The Study on Multiple Quantum Well of TensileStrained InGaAs/InP Grown by LP-MOCVD

首先从理论上研究了在应变情况下量子阱中能级的计算，然后利用lP-MOCVd研究了IngAAS/InP组份的控制及生长条件，最后生长伸张应变为0.5%的四个量子阱IngAAS/InP结构材料，利用Pl光谱测量得最小阶宽为1.8nM。The energy levels of quantum well (QW) under diFFerential strain have been calculated,the composition and growth rate of InGaAs matched with InP have been studied by Low Pressure Metallorganic Chemical Vapour Deposition (LP-MOCVD).Four-QW InGaAs/InP with 0.5% tensile strain has been grown.The narrowest well width is 1.8 nm by PL spectroscopy measurement

高速脉码调制OEIC光发送机驱动电路的设计

本文报道一种适合用现有工艺条件进行研制的OEIC光发送机的驱动电路。该驱动电路不仅对信号具有一定的整形能力,而且更适于高速脉码调制。同时,当制作工艺条件变化时具有较高的稳定性。对该电路进行计算机辅助分析和优化,得到该电路的上升、下降时间为120ps、140ps

Optimum design of the well number for InGaAsP/InP SCH QW laser and its fabrication

【中文摘要】 根据对InGaAsP－InP分别限制量子阱激光器结构的注入效率的分析和利用X射线衍射对InGaAsP－InP20个周期的多量子阱结构异质界面的研究，设计、制备了4个阱的InGaAsP－InP分别限制量子阱激光器结构。利用质子轰击制得条形激光器。阈值电流为100mA，直流室温连续工作。单面输出外微分量子效率为36％。 【英文摘要】 Based on the analysis of injection efficiency for InGaAsP/InP SCH - QW laser and the research on X - ray diffraction kinetic simulation, a four - well InGaAsP - InP MQW laser structure is designed and fabricated. A stripe laser under CW operation with threshold as low as 100 mA is also obtained by means of proton implantation with single - side external differential quantum efficiency of 36%.福建省自然科学基金;国家自然科学基

The Study of GaAs/InP MESFET for OEIC

【中文摘要】 提出了一种新的生长过渡层的方法，并利用低压金属有机气相外延技术在InP衬底上生长出高质量GaAs外延材料，用X射线双晶衍射测得5μm厚GaAs外延层的（004）品面行射半高峰宽（FWHM）低至140arcsee。并制出GaAs金属半导体场效应晶体管（MESFET），其单位跨导为100mS／mm，可满足与长波长光学器件进行单片集成的需要。 【英文摘要】 A new method for growing transition-layer has been presented, andhigh quality GaAs epilayers have been grown on InP substrate by low pressure metal organic vapour phase epitaxy (LP-MOVPE). The double-crystal X-ray diffraction (DCD) characterization of GaAs epilayer with the thickness of 5 μm shows thatthe full width at half maximum (FWHM) of (004) rocking curve is as low as 140arc sec. As a result, the GaAs metal semiconductor field effect transistors (MESFET) with the transconductance of 100 mS/mm have bee...福建省自然科学基

The Choice of Well Number and Fabrication of InGaAsP Multiquantum-well Laser Diodes

【中文摘要】 针对目前多量子阱激光器结构设计中，忽略了载流子在每个阱内的注入不均匀性的问题，从油松方程和电流连续方程出发，提出每个阱单独考虑的计算方法，从而比较精确地计算出多量子阱激光器的净增益，给出多量子阱激光器的最佳阱数选择，根据设计结果，生长了ＩｎＧａＡｓＰ分别限制量子阱结构．利用质子轰击制得条形量子阱激光器，实现室温连续工作．阈值电流为６０ｍＡ，激射波长为１．５２μｍ，单面输出外微分量子效率为３６％． 【英文摘要】 The nonuniformity of carrier injected to each well was unreasonably neglected in conventional structure design of multiquantum well laser diode. This paper reports an optimization method by calculating separately the contribution of carrier injection of each well to the total net gain for the first time, based on Poisson's equation and continuity. A optimal choice of well number has been therefore given. According to the theoretic results, InGaAsP multiquantum well structure has been grown. The threshold ...国家自然科学基