实时荧光PCR研究新进展

实时荧光PCR技术自问世以来,以其高特异性,高灵敏性,可定量,无污染,而得到了广泛的应用.该技术是根据荧光共振能量转移(fluorescence resonance energy transfer,FRET)原理,设计相应的荧光标记核酸探针,通过PCR反应对相应靶DNA进行均相定性定量测定的技术.根据检测中所使用的荧光探针分类, 目前已经开发出TaqMan,Molecular Beacon, Scorpion,LightCycler,Single—labeled probe, ResonSense,Angler以及双链探针等相关技术.本文对该技术的研究进展作一综述

IC测试系统精密定时器的新结构

讨论了一种适合于VLSI的精密定时子系统的新结构。该结构将定时计数器分为高速和低速两部分，低速部分采用存储器代替分散的寄存器，既有利于集成，又降低了系统的成本。同时，新的精密定时子系统还解决了定时中不完整周期的问题

Frequency reconfigurable antenna with micromechanical patch

Conference Name:International Workshop on Anti-counterfeiting, Security, and Identification. Conference Address: Xiamen, PEOPLES R CHINA. Time:APR 16-18, 2007.The frequency reconfigurable antenna normally designed with MEMS switch is flexible to change its operating frequency. However, when the operating frequency is up to millimeter wave or even higher, this kind MEMS switching operation will deteriorate performance of antenna. A novel frequency reconfigurable antenna is designed with micromechanical patch moving via electrostatic force. As the bias voltage between patch and antenna is changed, it makes the patch to move and the antenna operating frequency changes too. Its operating mode is equivalent to changing the relatively permittivity of antenna substrate. Architecture of this kind of micromechanical patch antenna is presented and its principle is analyzed. With the results of parameter analysis, the desire performance of antenna can be designed perfectly, and the simulation result is coincident with the prospective analysis

增强ZnO基发光二极管紫光电致发光性能的方法

 本发明公开了一种增强ZnO基发光二极管紫光电致发光性能的方法,该方法是在ZnO/AlN界面插入一层Ag纳米颗粒,通过Ag局域态表面等离激元与器件的电致发光相互耦合,提高ZnO基发光二极管紫光电致发光性能。实验发现Ag纳米颗粒的局域态表面等离激元共振峰与ZnO近带边发光峰的位置相近,满足共振耦合条件,且粗糙的Ag纳米颗粒的表面有利于等离激元有效耦合成光且能够明显提高光的抽取效率。利用本发明,显著提高了ZnO基发光二极管紫光电致发光性能

增强n-ZnO/AlN/p-GaN发光二极管的电致发光性能的方法

 本发明公开了一种增强n-ZnO/AlN/p-GaN发光二极管的电致发光性能的方法,该方法是在n-ZnO/AlN/p-GaN发光二极管的n-ZnO薄膜中插入一层Ag纳米颗粒,利用Ag局域态表面等离激元与ZnO近带边发光强的相互耦合作用,来提高n-ZnO/AlN/p-GaN异质结发光二极管电致发光性能。实验发现Ag纳米颗粒的局域态表面等离激元共振峰与ZnO近带边发光峰的位置相近,满足共振耦合条件,且粗糙的Ag纳米颗粒的表面有利于等离激元有效耦合成光且能够明显提高光的抽取效率。利用本发明,显著提高了n-ZnO/AlN/p-GaN异质结发光二极管电致发光性能