Energy Calculations of The Realistic Quantum Slab

We calculated the total energy of a semiconductor quantum dot which is defined by the trench gate method. In our calculation we used a recently developed energy functional called ``orbital-free energy functional". We compared the total energies obtained by Thomas-Fermi approximation, orbital-free energy functional and standard local-density approximation for the square quantum slab geometry. We have seen that this newly developed energy functional is numerically very efficient, superior to the Thomas-Fermi approximation and is in good agreement with the local-density approximation for two different sizes of quantum dot systems.Comment: 8 pages, 4 figure

The effects of the intense laser field on bound states in Ga x In 1- x N y As 1- y N/GaAs single quantum well

We have investigated the effects of the intense laser field and nitrogen concentration on bound state energy levels in Ga x In 1- x N y As 1- y N/GaAs quantum well. The results show that both intense laser field and N-incorporation into the GaInNAs have strong influences on carrier localization. We hope that our results can stimulate further investigations of the related physics, as well as device applications of group-III nitrides. Copyright EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2011