Preliminary Research on Micro Vacuum Sensor Based on Field Emission of Silicon Tip

本文在目前基于场发射原理的真空传感器研究得较少，尚无成熟的、可靠的产品问世的情况下，将MEMS技术和真空微电子技术相结合，提出了一种基于纳米硅尖场发射的微真空传感器原型方案。 基于纳米硅尖场发射的微真空传感器是一种以真空微电子学中的场发射现象作为输出敏感方式，利用MEMS技术制作的，用于测量真空度大小的传感器。其结构简单，具有灵敏度高、信号易检测、易于集成、便于批量化生产等优点，在诸如真空设备、航空航天装置、医疗器械等等需要真空测量的领域中都具有巨大的市场潜力，特别是集成在真空封装的微器件里用作微器件可靠性检测方面，具有广泛的应用前景。 本文的研究工作主要包含以下几个方面： (1)在查阅...In this thesis, the MEMS vacuum sensor based on field emission of silicon tips array is brought forward firstly by integration of the MEMS technology and vacuum microelectronics technology at the situations of few researches and no usable product at present. This vacuum sensor fabricated by MEMS techniques utilizes the field emission phenomena as its sensing mechanism. It consists of cathode sili...学位：工学硕士院系专业：物理与机电工程学院机电工程系_精密仪器及机械学号：20042901

Field emission vacuum sensor

场发射真空传感器是采用MEMS加工工艺研制一种新型的基于硅尖阵列场发射原理的微型真空传感器。通过理论分析,确立了该种传感器中硅尖场发射电流与真空度的关系。并利用干法刻蚀工艺,在硅片上制作了高3.2μm,曲率半径小于70nm的200×42硅尖阵列。保持阳极与硅尖距离为1μm的情况下,可以观察到阳极电压为10V左右时开始有明显的场发射电流。实验结果表明,在10V-15V的输入电压范围内,通过测试场发射电流所得到的真空度值,其最大误差不超过10%。该真空传感器具有制作简单、易于集成、信号测量容易、自身不带密封腔等优点,具有潜在的应用前景和市场潜力。A micro vacuum sensor based on field emission of silicon tips array is brought forward firstly by integration of the MEMS technology.The relation between emission current and pressure has been introduced by theoretical analysis.200 42 tips array with 3.2μm height and below 70nm diameter has been fabricated on the silicon substrate using dry etching process.Keeping 1μm distance between the silicon tips and anode electrode,the emission current can be observed at 10V anode voltage.From test results,the micro vacuum sensor has a lower error with the range of 10-15V,which less than 10 percent can be achieved.Because this micro vacuum sensor is characterized of high sensitivity,easiness for integration and no sealing chamber in the sensor,it has very promising applications and potential market.国家自然科学基金(No.50675184);; 福建省科技计划重点项目(No.2002H022);; 回国留学人员基金;; 厦门大学新世纪优秀人才基金资