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本報告研究以光化學方式在氮化鎵上 升呈自然氧化膜，並研究其對於光電性質 之影響。Abstract ---- We investigate the photo-enhanced wet oxidation effects on the optical properties of GaN/InGaN quantum wells. Oxidation of GaN is found to take place in phosphorus acid solutions in a pH range from 3 to 4, and results in a maximum oxidation rate of 224 nm/h. The spectral red shift and more than 50% enhancement on the photo-luminescence intensity on the oxidized InGaN QW are attributed the oxide induced stress and surface passivation effects