RESOLVING THE BIAS POINT FOR WIDE RANGE OF TEMPERATURE APPLICATIONS IN HIGH-K/METAL GATE NANOSCALE DG-MOSFET

This article investigates the Zero-Temperature-Coefficient (ZTC) bias point and its associated performance metrics of a High-k Metal Gate (HKMG) DG-MOSFET in nanoscale. The ZTC bias point is defined as the point at which the device parameters are independent of temperature. The discussion includes sub threshold slope (SS), drain induced barrier lowering (DIBL), on-off current ratio (Ion/Ioff), transconductance (gm), output conductance (gd) and intrinsic gain (AV). From the results, it is confirmed that there are two different ZTC bias points, one for IDS (ZTCIDS) and the other for gm (ZTCgm). The points are obtained as: ZTCIDS=0.552 V and ZTCgm =0.410 V, which will open important opportunities in analog circuit design for wide range of temperature applications

ZTC BIAS POINT OF ADVANCED FIN BASED DEVICE: THE IMPORTANCE AND EXPLORATION

The present understanding of this work is about to evaluate and resolve the temperature compensation point (TCP) or zero temperature coefficient (ZTC) point for a sub-20 nm FinFET. The sensitivity of geometry parameters on assorted performances of Fin based device and its reliability over ample range of temperatures i.e. 25 0C to 225 0C is reviewed to extend the benchmark of device scalability. The impact of fin height (HFin), fin width (WFin), and temperature (T) on immense performance metrics including on-off ratio (Ion/Ioff), transconductance (gm), gain (AV), cut-off frequency (fT), static power dissipation (PD), energy (E), energy delay product (EDP), and sweet spot (gmfT/ID) of the FinFET is successfully carried out by commercially available TCAD simulator SentaurusTM from Synopsis Inc

Zero-temperature-coefficient biasing point of a fully-depleted SOI MOSFET

The gate characteristics (ID-VGS) of fully depleted, lightly doped, enhanced SOI n-MOSFET are simulated over a wide range of operating temperature (300-600 K) by using the SILVACO TCAD tools. Simulation results show that there exists a biasing point where the drain current and the transconductance are temperature independent. Such a point is known as the zero-temperature coefficient (ZTC) bias point. The drain-current ZTC points are identified in both the linear and saturation regions. The transconductance ZTC exists only in the saturation region