9 research outputs found

    低束流钕离子注入外延硅薄层的结构研究

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    采用金属蒸气真空弧(MEVVA)离子源以低束流方式将Nd离子注入到外延硅片中,经高温快速退火处理,制备了结晶良好的钕硅掺杂层。用扫描电子显微镜(SEM)、反射式高能电子衍射(RHEED)和X射线衍射(XRD)分析了在不同退火条件下样品注入层相结构的变化。研究结果表明,经高温热处理,注入层形成结晶良好的钕硅化合物,出现由Nd_5Si_4相向NdSi相转变的趋势。并对其转变过程进行了初步探讨

    能级填充对量子阱光学性质的影响

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    在特殊设计的三势垒双势阱结构中,利用来自发射极的电子注入和电子向收集极的共振隧穿逃逸调控量子阱不同子能级上的填充状态,发现激发态上的电子占据起抑制量子限制Stark效应的作用.在极低偏压下,量子阱中少量过剩电子诱发了用简单带-带跃迁无法解释的光致发光光谱行为.…

    Measurement of integrated luminosity of data collected at 3.773 GeV by BESIII from 2021 to 2024*

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    Amplitude analysis of the decays D0π+ππ+πD^0\rightarrow\pi^+\pi^-\pi^+\pi^- and D0π+ππ0π0D^0\rightarrow\pi^+\pi^-\pi^0\pi0

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    Determination of the number of ψ(3686) events taken at BESIII

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    The number of ψ(3686) events collected by the BESIII detector during the 2021 run period is determined to be (2259.3±11.1)×106 by counting inclusive ψ(3686) hadronic events. The uncertainty is systematic and the statistical uncertainty is negligible. Meanwhile, the numbers of ψ(3686) events collected during the 2009 and 2012 run periods are updated to be (107.7±0.6)×106 and (345.4±2.6)×106, respectively. Both numbers are consistent with the previous measurements within one standard deviation. The total number of ψ(3686) events in the three data samples is (2712.4±14.3)×10^
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