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磁性多层膜中SiO_2/Ta界面反应及其对缓冲层的影响
Authors
于广华
朱逢吾
柴春林
马纪东
Publication date
1 January 2002
Publisher
Abstract
磁性多层膜常以金属Ta作为缓冲层。利用磁控溅射方法在表面有300nm厚SiO_2氧化膜的单晶硅(100)基片上沉积了Ta/NiFe/Ta薄膜。采用X射线光电子能谱(XPS)对该薄膜进行了深度剖析,并且对获得的Ta 4f和Si 2p的高分辨XPS谱进行计算机谱图拟合分析。结果表明在SiO_2/Ta界面处发生了化学反
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Last time updated on 29/11/2016