounds of violation of the main sentence of Article 33 (1) of the Patent Act with respect to the registered patent of the non-righteous person Applications filed by the rightful holder within the period shall be considered retroactive to the filing date of the non-right holder. However, contrary to the purpose of the Patent Act to protect legitimate right holders, in practice, many non-right holders often modify the inventions of legitimate right holders, which they have acquired through internal information or other means, to file patents that go beyond the scope of identity. Commonly occurring cases include filing a patent application for an improved invention by adding components or substituting some components for the invention of a legitimate right holder. The primary remedy for the right holder of a modified patent of another person shall be retroactive lapse through rejection or invalidation of the patent of another person. Regarding the main sentence of Article 33 (1) of the Patent Act, which is the basis for refusal or invalidation of patents filed by others excluding legitimate right holders under the current Patent Act, because the Intellectual Property Trial and Appeal Board and the courts are too preoccupied with the judgment of identity, they neglect the protection of legitimate right holders and cause unnecessary disputes. Since other patents usually preserve the essential parts of the invention of the legitimate right holder and add or substitute sub-items, the determination of identity in the trial or litigation process is not interested in the essential parts, but on the sub-items. discussion is the main subject of discussion. Furthermore, if novelty or inventive step is recognized for these secondary matters, the reality of the trial or litigation process related to applications filed by non-right holders is that the trial or litigation process ends as it is without the need to dispute whether the legitimate right holder was involved in the invention of another patent. Despite the circumstances revealing that another person has applied for a patent for the purpose of stealing technology by getting an idea from the invention of a legitimate right holder, since the text of Article 33, Paragraph 1 of the Patent Act, which is a provision related to applications filed by non-right holders under the current Patent Act, is too preoccupied with the determination of identity, it cannot solve the problem. As an alternative to the text of Article 33(1) of