On heat transfer at microscale with implications for microactuator design

The dominance of conduction and the negligible effect of gravity, and hence free convection, are verified in the case of microscale heat sources surrounded by air at atmospheric pressure. A list of temperature-dependent heat transfer coefficients is provided. In contrast to previous approaches based on free convection, supplied coefficients converge with increasing temperature. Instead of creating a new external function for the definition of boundary conditions via conductive heat transfer, convective thin film coefficients already embedded in commercial finite element software are utilized under a constant heat flux condition. This facilitates direct implementation of coefficients, i.e. the list supplied in this work can directly be plugged into commercial software. Finally, the following four-step methodology is proposed for modeling: (i) determination of the thermal time constant of a specific microactuator, (ii) determination of the boundary layer size corresponding to this time constant, (iii) extraction of the appropriate heat transfer coefficients from a list provided and (iv) application of these coefficients as boundary conditions in thermomechanical finite element simulations. An experimental procedure is established for the determination of the thermal time constant, the first step of the proposed methodology. Based on conduction, the proposed method provides a physically sound solution to heat transfer issues encountered in the modeling of thermal microactuators

Monolithic Integration of Silicon Nanowires With a Microgripper

Si nanowire (NW) stacks are fabricated by utilizing the scalloping effect of inductively coupled plasma deep reactive ion etching. When two etch windows are brought close enough, scallops from both sides will ideally meet along the dividing centerline of the windows turning the separating material column into an array of vertically stacked strings. Upon further thinning of these NW precursors by oxidation followed by oxide etching, Si NWs with diameters ranging from 50 nm to above 100 nm are obtained. The pattern of NWs is determined solely by photolithography. Various geometries ranging from T-junctions to circular coils are demonstrated in addition to straight NWs along specific crystallographic orientations. The number of NWs in a stack is determined by the number of etch cycles utilized. Due to the precise lithographic definition of NW location and orientation, the technique provides a convenient batch-compatible tool for the integration of NWs with MEMS. This aspect is demonstrated with a microgripper, where an electrostatic actuation mechanism is simultaneously fabricated with the accompanying NW endeffectors. Mechanical integrity of the NW–MEMS bond and the manipulation capability of the gripper are demonstrated. Overall, the proposed technique exhibits a batch-compatible approach to the issue of micronanointegration