Analysis of the Dispersion of Electrical Parameters and Characteristics of FinFET Devices, Journal of Telecommunications and Information Technology, 2009, nr 4

Extensive numerical simulations of FinFET structures have been carried out using commercial TCAD tools. A series of plasma etching steps has been simulated for different process conditions in order to evaluate the influence of plasma pressure, composition and powering on the FinFET topography. Next, the most important geometric parameters of the FinFETs have been varied and the electrical characteristics have been calculated in order to evaluate the sensitivity of the FinFET electrical parameters on possible FinFET structure variability

History of Semiconductors

The history of semiconductors is presented beginning with the first documented observation of a semiconductor effect (Faraday), through the development of the first devices (point-contact rectifiers and transistors, early field-effect transistors) and the theory of semiconductors up to the contemporary devices (SOI and multigate devices)

High - pressure metal - halogenide lamp with spectral distribution simulating daylight

W niniejszym artykule przedstawiono sprawozdanie z prac nad opracowaniem metodyki kształtowania widma emisyjnego lampy wyładowczej, wysokoprężnej metalohalogenkowej w oparciu o zmianę trzech parametrów, a mianowicie : - dobór napełnienia chemicznego jarznika lampy; - ustalenie optymalnych warunków wyładowania; - dobór materiałów tworzących konstrukcje lampy. W toku realizacji zadania udało się znacznie przybliżyć do optymalnego składu kombinacji metali tworzących napełnienie jarznika, zanalizować procesy zachodzące w łuku wyładowania istotnie wpływające na jego widmo emisyjne oraz określić właściwy rodzaj szkła balonu zewnętrznego lampy. Prace technologiczne, konstrukcyjne i pomiarowe wykonane w trakcie realizacji zadania doprowadziły do wykonania modelu lampy będącej symulatorem światła dziennego kategorii BC, o bardzo dobrym wskaźniku oddawania barw (Ra < 97).The paper presents a report on research work concerning developing methods of shoping the emission spectrum of high pressure metal halide discharge lamp based on variation of the following three parameters: - choice of chemical filling of the are tube , - establishing the optimum discharge conditions, and - choice of materials constituting the lamp structure. During completion of the task the present Authors succeded in obtaining a near optimum composition of metals which the filling of the are tube, in analysing processes occurring in the discharge arc which essentially affect the emission spectrum, as well as in determining the proper kind of the outer baloon glass of the lamp. Technological, design and metrological work carried out in the cours of the task realization lead to developing a model of a lamp simulating daylight of the BC category with a very high colour rendering index (Ra<97)

Modeling of the inverse base width modulation effect in HBT transistor with graded SiGe base

A model of the position of the edge of emitter-base junction in the base and collector current pre-exponential ideality factor in HBT transistor with a SiGe base is presented. The model is valid for transistors with nonuniform profiles of doping and Ge content. The importance of taking into account the dependence of the effective density of states in SiGe on local Ge content and that of electron diffusion coefficient in SiGe on drift field for modeling accuracy is studied

Silicon microelectronics: where we have come from and where we are heading

The paper briefly presents the history of microelectronics and the limitations of its further progress, as well as possible solutions. The discussion includes the consequences of the reduction of gate-stack capacitance and difficulties associated with supply-voltage scaling, minimization of parasitic resistance, increased channel doping and small size. Novel device architectures (e.g. SON, double-gate transistor) and the advantages of silicon-germanium are considered, too

Charge-pumping characterization of FILOX vertical MOSFETs

This paper presents for the first time the results of charge-pumping (CP) measurements of FILOX vertical transistors. The aim of these measurements is to provide information on the density of interface traps at the Si-SiO2 interface fabricated in a non-standard process. Flat-band and threshold voltage, as well as density of interface traps are determined. Good agreement between threshold-voltage values obtained from CP and I-V measurements is observed

Modeling SiGe-base HBT using APSYS 2000 - a 2D simulator

The paper is devoted to optimization of SiGe-base HBT with respect to operation speed by means of numerical simulation. The influence of design parameters on f(T) is studied

Arbitrary waveform generator for charge-pumping

The paper presents a new signal generator for charge-pumping. Modular structure of the generator is discussed with special emphasis on signal-generation module consisting of five independent signal channels. Digital signal synthesis is chosen to minimize inaccuracies. Noise analysis is performed to demonstrate the validity of the design of signal channel. Calibration procedure is also discussed

Innovative housing based light sources electroluminescent intended for the purpose phototherapy neonatal jaundice

W artykule przedstawiono proces opracowania modelu lampy do fototerapii hiperbilirubinemii noworodków na bazie innowacyjnych źródeł światła – diodach elektroluminescencyjnych świecących światłem niebieskim, w odpowiednim, do leczenia żółtaczki noworodków i niemowląt, zakresie widmowym.This article presents a process to develop a model lamp for the phototherapy of the neonatal hyperbilirubinemia. This lamp model is based on innovative sources of light – light-emitting diodes that emit a blue light, that is of an appropriate spectral range for the treatment of the newborn and infant jaundice

A model of partially-depleted SOI MOSFETs in the subthreshold range

A steady-state model of partially-depleted (PD) SOI MOSFETs I-V characteristics in subthreshold range is presented. Phenomena, which must be accounted for in current continuity equation, which is a key equation of the PD SOI MOSFETs model are summarized. A model of diffusion-based conduction in a weakly-inverted channel is described. This model takes into account channel length modulation, drift of carriers in the "pinch-off" region and avalanche multiplication triggered by these carriers. Characteristics of the presented model are shown and briefly discussed