Ta/NiO/NiFe/Ta的磁性及界面的结构

利用磁控反应溅射方法以Ta作为缓冲层制备了Ta/NiO/NiFe/Ta薄膜，磁性分析表明，该结构薄膜的交换耦合场为9.6×10~3A/m，但量所需NiO的实际厚度增加了。采用X射线光电子能谱研究了Ta/NiO/Ta界面，并进行计算机谱图拟合分析。结果表明界面反应是影响层间耦合的一个重要因素。在Ta/NiO界面处发生了反

磁性多层膜中SiO_2/Ta界面反应及其对缓冲层的影响

磁性多层膜常以金属Ta作为缓冲层。利用磁控溅射方法在表面有300nm厚SiO_2氧化膜的单晶硅(100)基片上沉积了Ta/NiFe/Ta薄膜。采用X射线光电子能谱（XPS）对该薄膜进行了深度剖析，并且对获得的Ta 4f和Si 2p的高分辨XPS谱进行计算机谱图拟合分析。结果表明在SiO_2/Ta界面处发生了化学反

光子晶体环形谐振腔异质结构超微多路光分束器

基于直波导和环形谐振腔的耦合特性,设计了一种新型、高效的二维光子晶体异质结构光分束器.时域有限差分法模拟表明,该设计仅仅通过改变介质柱的折射率,使光场发生重新分布,便可实现输出能量的均分或自由分配.在通信波长范围,该设计结构尺寸小、分束角度大、分束率高,这些特性使其在光通信领域具有重要的应用前

Effects of Spartina alterniflora invasion on morphological characteristics of tidal creeks and plant community distribution in the Yellow River Estuary

Large-scale invasion of Spartina alterniflora on coastal wetlands has a great impact on the morphological characteristics of tidal creeks and the succession of plant communities. Based on the remote sensing images from 2008 to 2020, we analyzed the evolution characteristics of S. alterniflora invasion and its effect on the morphological characteristics and plant community distribution of tidal flats in the Yellow River Estuary by using 3S technology, regression analysis, and statistical analysis. The results showed that the area of S. alterniflora had increased rapidly in the Yellow River Estuary since 2008, with a growth rate of 4.47 km~2·a~(-1). By 2020, the distribution area of S. alterniflora accounted for 26% of the estuary area. With the expansion of S. alterniflora, the areas of Phragmites australis and Suaeda salsa were decreased gradually, with arate of 0.72 and 0.39 km~2·a~(-1), respectively. In the typical tidal flat area of the Yellow River Estuary, the length and density of tidal creeks were decreased by 8.12 km and 0.24 km·km~(-2), respectively. The distribution area of P. australis and S. salsa, as well as the length and density of tidal creeks were significantly negatively correlated with the distribution area of S. alterniflora

Ta/NiFe/Cu/NiFe/FeMn/Ta自旋阀多层膜中Cu的层间偏聚及其对磁性的影响

实验结果表明Ta/NiFe/FeMn/Ta多层膜的交换耦合场Hex要大于Ta/NiFe/Cu /NiFe/FeMn/Ta自旋阀多层膜中的Hex. 为了寻找其原因, 用X射线光电子能谱(XPS)研究了Ta(12 nm)/NiFe(7 nm), Ta(12 nm)/NiFe(7 nm)/Cu(4 nm)和Ta(12 nm)/NiFe(7 nm)/ Cu(3 nm)/NiFe(5 nm) 3种样品, 研究结果表明前两种样品表面无任何来自下层的元素偏聚, 但在第3种样品最上层的NiFe表面上, 探测到从下层偏聚上来的Cu原子. 认为: Cu在NiFe/FeMn层间的存在是Ta/NiFe/Cu/NiFe/FeMn/Ta自旋阀多层膜的Hex低于Ta/NiFe/FeMn/Ta多层膜Hex的一个重要原因