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    ๋†’์€ ์ •๋ฅ˜๋น„๋ฅผ ๊ฐ–๋Š” ์ €ํ•ญ๋ณ€ํ™” ์‹œ๋ƒ…์Šค ์†Œ์ž์˜ ์ œ์ž‘ ๋ฐ ์ŠคํŒŒ์ดํ‚น ๋‰ด๋Ÿด ๋„คํŠธ์›Œํฌ์— ๋ฏธ์น˜๋Š” ์˜ํ–ฅ ๋ถ„์„

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    ํ•™์œ„๋…ผ๋ฌธ (์„์‚ฌ) -- ์„œ์šธ๋Œ€ํ•™๊ต ๋Œ€ํ•™์› : ๊ณต๊ณผ๋Œ€ํ•™ ์ „๊ธฐยท์ •๋ณด๊ณตํ•™๋ถ€, 2020. 8. ๋ฐ•๋ณ‘๊ตญ.This thesis suggests reverse leakage current problem which can occur when resistive random access memory (RRAM) is integrated as synaptic device with integrate-and-fire (IF) neuron circuit in spiking neural network (SNN). To this issue, self-rectifying RRAM was proposed as a solution. Ni/W/SiNx/n-Si RRAM with different bottom electrode (BE) doping concentration was fabricated and measured. Their DC and rectifying characteristics were analyzed based on the measurement data. Among them, self-rectifying RRAM with lowest BE doping concentration exhibited foremost rectifying characteristics without any additional selector or diode device. Furthermore, hardware-based system level simulation was conducted to evaluate the effect of self-rectifying RRAM synapse on spiking neural network. As a result, total 10.2%p of accuracy increment was obtained in MNIST pattern recognition simulation, utilizing the proposed RRAM.๋ณธ ๋…ผ๋ฌธ์—์„œ๋Š” ์ €ํ•ญ๋ณ€ํ™”๋ฉ”๋ชจ๋ฆฌ๊ฐ€ ์‹œ๋ƒ…์Šค ์†Œ์ž๋กœ์„œ ์ŠคํŒŒ์ดํ‚น ๋‰ด๋Ÿด๋„คํŠธ์›Œํฌ์— ์ธํ…Œ๊ทธ๋ ˆ์ดํŠธ-์•ค-ํŒŒ์ด์–ด ๋‰ด๋Ÿฐ ํšŒ๋กœ์™€ ์ง‘์ ๋  ๋•Œ์— ๋ฐœ์ƒํ•˜๋Š” ์—ญ๋ฐฉํ–ฅ ๋ˆ„์„ค ์ „๋ฅ˜ ๋ฌธ์ œ์— ๋Œ€ํ•ด์„œ ์ œ์•ˆํ•œ๋‹ค. ๋˜ํ•œ, ์ด๋Ÿฌํ•œ ๋ฌธ์ œ๋ฅผ ํ•ด๊ฒฐํ•˜๊ธฐ ์œ„ํ•ด ์ž๊ฐ€์ •๋ฅ˜๊ธฐ๋Šฅ์ด ์žˆ๋Š” ์ €ํ•ญ๋ณ€ํ™”๋ฉ”๋ชจ๋ฆฌ๋ฅผ ์ œ์•ˆ ๋ฐ ์ œ์ž‘ํ•˜์˜€๋‹ค. ๋‹ˆ์ผˆ/ํ……์Šคํ…/์‹ค๋ฆฌ์ฝ˜๋‚˜์ดํŠธ๋ผ์ด๋“œ/์‹ค๋ฆฌ์ฝ˜ ์˜ ๊ตฌ์กฐ๋ฅผ ๊ฐ€์ง„ ์ž๊ฐ€์ •๋ฅ˜๊ธฐ๋Šฅ์˜ ์ €ํ•ญ๋ณ€ํ™”๋ฉ”๋ชจ๋ฆฌ๋ฅผ ํ•˜๋ถ€์ „๊ทน์˜ ๋„ํ•‘ ๋†๋„๋ฅผ ๋‹ค๋ฅด๊ฒŒ ํ•˜์—ฌ ์ œ์ž‘ํ•˜์˜€๊ณ  ์ธก์ •ํ•˜์˜€๋‹ค. ์ธก์ •๊ฒฐ๊ณผ๋ฅผ ๋ฐ”ํƒ•์œผ๋กœ ์†Œ์ž๋“ค์˜ ์ „์••-์ „๋ฅ˜ ํŠน์„ฑ๊ณผ ์ •๋ฅ˜ ํŠน์„ฑ์„ ๋ถ„์„ํ•œ ๊ฒฐ๊ณผ, ์ œ์ž‘ํ•œ ์†Œ์ž๋“ค ์ค‘ ๊ฐ€์žฅ ๋‚ฎ์€ ๋„ํ•‘ ๋†๋„์˜ ํ•˜๋ถ€์ „๊ทน์„ ๊ฐ€์ง„ ์ €ํ•ญ๋ณ€ํ™”๋ฉ”๋ชจ๋ฆฌ์˜ ์ •๋ฅ˜๋น„๊ฐ€ ๊ฐ€์žฅ ํฐ ๊ฒƒ์œผ๋กœ ํ™•์ธํ•˜์˜€๋‹ค. ๋‚˜์•„๊ฐ€ ์ œ์•ˆํ•˜๋Š” ์ž๊ฐ€์ •๋ฅ˜๊ธฐ๋Šฅ์˜ ์ €ํ•ญ๋ณ€ํ™”๋ฉ”๋ชจ๋ฆฌ๊ฐ€ ์ŠคํŒŒ์ดํ‚น ๋‰ด๋Ÿด ๋„คํŠธ์›Œํฌ์— ์–ด๋–ค ์˜ํ–ฅ์„ ๋ฏธ์น˜๋Š”์ง€ ํ™•์ธํ•˜๊ธฐ ์œ„ํ•˜์—ฌ ํ•˜๋“œ์›จ์–ด ๊ธฐ๋ฐ˜ ์‹œ์Šคํ…œ ๋ ˆ๋ฒจ ์‹œ๋ฎฌ๋ ˆ์ด์…˜์„ ์ง„ํ–‰ํ•˜์˜€๋‹ค. ๊ทธ ๊ฒฐ๊ณผ, ์ž๊ธฐ์ •๋ฅ˜๊ธฐ๋Šฅ์˜ ์†Œ์ž๋ฅผ ์‹œ๋ƒ…์Šค๋กœ ํ•œ ๋‰ด๋Ÿด ๋„คํŠธ์›Œํฌ์—์„œ์˜ MNIST ํŒจํ„ด ์ธ์‹ ์‹œ๋ฎฌ๋ ˆ์ด์…˜ ์ธ์‹๋ฅ ์ด ์ด 10.2%p ์ฆ๊ฐ€ ํ•˜์˜€๋‹ค. ๋ณธ ๋…ผ๋ฌธ์—์„œ ์ œ์‹œํ•˜๋Š” ์ž๊ฐ€์ •๋ฅ˜ ์†Œ์ž๋Š” ์ดํ›„ ๋‹ค์–‘ํ•œ ๋‰ด๋กœ๋ชจํ”ฝ ์–ดํ”Œ๋ฆฌ์ผ€์ด์…˜์˜ ๊ฒฐ๊ณผ๋ฅผ ์„ฑ๊ณต์œผ๋กœ ์ด๋Œ ์ˆ˜ ์žˆ๋Š” ๊ฐ€๋Šฅ์„ฑ์„ ์ง€๋‹Œ๋‹ค.Chapter 1. Introduction 1 1.1. Integrate-and-fire Neuron Circuit 3 1.2. Resistive Random Access Memory 5 Chapter 2. Reverse Leakage Current in Neuron Circuit 8 2.1. Reverse Leakage Current 8 Chapter 3. Self-rectifying RRAM 12 3.1. Self-rectifying RRAM 12 3.2. Measurement and Analysis 15 Chapter 4. System Level Evaluation 20 4.1. System Level Evaluation of Self-Rectifying RRAM 20 4.2. Simulation Results 24 Chapter 5. Conclusions 27 References 28 Abstract in Korean 33Maste

    The Study on Japanese Empire's Invision to the continent and its cause

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