Electronic structure and thermal transport properties of Chalcogenide mGeTe•nSb2Te3 compounds

在信息高速发展和能源加速枯竭的今天，寻找高效的新能源材料和信息存储材料迫在眉睫。在锗（Ge）、锑（Sb）、碲（Te）三元相图中，二元相GeTe和Sb2Te3连线上的一系列mGeTe•nSb2Te3（简称GST）化合物既是高效的热电转换材料，同时又能利用快速相变存储数据，具有非常广阔的应用前景。无论是作为相变存储材料还是热电材料，GST化合物中的热传导是影响其使用性能的至关重要的因素。材料的热传导是一个非常复杂的过程，研究者至今仍在寻找一种高效、准确、低成本和普适的测量方法。受限于测量技术，在研究材料热输运性质的过程中总是存在很多的争议。本论文利用基于密度泛函理论的第一性原理方法，结...Today, with the rapid developing of information technology and the worsening energy crisis, new information storage technology and efficient new energy materials are needed. Chalcogenides with the composition lying in the GeTe•Sb2Te3 line in the Ge-Sb-Te ternary phase-diagram, which can be written as mGeTe•nSb2Te3, (GST for short), have been widely investigated as next generation non-v...学位：工学博士院系专业：材料学院_材料学学号：2072011015348

关于高等教育若干问题的思考——厦门大学博士生导师潘懋元先生访谈

世界大趋势、个人因素以及时机问题是潘懋元教授创建高等教育学的三大缘由。访谈中，潘教授主要围绕微观教学研究、双一流建设、青年教师发展、互联网＋教学以及混合所有制办学等热点问题谈对高等教育的看法，并对高等教育的未来发展趋势进行预测

The Theoretical Design of Higher Education Quality Construction

经济社会的现代化发展对高等教育的人才培养提出了更高要求。高等教育质量已成为一个世界性问题。中国的这一问题更为突出,高等教育质量建设的任务更为紧迫。高等教育质量建设是一个庞大的系统工程,它的基本框架是:转变思想是前提;体制改革是关键;课程与教学改革是核心;优化生源、教师队伍建设和增加投入是保证;评估体系建构是准绳。这一系统工程需要多方协作,共同承担理论研究和实践推行任务。The modernization of economic and social development has put forward higher requirements for higher education personnel training.The quality of higher education has become a worldwide problem.Chinese higher education quality is even more serious,so that the task of higher education quality construction is more urgent.Nowadays,higher education quality construction is a huge and systematic project.Its basic framework is as below:changing the idea is the premise;the system reform is the key;the curriculum and teaching reform is the core;optimization of enrollment,construction of teachers' team and increase input are the guarantees;the evaluation system construction is the yardstick.Such system engineering needs multi cooperation to undertake the task of theoretical research and practical implementation jointly

Electrodeposition of Co-Sb Thin Films in Aqueous Solution

采用电化学循环伏安法分析了柠檬酸水溶液中CO2+、SbO+的沉积电位,利用恒电位沉积的方法,在不锈钢基片上,从柠檬酸水溶液中沉积出CO-Sb薄膜.运用X射线衍射和扫描电子显微镜对薄膜的结构、组成以及形貌进行了分析.结果表明,在柠檬酸水溶液中,CO2+和SbO+可同时沉积到不锈钢基片上,形成CO-Sb薄膜,在不同的沉积电位下,薄膜形成不同的物相.薄膜的形貌呈现颗粒状,分布比较均匀.薄膜在充满Ar的管式炉中热处理2H,热处理温度为400℃,结果发现薄膜物相组成发生了很大变化,转变为主要由晶体COSb3组成,还有少量的COSb形成.Co-Sb films were synthesized on the stainless steel electrode by electrochemical deposition in aqueous solution.Growth behavior of Co-Sb films was studied with cyclic voltammetry and potentiostatic method.The microstructure,composition and morphology of the films were studied by X-ray diffraction,scanning electron microscopy and electron probe microanalysis.Effects of deposition potentials and heat treatment on the microstructure,chemical component,phase composition of the deposited films were also studied and discussed in detail.It turns out that cobalt and antimony can be deposited on the steel substrate together,forming Co-Sb films.The films were composed of crystalline antimony and non-crystal cobalt.After heat treatment of 400 ℃in tube furnace,the films mainly consisted of cobalt triantimonide with less cobalt monoantimonide.中央高校基本科研业务费专项资金(2010121054;201112G016

稀土区质子滴线附近新的β缓发质子衰变

用重离子束3 5 Ar轰击缺中子同位素靶92 Mo ,96Ru和10 6Cd产生了质子滴线附近的β缓发质子先驱核12 5 Nd ,12 8Pm ,12 9Sm ,13 7Gd和13 9Dy .配合氦喷嘴带传输系统用“p γ”符合方法对它们进行了肯定的鉴别 .它们的半衰期分别为 :0 .6 0 ( 1 5 )s,1 .0 ( 3)s ,0 .5 5 ( 1 0 )s ,2 .2 ( 2 )s和 0 .6 ( 2 )s.用统计模型理论计算对实验测定的12 5 Nd ,12 9Sm ,13 7Gd和13 9Dy的 ,和从前报道的12 1Ce ,13 5 Gd的β缓发质子衰变的能谱和分支比进行了拟合 .提取出12 1Ce ,12 5 Nd ,12 9Sm ,13 5 Gd ,13 7Gd和13 9Dy的基态自旋 宇称分别为5 / 2 ± ,5 / 2 ± ,1 / 2 +(或 3/ 2 +) ,5 / 2 +,7/ 2 ± 和 7/ 2 +.实验初步指认的基态自旋 宇称值与Nilsson能级图的预言值相符间接表明这 6种核素的基态具有大形变 ,形变参数 β2在 0 .3左右