the Patent Act, the legitimate right holder seeking a judgment of the law and the Intellectual Property Trial and Appeal Board, which makes a decision on it, are making considerable use of Article 44 of the Patent Act, which is a provision related to joint application. However, the logic of the Intellectual Property Trial and Appeal Board and the courts, which recognizes substantial mutual cooperation between a legitimate right holder and another person who cannot have reached an agreement on a modified patent of another person, and draws a conclusion that it is a violation of a joint application, is clearly problematic. In the case of invalidating another person's patent based on Article 44 of the Patent Act, from the viewpoint of the legitimate right holder, it is determined that the invention of the legitimate right holder was applied without the consent of the legitimate right holder, and the primary goal was achieved because the patent of another person was invalidated. Even though the essential composition is presented by the person himself, it is far from a complete solution to the problem because it is merely a presumption of joint rights of equal shares with others on an equal basis, which is merely adding a secondary composition. In addition, since no judgment has been made on the share ratio according to the contribution to others' patents, a new litigation in relation to the share inevitably arises even when a claim for share transfer is made in accordance with Article 99-2 of the Patent Act newly established in 2016. The fundamental cause of this problem is that, despite the fact that the application was initially grouped, it was resolved through a joint application violation that the regulations of the grouping applications failed to resolve. It is important for inventors to actively utilize the provisional application system to establish a culture of filing patent applications in advance ahead of an event in which an application may be filed after the completion of the invention, for example, a request for prototype production or a meeting for research collaboration. do. The provisional application system is a system introduced by the Korean Intellectual Property Office in 2020, and is a system that allows the applicant to submit specifications without format restrictions, such as provisional applications in the United States, in order to secure a fast patent filing date. In addition, in relation to a later application based on an earlier unpublished application, that is, an application of a legitimate right holder, that is, an application for another person's patent is rejected or invalidated after registration, the scope of identity of Article 29, Paragraph 3 of the current Patent Act is determined in accordance with the scope of inventive step. need to be expanded to Furthermore, in Article 29, Paragraphs 1 and 2 of the Patent Act, the status of cited inventions of novelty and inventive step cannot be limited to inventions that were publicly known or publicly practiced in Korea or abroad before a patent application under the current Patent Act. Rather, U.S. Patent Act 35 U.S.C. 102(a)(2) and 35 U.S.C. Similar to 103, it is necessary to extend to the invention described in the specification or drawings originally attached to the filing of a patent application filed prior to the filing date of that patent. Regarding Article 62(2) and Article 133(1)(2) of the Patent Act, which stipulate the grounds for rejection and invalidation of the main sentence of Article 33(1) of the Patent Act for applications filed by non-right holders, rather than simply limiting the scope narrowly to the case of not having the right to obtain a patent, similar to Article 21(1)(3) of the German Patent Act, by revising the reasons for refusal and invalidity in the case where the essential content of the patent has been obtained without the consent of another person from the description, drawing, model, tool, or device of another person's invention, or from the method by which another person uses it, trial and litigation procedures for applications filed by non-right holders should focus on examining what the essential content of the patent is and whether the essential content originated from the inventor of the patent or from another person without permission. If the scope of transformation of another person's patent is substantial and inevitably makes a judgment based on the joint invention of Article 44 of the Patent Act, regarding the requirement for substantive mutual cooperation as a requirement for determining co-invention in judicial precedent, if someone else's patent is an improved invention based on a technology that is not disclosed to an unspecified number of people who do not have a confidentiality obligation at the time of application for the patent, substantial contribution to the creation of a technical idea by a component derived from a legitimate right holder is recognized. If so, it is reasonable to recognize it as a