Electrically controllable surface magnetism on the surface of topological insulator

We study theoretically the RKKY interaction between magnetic impurities on the surface of three-dimensional topological insulators, mediated by the helical Dirac electrons. Exact analytical expression shows that the RKKY interaction consists of the Heisenberg-like, Ising-like and DM-like terms. It provides us a new way to control surface magnetism electrically. The gap opened by doped magnetic ions can lead to a short-range Bloembergen-Rowland interaction. The competition among the Heisenberg, Ising and DM terms leads to rich spin configurations and anomalous Hall effect on different lattices.Comment: 5 pages, 3 figures, 1 tabl

Spin-polarized transport in a lateral two-dimensional diluted magnetic semiconductor electron gas

The transport property of a lateral two-dimensional diluted magnetic semiconductor electron gas under a spatially periodic magnetic field is investigated theoretically. We find that the electron Fermi velocity along the modulation direction is highly spin-dependent even if the spin polarization of the carrier population is negligibly small. It turns out that this spin-polarized Fermi velocity alone can lead to a strong spin polarization of the current, which is still robust against the energy broadening effect induced by the impurity scattering.Comment: 3 pages, 3 figures, submitted to Appl. Phys. Let

Electric field driven quantum phase transition between band insulator and topological insulator

We demonstrate theoretically that electric field can drive a quantum phase transition between band insulator to topological insulator in CdTe/HgCdTe/CdTe quantum wells. The numerical results suggest that the electric field could be used as a switch to turn on or off the topological insulator phase, and temperature can affect significantly the phase diagram for different gate voltage and compositions. Our theoretical results provide us an efficient way to manipulate the quantum phase of HgTe quantum wells.Comment: 4 pages, 4 figure

Magnetic coupling properties of rare-earth metals (Gd, Nd) doped ZnO: first-principles calculations

The electronic structure and magnetic coupling properties of rare-earth metals (Gd, Nd) doped ZnO have been investigated using first-principles methods. We show that the magnetic coupling between Gd or Nd ions in the nearest neighbor sites is ferromagnetic. The stability of the ferromagnetic coupling between Gd ions can be enhanced by appropriate electron doping into ZnO:Gd system and the room-temperature ferromagnetism can be achieved. However, for ZnO:Nd system, the ferromagnetism between Nd ions can be enhanced by appropriate holes doping into the sample. The room-temperature ferromagnetism can also be achieved in the \emph{n}-conducting ZnO:Nd sample. Our calculated results are in good agreement with the conclusions of the recent experiments. The effect of native defects (V$_{\rm{Zn}}$, V$_{\rm{O}}$) on the ferromagnetism is also discussed.Comment: 5 pages, 5 figure

D'yakonov-Perel' spin relaxation in InSb/AlInSb quantum wells

We investigate theoretically the D'yakonov-Perel' spin relaxation time by solving the eight-band Kane model and Poisson equation self-consistently. Our results show distinct behavior with the single-band model due to the anomalous spin-orbit interactions in narrow band-gap semiconductors, and agree well with the experiment values reported in recent experiment (K. L. Litvinenko, et al., New J. Phys. \textbf{8}, 49 (2006)). We find a strong resonant enhancement of the spin relaxation time appears for spin align along [$1\bar{1}0$] at a certain electron density at 4 K. This resonant peak is smeared out with increasing the temperature.Comment: 4 pages, 4 figure

Electrically-controllable RKKY interaction in semiconductor quantum wires

We demonstrate in theory that it is possible to all-electrically manipulate the RKKY interaction in a quasi-one-dimensional electron gas embedded in a semiconductor heterostructure, in the presence of Rashba and Dresselhaus spin-orbit interaction. In an undoped semiconductor quantum wire where intermediate excitations are gapped, the interaction becomes the short-ranged Bloembergen-Rowland super-exchange interaction. Owing to the interplay of different types of spin-orbit interaction, the interaction can be controlled to realize various spin models, e.g., isotropic and anisotropic Heisenberg-like models, Ising-like models with additional Dzyaloshinsky-Moriya terms, by tuning the external electric field and designing the crystallographic directions. Such controllable interaction forms a basis for quantum computing with localized spins and quantum matters in spin lattices.Comment: 5 pages, 1 figur

Interplay between s-d exchange interaction and Rashba effect: spin-polarized transport

We investigate the spin-polarized transport properties of a two-dimensional electron gas in a n-type diluted magnetic narrow gap semiconductor quantum well subjected to a perpendicular magnetic and electric field. Interesting beating patterns in the magneto resistance are found which can be tuned significantly by varying the electric field. A resonant enhancement of spin-polarized current is found which is induced by the competition between the s-d exchange interaction and the Rashba effect [Y. A. Bychkov and E. I. Rashba, J. Phys. C 17, 6039 (1984)].Comment: 4 pages, 3 figures, Appl. Phys. Lett. (in press

Quantum measurement characteristics of double-dot single electron transistor

Owing to a few unique advantages, double-dot single electron transistor has been proposed as an alternative detector for charge states. In this work, we present a further study for its signal-to-noise property, based on a full analysis of the setup configuration symmetry. It is found that the effectiveness of the double-dot detector can approach that of an ideal detector, if the symmetric capacitive coupling is taken into account. The quantum measurement efficiency is also analyzed, by comparing the measurement time with the measurement-induced dephasing time.Comment: 7 pages, 5 figure

AN EFFICIENT ITERATIVE DFT-BASED CHANNEL ESTIMATION FOR MIMO-OFDM SYSTEMS ON MULTIPATH CHANNELS

In this paper, an efficient iterative discrete Fourier transform (DFT) -based channel estimator with good performance for multiple-input and multiple-output orthogonal frequency division multiplexing (MIMO-OFDM) systems such as IEEE 802.11n which retain some sub-carriers as null sub-carriers (or virtual carriers) is proposed. In order to eliminate the mean-square error (MSE) floor effect existed in conventional DFT-based channel estimators, we proposed a low-complexity method to detect the significant channel impulse response (CIR) taps, which neither need any statistical channel information nor a predetermined threshold value. Analysis and simulation results show that the proposed method has much better performance than conventional DFT-based channel estimators and without MSE floor effect

Influence of lateral propagating modes on laser output characteristics in selectively oxidized vertical cavity surface-emitting lasers with double oxide layers

The influence of lateral propagating modes on the threshold current and the spontaneous emission factor in selectively oxidized vertical cavity surface-emitting lasers (VCSELs) is investigated based on the mode behaviors of lateral propagating modes and the rate equation model. The numerical results show that the lateral propagating modes may be trapped in the aperture region for the selectively oxidized VCSEL with two oxide layers, one above and one below the active region. The output characteristics of VCSELs can be affected due to the reabsorption of the quasitrapped lateral propagating modes. A lower threshold current can be expected for a VCSEL with double oxide layers than that with a single oxide layer. The numerical results of rate equations also show that a larger spontaneous emission factor can be obtained by fitting the output-input curves for the VCSEL with double oxide layers. (C) 1999 American Institute of Physics. [S0021-8979(99)07919-0]