Fabrication of photodetector by compatible standard Si process

提出采用Si基标准工艺进行研制与标准工艺兼容的光敏三极管,重点解决光敏三极管结构与标准工艺兼容性问题,并实现对其结构、性能的优化设计。通过CAD; ENCE软件,画出不同光敏三极管的版图;根据华润上华(CSMC)Si基标准工艺流程,采用器件模拟软件Silvaco,对光敏三极管结构进行构建和仿; 真;基于理论分析结果,通过设计改变结构优化光敏三极管性能。采用CSMC标准Si工艺,实现了基区面积分别为40 mum*40 mum、50; mum*100 mum、80 mum*100 mum和100 mum*100; mum光敏三极管的流片、封装和测试。结果显示,所设计的光敏三极管的响应度达到2.02 A/W,放大倍数beta达到60倍,最大带宽达到50; MHz左右。并且,标准Si工艺的低成本和放大集成电路的兼容性,使得制备的光敏三极管可以广泛适用于快速光耦合器、光数据接收器等应用领域。In this paper,we adopt standard Si-based process to develop a; phototransistor which is compatible with the standard process, and solve; the compatibility problems between the structure of phototransistor and; standard processes. Furthermore, we achieve the optimal design of its; structure and properties. According to standard Si-based process from; CSMC,based on the theoretical analysis, we adopt Sil vaco to build and; simulate the phototransistor by changing the structure of it. After; packaging and testing,the phototransistors with the base areas of 40; mum*40 mum,50 mumX 100 mum,80 mum* 100 mum and 100 mum* 100 mum are; achieved The experimental results show that the performance of the; designed photosensitive transistor is good The responsivity can reach; 2.02 A/ W, magnification factor can be up to 60, and the maximum; bandwidth can reach as high as 50 MHz. Furthermore, the low cost and; compatibility of standard Si process make it suitable for fast optical; coupler,optical data receivers and other optical devices.国家自然科学基金; 安徽省高校省级自然科学基金; 安徽省自然科学基金; 厦门大学校长基