joint invention. In addition, the Intellectual Property Trial and Appeal Board or the court, which examines the grounds for invalidation based on Article 44 of the Patent Act, does not simply judge whether or not there is a joint invention, if a violation of Article 44 of the Patent Act is recognized, since there is no separate agreement regarding the share of shares between co-inventors at the time of application, it is desirable to block the occurrence of new litigation in advance by determining the contribution rate according to the contribution of each inventor together. If the remedy of the legitimate right holder for the patent of another person who exploited the blind spot of the current patent law and made only modifications outside the same scope is neglected, the administrative power of the state to guarantee the exclusive monopoly granted to promote invention and promote industrial development through the patent system is used to protect the wrong person. This problem arises because there are limitations in the current patent law, and the application of modified patents by others can be prevented only when legislative improvement is supported. Based on the patent law, a misappropriate applicant should be able to judge that it is impossible to obtain the right with an application that is partially transformed while sharing the essential content of the patent with the invention of the legitimate right holder, it will be possible to fundamentally block the application of patents modified by others.제 1 μž₯ μ„œ λ‘  1 제 1 절 μ—°κ΅¬μ˜ λͺ©μ  1 제 2 절 μ—°κ΅¬μ˜ λ‚΄μš© 5 제 2 μž₯ λͺ¨μΈ μΆœμ›μ˜ λ²”μœ„μ™€ λ³€ν˜•λœ 타인 νŠΉν—ˆμ˜ 문제점 6 제 1 절 λ³€ν˜•λœ 타인 νŠΉν—ˆμ˜ μ˜ˆμ‹œμ™€ 문제점 6 1. λͺ¨μΈλŒ€μƒλ°œλͺ…μœΌλ‘œλΆ€ν„° λ³€ν˜•λœ 타인 νŠΉν—ˆμ˜ μ˜ˆμ‹œ 6 κ°€. 첫번째 μ˜ˆμ‹œμ  μΌ€μ΄μŠ€: 등둝 νŠΉν—ˆ 제1389326호 6 λ‚˜. λ‘λ²ˆμ§Έ μ˜ˆμ‹œμ  μΌ€μ΄μŠ€: 등둝 νŠΉν—ˆ 제1389326호 9 λ‹€. μ„Έλ²ˆμ§Έ μ˜ˆμ‹œμ  μΌ€μ΄μŠ€: λ―Έκ΅­ 등둝 νŠΉν—ˆ 제4,535,773호 11 라. λ„€λ²ˆμ§Έ μ˜ˆμ‹œμ  μΌ€μ΄μŠ€: 등둝 νŠΉν—ˆ 제1389326호 16 2. λ³€ν˜•λœ 타인 νŠΉν—ˆμ˜ 문제점 19 제 2 절 λ³€ν˜•λœ 타인 νŠΉν—ˆ μΆœμ›μ˜ λͺ¨μΈ μΆœμ› ν•΄λ‹Ή μ—¬λΆ€ 26 1. λͺ¨μΈ μΆœμ›μ˜ 의의 26 2. λͺ¨μΈ μΆœμ›μ˜ μš”κ±΄ 27 κ°€. λŒ€ν•œλ―Όκ΅­ 27 λ‚˜. λ―Έκ΅­ 29 λ‹€. 일본 32 라. μ†Œκ²° 34 3. λ³€ν˜•λœ 타인 μΆœμ›μ˜ λͺ¨μΈ μΆœμ› μ—¬λΆ€ 35 κ°€. 동일성 νŒλ‹¨ κΈ°μ€€ 35 λ‚˜. 동일성에 λ”°λ₯Έ λͺ¨μΈ μΆœμ› μ—¬λΆ€ 36 제 3 절 λ³€ν˜•λœ 타인 νŠΉν—ˆ μΆœμ›μ˜ 곡동 μΆœμ› μœ„λ°˜ μ—¬λΆ€ 39 1. 곡동 발λͺ…μ˜ 의의 39 2. 곡동 발λͺ…μ˜ μš”κ±΄ 39 κ°€. λŒ€ν•œλ―Όκ΅­ 39 λ‚˜. λ―Έκ΅­ 44 λ‹€. 