改良分子信标—实时PCR快速检测霍乱弧菌

目的　建立改良分子信标—实时PCR检测霍乱弧菌的快速方法 ,应用于霍乱监测。　方法　根据GenBank公布的霍乱弧菌肠毒素基因A亚单位 (ctxA)的保守序列 ,设计一对引物和改良分子信标探针 ,并进行特异性和灵敏度分析 ;同时以 11种细菌作对照 ,建立改良分子信标检测霍乱弧菌的实时PCR反应体系 ,应用于霍乱监测。　结果　霍乱弧菌改良分子信标检测体系检测 12种细菌 ,只有霍乱弧菌有荧光信号 ,与其他细菌无交叉反应 ,DNA灵敏度为10 2 4fg/ul ,菌液灵敏度为 3 2cfu/ml或 3cfu/PCR反应体系。对 10 0份海产品和 3 0份腹泻病人大便标本进行检测 ,结果都为阴性。检测时间仅需 2h。　结论　改良分子信标—实时PCR检测体系快速、灵敏度高、特异性强 ,可用于霍乱的快速诊断 ,为霍乱的分子流行病学调查提供新的检测手

金属Cu表面三维齿状微图形的复制加工——约束刻蚀剂层技术 (CELT)的应用

主要介绍了一种Cu的CELT加工的化学刻蚀体系和捕捉体系 ,并通过控制刻蚀时间、刻蚀电流、刻蚀剂浓度、捕捉剂浓度等实验参数和优化电化学模板的制作工艺 ,以规整的齿状结构为模板 ,在Cu的表面实现了三维微结构的复制加工 ,得到了与齿状结构模板互补的三维微结构 ,用SEM和AFM对实验结果进行了表征 ,表征结果证明约束刻蚀剂层技术在金属三维加工方面的可行性和潜在优势。金属Cu由于具有优良的导热导电性能以及很好的延展性 ,在微系统 (也称微机电系统 )中应用广泛 ,因此对Cu的刻蚀加工对微系统技术的发展具有重要的意义。约束刻蚀剂层技术 (ConfinedEtch antLayerTechnique简称CELT)作为一种新型的微加工技术[1] ,能够加工复制出复杂三维结构 ,到目前为止 ,该技术已成功应用于Si、GaAs等材料微结构的复制加工[2 ,3]

用规整膜板对砷化镓的三维微结构图形加工刻蚀

以微齿轮图形结构作为规整模板 ,用约束刻蚀剂层技术对GaAs样品表面进行了加工刻蚀 .在有捕捉剂H3AsO3存在的情况下 ,规则微齿轮图形能够很好地在样品表面复制 .刻蚀结果与没有捕捉剂存在时的刻蚀结果做了比较 .另外还测试了不同方法制得膜板的性能 ,初步探讨了电化学模板的制作工艺

Novel L-band multiwavelength raman fiber laser based on three-stage mixed-cascaded phosphor-silicate raman process

Conference Name:International Conference on Advanced Infocomm Technology 2011, ICAIT 2011. Conference Address: Wuhan, China. Time:July 11, 2011 - July 14, 2011.We experimentally demonstrate an L-band multiwavelength Raman fiber laser based on the three-mixed-cascaded stimulated Raman scattering (SRS) of both P2O5 and SiO2/GeO2 in a phosphosilicate fiber. A 1064 nm Yb3+-doped double-clad fiber laser (YDCFL) is used to pump a spool of 1-km phosphosilicate fiber. The three-stage mixed-cascaded Raman cavity is arranged as: 1) the 1st- and 2nd-order Raman cavities use the SRS of P2O5 and are formed by the two pairs of highly-reflective fiber Bragg gratings at 1239 and 1484 nm, respectively; 2) the 3rd-order Raman cavity uses the SRS of SiO 2/GeO2 and is completed by a polarization-maintaining fiber (PMF) Sagnac comb filter and a broadband fiber loop mirror. When the injected pump power from YDCFL is 4.8 W, up to 12-wavelength stable oscillation around 1601 nm has been obtained with wavelength spacing of 0.58 nm and extinction ratio of >30 dB

Three-dimensional Microfabrication on GaAs Using a Regular Patterns Mold

以微齿轮图形结构作为规整模板 ,用约束刻蚀剂层技术对GaAs样品表面进行了加工刻蚀 .在有捕捉剂H3AsO3存在的情况下 ,规则微齿轮图形能够很好地在样品表面复制 .刻蚀结果与没有捕捉剂存在时的刻蚀结果做了比较 .另外还测试了不同方法制得膜板的性能 ,初步探讨了电化学模板的制作工艺 .Electrochemical etching of single crystal GaAs (111) was performed with a regular mold which resembles the micro_gear patterns. The etched patterns on GaAs was very consistent with the negative copies of the mold when the confined etchant layer technique (CELT) was used. However when the scavenger chemical of H 3AsO 3 was not added in the etching solution, the regular micro_gear patterns of the mold could not be obtained. In addition ,the procedure of fabricating a electrochemical mold is introduced and the characteristics of the mold are briefly discussed.作者联系地址：厦门大学固体表面物理化学国家重点实验室!化学系,物理化学研究所,福建厦门361005,厦门大学固体表面物理化学国家重点实验室!化学系,物理化学研究所,福建厦门361005,清华大学精密仪器系!北京100084,厦门大学固体表面物理化学国家重点实验室!化学系,物理化学研究所,福建厦门3610Author's Address: 1 State Key Lab for Phys.Chem.of the Solid Surf., Dept.of Chem., Xiamen Uni