~(89)Ru的β缓发质子衰变性质

藉助氦喷嘴带传输系统 ,采用“p γ”符合的鉴别原理 ,成功地合成与鉴别了5 8Ni(36 Ar,2p3n)反应产生的核素89Ru ,并研究了它的 β缓发质子衰变性质 .实验给出89Ru的衰变半衰期为 (1 .2± 0 .2 )s,测定了它的β缓发质子能谱 ,提取出了89Ru经缓发质子衰变布居到子核88Mo的 2 + 和 4+ 态的相对终态分支比 (1 0 0∶6 ) .通过与统计模型计算结果进行对比 ,初步指定了89Ru基态的自旋 宇称 (5 / 2 + 或 7/ 2 ±)和质量过剩 (- 5 9.5MeV)

Electrochemical Deposition of GaSb Thin Films for Phase Change Memory in Aqueous Solutions

利用恒电位共沉积技术和热处理的方法成功制备了GaSb薄膜，探索了添加乙二醇溶剂对薄膜结晶性和形貌的影响. 采用循环伏安法初步研究了共沉积GaSb的机理，并用X-射线衍射技术（XRD）、扫描电子显微技术（SEM）和能谱分析（EDS）表征、观察样品. 研究表明，在沉积过程中，SbO+先还原成Sb单质，再诱导Ga3+发生共沉积；沉积电位对薄膜的结晶性、微观形貌和成分有显著影响；电解液加入乙二醇更利于在较正电位下直接沉积出GaSb，且有效地提高了薄膜的结晶度，改善了薄膜的微观形貌.The synthesis of GaSb thin films has been successfully performed by a method involving one-step potentiostatic electrodeposition and thermal annealing. The effect of ethylene glycol as a solvent in aqueous electrolyte solution on the crystallinity and morphology of the prepared thin films was discussed. The electrodeposition mechanisms of GaSb were studied by cyclic voltammetry, X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) were used to analyze structure, morphology and composition of the thin films. The results show that SbO+ is first reduced to Sb, and Ga3+ is deposited via the induced co-deposition mechanism. The deposition potential has great effect on the crystallinity, morphology and composition of the GaSb thin films. Ethylene glycol in the aqueous electrolyte solution is beneficial to deposit GaSb directly at more positive potential, and effective to improve the crystallinity and microstructure of the thin films.中央高校基本科研业务费专项资金（No. 2010121054, 201112G016）资助作者联系地址：厦门大学材料学院材料科学与工程系，福建 厦门 361005Author's Address: Department of Materials Science and Engineering, College of Materials, Xiamen University, Xiamen 361005, Fujian, China通讯作者E-mail：[email protected]

首次测定短寿命缺中子同位素~（153）Er和~（157）Yb的EC／β~＋衰变

利用（１６）Ｏ重离子束轰击（１４２）Ｎｄ和（１４７）Ｓｍ同位素靶分别生成（１５３）Ｅｒ和（１５７）Ｙｂ．借助氦喷嘴带传输系统和Ｘ－γ、γ－γ符合测量方法分离鉴别核素并测量其衰变性质．首次建立了（１５３）Ｅｒ和（１５７）Ｙｂ的ＥＣ／β＋衰变纲图．从中指认出（１５３）Ｈｏ的一个新三（准）粒子态和两个新单粒子态，指认出（１５７）Ｔｍ的一个新的同质异能态和一条新转动带．低位能级系统分析表明：在Ｈｏ和Ｔｍ这两条奇Ａ核的同位素链中基态形状的转变区都在中子数８６和８８之间

Amplitude analysis of the decays D0 → π+π−π+π− and D0 → π+π−π0π0*

Using e+e− annihilation data corresponding to an integrated luminosity of 2.93 fb−1 taken at the center-of-mass energy √s = 3.773 GeV with the BESIII detector, a joint amplitude analysis is performed on the decays D0 → π+π−π+π− and D0 → π+π−π0π0 (non-η). The fit fractions of individual components are obtained, and large interferences among the dominant components of the decays D0 → a1(1260)π, D0 → π(1300)π, D0 → ρ(770)ρ(770), and D0 → 2(ππ)S are observed in both channels. With the obtained amplitude model, the CP-even fractions of D0 → π+π−π+π− and D0 → π+π−π0π0 (non-η) are determined to be (75.2 ± 1.1stat. ± 1.5syst.) % and (68.9 ± 1.5stat. ± 2.4syst.)%, respectively. The branching fractions of D0 → π+π−π+π− and D0 → π+π−π0π0 (non-η) are measured to be (0.688 ± 0.010stat. ± 0.010syst.)% and (0.951 ± 0.025stat. ± 0.021syst.)%, respectively. The amplitude analysis provides an important model for the binning strategy in measuring the strong phase parameters of D0 → 4π when used to determine the CKM angle γ(φ3) via the B− → DK− decay