일본 50 라. μ†Œκ²° 52 3. ꡬ성 μš”μ†Œμ˜ λΆ€κ°€ λ˜λŠ” μΉ˜ν™˜μœΌλ‘œ λ³€ν˜•λœ 타인 νŠΉν—ˆμ˜ 곡동 발λͺ… μ—¬λΆ€ 53 κ°€. λΆ€κ°€ λ˜λŠ” μΉ˜ν™˜μœΌλ‘œ λ³€ν˜•λœ ꡬ성 μš”μ†Œμ˜ νŠΉν—ˆμ„±μ— κΈ°λ°˜ν•œ 곡동 발λͺ… μ—¬λΆ€ 53 (1) λΆ€κ°€ λ˜λŠ” μΉ˜ν™˜μœΌλ‘œ λ³€ν˜•λœ ꡬ성 μš”μ†Œμ— μ‹ κ·œμ„±μ΄ μ—†λŠ” 경우 53 (2) λΆ€κ°€ λ˜λŠ” μΉ˜ν™˜μœΌλ‘œ λ³€ν˜•λœ ꡬ성 μš”μ†Œμ— μ‹ κ·œμ„±μ΄ μžˆμœΌλ‚˜ 진보성이 μ—†λŠ” 경우 55 (3) λΆ€κ°€ λ˜λŠ” μΉ˜ν™˜μœΌλ‘œ λ³€ν˜•λœ ꡬ성 μš”μ†Œμ— 진보성이 μžˆλŠ” 경우 58 λ‚˜. μ‹€μ§ˆμ  μƒν˜Έ ν˜‘λ ₯에 주관적 μƒν˜Έ ν˜‘λ ₯이 λ°˜λ“œμ‹œ ν•„μš”ν•œμ§€ μ—¬λΆ€ 60 (1) 주관적 μƒν˜Έ ν˜‘λ ₯이 ν•„μš”ν•˜λ‹€λŠ” 견해 60 (2) 주관적 μƒν˜Έ ν˜‘λ ₯이 ν•„μš”ν•˜μ§€ μ•Šλ‹€λŠ” 견해 63 (3) μ†Œκ²° 68 λ‹€. 곡동 발λͺ…μž κ°„ μ§€λΆ„μœ¨ μ‚°μ • 방법 70 (1) 별도 μ•½μ • μ—†λŠ” 경우 발λͺ…μž 기재의 μΆ”μ •λ ₯ 기반 κ· λ“± μ§€λΆ„μœΌλ‘œ μΆ”μ • 70 (2) 발λͺ…μž 기재의 μΆ”μ •λ ₯ 기반 곡동 발λͺ…μž μΆ”μ • 71 (3) 발λͺ…μž 기재의 μΆ”μ •λ ₯을 μΈμ •ν•˜μ§€ μ•Šκ³  곡동 발λͺ…μž νŒλ‹¨ 73 (4) 착상 및 ꡬ체화 λ‹¨κ³„μ˜ κ³΅ν—Œμ„ 기반으둜 μ§€λΆ„μœ¨ μ‚°μ • 74 (5) λ³€ν˜•λœ 타인 νŠΉν—ˆ μΆœμ›μ— λŒ€ν•œ 곡동 발λͺ… μ§€λΆ„μœ¨ μ‚°μ • 76 제 3 μž₯ μ •λ‹Ή ꢌ리자의 ꡬ제 λ°©μ•ˆ 80 제 1 절 λ³€ν˜•λœ 타인 νŠΉν—ˆμ— λŒ€ν•œ 거절 λ˜λŠ” 무효 80 1. λŒ€ν•œλ―Όκ΅­ 80 2. λ―Έκ΅­ 83 3. 일본 85 4. μ†Œκ²° 87 제 2 절 λ³€ν˜•λœ 타인 νŠΉν—ˆμ— λŒ€ν•œ 곡유 기반 지뢄 λΆ„ν•  청ꡬ 88 1. λŒ€ν•œλ―Όκ΅­ 88 2. λ―Έκ΅­ 92 3. 일본 92 4. μ†Œκ²° 94 제 3 절 λ³€ν˜•λœ 타인 νŠΉν—ˆμ— λŒ€ν•œ μ •λ‹Ήν•œ ꢌ리자의 μΆœμ›μΌ μ†ŒκΈ‰ 94 1. λŒ€ν•œλ―Όκ΅­ 94 2. λ―Έκ΅­ 95 3. 일본 97 4. μ†Œκ²° 98 제 4 μž₯ μž…λ²•λ‘ μ  κ°œμ„  λ°©μ•ˆ 연ꡬ 100 제 1 절 μ„œλ‘  100 제 2 절 λ³€ν˜•λœ 타인 νŠΉν—ˆμ— λŒ€ν•œ 거절 λ˜λŠ” 무효 κ΄€λ ¨ κ°œμ„ μ•ˆ 100 1. μ •λ‹Ήν•œ ꢌ리자의 μ„ μΆœμ›μ„ μ „μ œλ‘œ νŠΉν—ˆλ²• 제29쑰에 λŒ€ν•œ κ°œμ„ μ•ˆ 102 2. νŠΉν—ˆλ²• 제33μ‘° 제1ν•­ λ³Έλ¬Έ κ΄€λ ¨ 거절 λ˜λŠ” 무효 μ΄μœ μ— λŒ€ν•œ κ°œμ„ μ•ˆ 105 제 3 절 λ³€ν˜•λœ 타인 νŠΉν—ˆμ— λŒ€ν•œ 곡유 기반 지뢄 λΆ„ν•  청ꡬ κ΄€λ ¨ κ°œμ„ μ•ˆ 106 제 4 절 λ³€ν˜•λœ 타인 νŠΉν—ˆ μΆœμ›μ— λŒ€ν•œ μ •λ‹Ή ꢌ리자의 μΆœμ›μΌ μ†ŒκΈ‰ κ΄€λ ¨ κ°œμ„ μ•ˆ 112 제 5 μž₯ κ²°λ‘  114 μ°Έκ³ λ¬Έν—Œ 119 Abstract 124석

    Empirical study on the location patterns of retail trade adjacent to large-scale discount store

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    ν•™μœ„λ…Όλ¬Έ (석사)-- μ„œμšΈλŒ€ν•™κ΅ λŒ€ν•™μ› : κ±΄μ„€ν™˜κ²½κ³΅ν•™λΆ€, 2011.2. 정창무.Maste

    Best Learnerμ—κ²Œ λ“£λŠ” ν•™μŠ΅ μ „λž΅ λ…Έν•˜μš° 2

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    A 클래슀 μ˜€ν”ΌμŠ€λΉŒλ”© μ‹œμž₯의 κΈ€λ‘œλ²Œ 경쟁λ ₯ : 닀이아λͺ¬λ“œ λͺ¨λΈμ„ μ΄μš©ν•œ μ„œμšΈ, 도쿄, 홍콩, 싱가포λ₯΄ μ‹œμž₯의 비ꡐ뢄석

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    Polarization Switching Kinetics in Ferroelastic BiFeO3 Films

