Fully CMOS Memristor Based Chaotic Circuit

This paper demonstrates the design of a fully CMOS chaotic circuit consisting of only DDCC based memristor and inductance simulator. Our design is composed of these active blocks using CMOS 0.18 µm process technology with symmetric ±1.25 V supply voltages. A new single DDCC+ based topology is used as the inductance simulator. Simulation results verify that the design proposed satisfies both memristor properties and the chaotic behavior of the circuit. Simulations performed illustrate the success of the proposed design for the realization of CMOS based chaotic applications

The Fourth Element: Characteristics, Modelling, and Electromagnetic Theory of the Memristor

In 2008, researchers at HP Labs published a paper in {\it Nature} reporting the realisation of a new basic circuit element that completes the missing link between charge and flux-linkage, which was postulated by Leon Chua in 1971. The HP memristor is based on a nanometer scale TiO$_2$ thin-film, containing a doped region and an undoped region. Further to proposed applications of memristors in artificial biological systems and nonvolatile RAM (NVRAM), they also enable reconfigurable nanoelectronics. Moreover, memristors provide new paradigms in application specific integrated circuits (ASICs) and field programmable gate arrays (FPGAs). A significant reduction in area with an unprecedented memory capacity and device density are the potential advantages of memristors for Integrated Circuits (ICs). This work reviews the memristor and provides mathematical and SPICE models for memristors. Insight into the memristor device is given via recalling the quasi-static expansion of Maxwell's equations. We also review Chua's arguments based on electromagnetic theory.Comment: 28 pages, 14 figures, Accepted as a regular paper - the Proceedings of Royal Society

A locally active discrete memristor model and its application in a hyperchaotic map

© 2022 Springer Nature Switzerland AG. Part of Springer Nature. This is the accepted manuscript version of an article which has been published in final form at https://doi.org/10.1007/s11071-021-07132-5The continuous memristor is a popular topic of research in recent years, however, there is rare discussion about the discrete memristor model, especially the locally active discrete memristor model. This paper proposes a locally active discrete memristor model for the first time and proves the three fingerprints characteristics of this model according to the definition of generalized memristor. A novel hyperchaotic map is constructed by coupling the discrete memristor with a two-dimensional generalized square map. The dynamical behaviors are analyzed with attractor phase diagram, bifurcation diagram, Lyapunov exponent spectrum, and dynamic behavior distribution diagram. Numerical simulation analysis shows that there is significant improvement in the hyperchaotic area, the quasi-periodic area and the chaotic complexity of the two-dimensional map when applying the locally active discrete memristor. In addition, antimonotonicity and transient chaos behaviors of system are reported. In particular, the coexisting attractors can be observed in this discrete memristive system, resulting from the different initial values of the memristor. Results of theoretical analysis are well verified with hardware experimental measurements. This paper lays a great foundation for future analysis and engineering application of the discrete memristor and relevant the study of other hyperchaotic maps.Peer reviewedFinal Accepted Versio