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    Multiferroic BiFeO3 (BFO) has recently attracted plenty of interest due to the coexistence of robust room-temperature ferroelectricity and antiferromagnetism. Understanding the effect of various disorders (e.g., strain and defects) is of great significance for device application of BFO thin films. In BFO, which has strong coupling between ferroelectic polarization and ferroelastic domain, the crystallographic structure is susceptible to strain. At the ferroelastic boundaries accompanying structural distortion, the presence of impurity phase or misfit dislocation has been reported. Additionally, point defects are easily created during the film deposition because of the volatility of Bi ion. There have been recent reports on how such disorders affect intriguing static material properties in BFO films. But, the detailed investigation of dynamic properties has been rare. The control of domain walls in ferroic materials is currently an important issue for the potential application of domain wall motion to microelectronic devices. It has been recently proposed that the controlled movement of domain walls in magnetic nanowires can be utilized for nonvolatile racetrack memory of high performance. In addition, domain wall-induced conductivity modulation in a BFO thin film was reported, providing a basis for new device concepts using the ferroelectric domain walls. These domain wall devices require precise control of motion as well as location of the domain walls. We report on the directional growth of ferroelectric domains in a multiferroic BFO thin film, which was epitaxially grown on a vicinal (001) SrTiO3 (STO) substrate. A detailed structural analysis of the film shows that a strain gradient, which can cause a symmetry breaking in ferroelectric double-well potential, causes ferroelectric domains to grow with preferred directionality under an electric field. Our results reveal the possibility of controlling the direction of domain growth using an electric field by imposing constraints on ferroelectric films, such as a strain gradient. In epitaxial BFO(111) capacitors with disordered top and well-ordered bottom interfaces, we report intriguing switching-polarity dependence in the polarization reversal. Ferroelectric coercive voltages and polarization switching behaviors in BFO(111) capacitors are quite different for the polarity of applied electric bias. Piezoresponse force microscopy revealed that the ferroelectric domain evolution is governed either by nucleation or by domain wall motion depending on the direction of external electric field. The polarity dependence of ferroelectric switching kinetics is attributed to asymmetric local internal fields near the film/electrode interfaces. It is probably due to differences in various disorders by structural relaxation such as defects, elastic strain, and surface roughness. In Bi-deficient BFO films, we show a reversible change of ferroelectric hysteresis under voltage stress. Surprisingly, for negative voltage stress, pristine hysteresis loops were shrunk with the decrease of remnant polarization and coercive voltage. For positive recovery bias, the shrunk hysteresis loops in stressed states were recovered to the original those. Upward polarization switching under negative voltage stress is explained by defect-mediated domain nucleation and thermally-activated domain wall motion. It is highly likely that pinning of the switched upward domains is attributed to a charge trapping process of injected carrier at domain walls, resulting in hysteresis contraction. The charge-trapped domain walls might be responsible for the transient behavior of current density. The better understanding of disorder effects in ferroelectric domain switching dynamics plays a crucial role for device application of BFO thin films. Keywords: thin film, ferroelectric, ferroelastic, BiFeO3, polarization switching kinetics, domain wall, strain, defect, hysteresis. Student number: 2006-20324졜근 BiFeO3 (BFO)λŠ” μƒμ˜¨ κ°•μœ μ „μ„±κ³Ό λ°˜κ°•μžμ„±μ˜ 곡쑴으둜 인해 λ§Žμ€ 관심을 λ°›κ³  μžˆλŠ” 닀강체 λ¬Όμ§ˆμ΄λ‹€. κ·ΈλŸ¬ν•œ BFOμ—μ„œ 응λ ₯μ΄λ‚˜ 결함과 같은 λ¬΄μ§ˆμ„œ μš”μ†Œλ“€μ΄ μ–΄λ– ν•œ 영ν–₯을 λΌμΉ˜λŠ” 지λ₯Ό μ΄ν•΄ν•˜λŠ” 것은 BFO λ°•λ§‰μ˜ μ†Œμž μ‘μš©μ„ μœ„ν•΄ 맀우 μ€‘μš”ν•˜λ‹€. μ‹€μ œλ‘œ, BFO 내에 κ°•μœ μ „μ„± λΆ„κ·Ήκ³Ό 강탄성 ꡬ쑰 사이에 κ°•ν•œ κ²°ν•©μœΌλ‘œ 인해 κ·Έ κ²°μ • κ΅¬μ‘°λŠ” 응λ ₯에 맀우 λ―Όκ°ν•˜λ‹€. 이미 ꡬ쑰적 λΉ„λš€μ–΄μ§μ„ λ™λ°˜ν•˜λŠ” 강탄성 κ²½κ³„μ—μ„œ 뢈순물 μƒμ΄λ‚˜ 격자 μ–΄κΈ‹λ‚¨μ˜ μ‘΄μž¬κ°€ λ³΄κ³ λ˜μ—ˆλ‹€. λ˜ν•œ, BFO 박막 증착 μ€‘μ—λŠ” λΉ„μŠ€λ¬΄μŠ€ 이온의 νœ˜λ°œμ„± λ•Œλ¬Έμ— 점 결함듀이 μ‰½κ²Œ μƒμ„±λœλ‹€. 졜근, μ΄λŸ¬ν•œ λ¬΄μ§ˆμ„œ μš”μ†Œλ“€μ΄ BFO 박막 λ‚΄μ˜ 정적인 물성에 μ–΄λ–»κ²Œ 영ν–₯을 λΌμΉ˜λŠ” 지에 λŒ€ν•œ λ§Žμ€ 보고듀이 μžˆμ–΄μ™”λ‹€. ν•˜μ§€λ§Œ, 동적인 νŠΉμ„±μ— λŒ€ν•œ μƒμ„Έν•œ μ‘°μ‚¬λŠ” 맀우 λ“œλ¬Όμ—ˆλ‹€. κ°•μœ μ „ λ˜λŠ” κ°•μžμ„± λ¬Όμ§ˆλ“€μ—μ„œ ꡬ역벽을 μ‘°μ ˆν•˜λŠ” 것은 ꡬ역벽 μš΄λ™μ„ μ΄μš©ν•œ μƒˆλ‘œμš΄ 마이크둜 μ†Œμž κ°œλ°œμ„ μœ„ν•΄ 맀우 μ€‘μš”ν•œ μ΄μŠˆμ΄λ‹€. 졜근, μžμ„±μ²΄ λ‚˜λ…Έμ„ μ—μ„œ ꡬ역벽 μš΄λ™μ„ μ‘°μ ˆν•¨μœΌλ‘œμ¨ μƒˆλ‘œμš΄ ν˜•νƒœμ˜ κ³ μ„±λŠ₯ λΉ„νœ˜λ°œμ„± 자ꡬ벽 λ©”λͺ¨λ¦¬ (즉, racetrack λ©”λͺ¨λ¦¬)κ°€ μ œμ•ˆλ˜μ—ˆλ‹€. λ˜ν•œ, BFO λ°•λ§‰μ—μ„œλŠ” ν₯미둜운 ꡬ역벽 전도성이 λ°œκ²¬λ˜μ—ˆλ‹€. κ·ΈλŸ¬ν•œ ꡬ역벽 전도성은 κ°•μœ μ „ ꡬ역벽을 μ΄μš©ν•œ μ‹ κ°œλ… μ†Œμž κ°œλ°œμ„ μœ„ν•œ κΈ°μ΄ˆκ°€ λ˜μ—ˆλ‹€. μ΄λŸ¬ν•œ ꡬ역벽 μ†Œμžμ˜ κ°œλ°œμ„ μœ„ν•΄μ„œλŠ” κ΅¬μ—­λ²½μ˜ μš΄λ™ 뿐만 μ•„λ‹ˆλΌ μœ„μΉ˜κΉŒμ§€ μ •ν™•νžˆ μ‘°μ ˆν•˜λŠ” 것이 맀우 μ€‘μš”ν•˜λ‹€. μ—¬κΈ°μ„œ, μš°λ¦¬λŠ” 경사진 SrTiO3 (STO) 기판 μœ„μ— 증착된 BFO λ°•λ§‰μ—μ„œ κ°•μœ μ „ ꡬ역이 μ–΄λ–€ λ°©ν–₯성을 가지고 μ„±μž₯ν•˜λŠ” 것을 λ³΄κ³ ν•œλ‹€. μžμ„Έν•œ ꡬ쑰적인 뢄석을 톡해 μš°λ¦¬λŠ” BFO 박막 λ‚΄ 응λ ₯ gradientκ°€ μ‘΄μž¬ν•˜λŠ” 것을 λ°œκ²¬ν•˜μ˜€λ‹€. κ·ΈλŸ¬ν•œ 응λ ₯ gradientλŠ” κ°•μœ μ „ 쌍우물 ν¬ν…μ…œμ˜ λŒ€μΉ­μ„±μ„ 깨뜨리고, κ°•μœ μ „ ꡬ역듀이 μ™ΈλΆ€ μ „κΈ°μž₯ ν•˜μ—μ„œ νŠΉμ • λ°©ν–₯을 μ„ ν˜Έν•˜λ©΄μ„œ μ„±μž₯ν•˜λ„λ‘ ν•œλ‹€. 이 κ²°κ³ΌλŠ” κ°•μœ μ „μ²΄ λ°•λ§‰μ—μ„œ 응λ ₯ gradientλ₯Ό ν†΅ν•œ ꡬ역 μ„±μž₯의 λ°©ν–₯성을 μ „κΈ°μ μœΌλ‘œ 쑰절 κ°€λŠ₯ν•˜λ‹€λŠ” 것을 보여쀀닀. λ¬΄μ§ˆμ„œν•œ 상뢀 계면과 λ¬΄μ§ˆμ„œν•˜μ§€ μ•Šμ€ ν•˜λΆ€ 계면을 가진 μΌœμŒ“μ€ BFO(111) μΊνŒ¨μ‹œν„°μ—μ„œ μš°λ¦¬λŠ” κ°•μœ μ „ λΆ„κ·Ή λ°˜μ „μ΄ κ·Ήμ„± μ˜μ‘΄μ„±μ„ λ³΄κ³ ν•œλ‹€. μ—¬κΈ°μ—μ„œλŠ”, κ°•μœ μ „ coercivity와 λΆ„κ·Ή λ°˜μ „μ΄ κ°€ν•΄μ€€ λ°”μ΄μ–΄μŠ€μ˜ 극성에 따라 맀우 λ‹€λ₯΄λ‹€. 압전감응 힘 ν˜„λ―Έκ²½μ€ κ°•μœ μ „ ꡬ역 μ„±μž₯이 κ°€ν•΄μ€€ μ „κΈ°μž₯의 λ°©ν–₯에 따라 ꡬ역 ν•΅ ν˜•μ„± λ˜λŠ” ꡬ역벽 μš΄λ™μ— μ˜ν•΄ μ§€λ°°λ˜λŠ” 것을 λ³΄μ—¬μ£Όμ—ˆλ‹€. μ΄λŸ¬ν•œ κ°•μœ μ „ ꡬ역 λ°˜μ „μ˜ κ·Ήμ„± μ˜μ‘΄μ„±μ€ 박막/μ „κ·Ή κ³„λ©΄μ—μ„œμ˜ λ‚΄λΆ€ κ΅­μ†Œ μ „κΈ°μž₯의 λΉ„λŒ€μΉ­μ  뢄포에 μ˜ν•΄μ„œ κΈ°μΈν•œλ‹€. ꡬ쑰적 풀림에 μ˜ν•œ λ¬΄μ§ˆμ„œ μš”μ†Œ (결함, 응λ ₯, ν‘œλ©΄ κ±°μΉ κΈ°)μ—μ„œμ˜ 차이가 μ΄λŸ¬ν•œ λΉ„λŒ€μΉ­ λ‚΄λΆ€ κ΅­μ†Œ μ „κΈ°μž₯을 μ•ΌκΈ°ν–ˆμ„ 것 κ°™λ‹€. λΉ„μŠ€λ¬΄μŠ€ 이온이 λΆˆμΆ©λΆ„ν•œ BFO 박막에 λŒ€ν•΄, μš°λ¦¬λŠ” μ™ΈλΆ€ μ „μ•• stress에 μ˜ν•΄μ„œ κ°•μœ μ „μ²΄ 이λ ₯곑선이 κ°€μ—­μ μœΌλ‘œ λ³€ν™”ν•˜λŠ” 것을 보여쀀닀. λ†€λžκ²Œλ„, 음극 μ „μ•• stress에 λŒ€ν•΄μ„œ 이λ ₯곑선은 μžλ°œλΆ„κ·Ήκ³Ό coercive μ „μ••μ˜ κ°μ†Œλ₯Ό λ™λ°˜ν•˜λ©΄μ„œ μ›λž˜ μƒνƒœλ‘œλΆ€ν„° μˆ˜μΆ•λ˜μ—ˆλ‹€. ν•œνŽΈ, μ–‘κ·Ή μ „μ•• stress에 λŒ€ν•΄μ„œ κ·Έ μˆ˜μΆ•λœ 이λ ₯곑선은 μ›λž˜ μƒνƒœλ‘œ νšŒλ³΅λ˜μ—ˆλ‹€. 음극 μ „μ•• stress ν•˜μ—μ„œμ˜ μœ„μͺ½ λΆ„κ·Ή μƒνƒœλ‘œμ˜ λ°˜μ „μ€ 결함이 맀개된 ꡬ역 ν•΅ ν˜•μ„±κ³Ό μ—΄μ μœΌλ‘œ ν™œμ„±ν™”λœ ꡬ역벽 μš΄λ™μ— μ˜ν•΄μ„œ μ„€λͺ…될 수 μžˆλ‹€. λ°˜μ „λœ μœ„μͺ½ κ΅¬μ—­μ˜ pinning ν˜„μƒμ€ μ™ΈλΆ€μ—μ„œ μ£Όμž…λœ μ „ν•˜μ˜ κ΅¬μ—­λ²½μ—μ„œμ˜ trapping κ³Όμ •μœΌλ‘œ 인해 μΌμ–΄λ‚˜λŠ” 것 κ°™λ‹€. 그리고, μ΄λŸ¬ν•œ pinning ν˜„μƒμ΄ 이λ ₯κ³‘μ„ μ˜ μˆ˜μΆ•μ„ μ•ΌκΈ°ν•œλ‹€. κ·ΈλŸ¬ν•œ μ „ν•˜κ°€ trap된 ꡬ역벽이 μ „λ₯˜λ°€λ„μ—μ„œμ˜ μΌμ‹œμ μΈ 변화에 μ±…μž„μ΄ μžˆλŠ” 것 κ°™λ‹€. κ°•μœ μ „ ꡬ역 λ°˜μ „ λ™μ—­ν•™μ—μ„œμ˜ λ¬΄μ§ˆμ„œ νš¨κ³Όμ— λŒ€ν•œ κ·ΈλŸ¬ν•œ 더 λ‚˜μ€ μ΄ν•΄λŠ” BFO λ°•λ§‰μ˜ μ†Œμž μ‘μš©μ— μžˆμ–΄μ„œ 결정적인 역할을 ν•  것이닀. μ£Όμš”μ–΄: 박막, κ°•μœ μ „μ²΄, 강탄성체, λΉ„μŠ€λ¬΄μŠ€ 페라이트, λΆ„κ·Ή λ°˜μ „ 동역학, ꡬ역벽, 응λ ₯, 결함, 이λ ₯ν˜„μƒ. ν•™λ²ˆ 2006-20324Docto

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