Unique Thermal Properties of Clothing Materials.

Cloth wearing seems so natural that everyone is self-deemed knowledgeable and has some expert opinions about it. However, to clearly explain the physics involved, and hence to make predictions for clothing design or selection, it turns out to be quite challenging even for experts. Cloth is a multiphased, porous, and anisotropic material system and usually in multilayers. The human body acts as an internal heat source in a clothing situation, thus forming a temperature gradient between body and ambient. But unlike ordinary engineering heat transfer problems, the sign of this gradient often changes as the ambient temperature varies. The human body also perspires and the sweat evaporates, an effective body cooling process via phase change. To bring all the variables into analysis quickly escalates into a formidable task. This work attempts to unravel the problem from a physics perspective, focusing on a few rarely noticed yet critically important mechanisms involved so as to offer a clearer and more accurate depiction of the principles in clothing thermal comfort

Are there hyperentropic objects ?

By treating the Hawking radiation as a system in thermal equilibrium, Marolf and R. Sorkin have argued that hyperentropic objects (those violating the entropy bounds) would be emitted profusely with the radiation, thus opening a loophole in black hole based arguments for such entropy bounds. We demonstrate, on kinetic grounds, that hyperentropic objects could only be formed extremely slowly, and so would be rare in the Hawking radiance, thus contributing negligibly to its entropy. The arguments based on the generalized second law of thermodynamics then rule out weakly self-gravitating hyperentropic objects and a class of strongly self-gravitating ones.Comment: LaTeX, 4 page

Effect of magnetic field on the charge and thermal transport properties of hot and dense QCD matter

We have studied the effect of strong magnetic field on the charge and thermal transport properties of hot QCD matter at finite chemical potential. For this purpose, we have calculated the electrical ($\sigma_{\rm el}$) and thermal ($\kappa$) conductivities using kinetic theory in the relaxation time approximation, where the interactions are subsumed through the distribution functions within the quasiparticle model at finite temperature, strong magnetic field and finite chemical potential. This study helps to understand the impacts of strong magnetic field and chemical potential on the local equilibrium by the Knudsen number ($\Omega$) through $\kappa$ and on the relative behavior between thermal conductivity and electrical conductivity through the Lorenz number ($L$) in the Wiedemann-Franz law. We have observed that, both $\sigma_{\rm el}$ and $\kappa$ get increased in the presence of strong magnetic field, and the additional presence of chemical potential further increases their magnitudes, where $\sigma_{\rm el}$ shows decreasing trend with the temperature, opposite to its increasing behavior in the isotropic medium, whereas $\kappa$ increases slowly with the temperature, contrary to its fast increase in the isotropic medium. The variation in $\kappa$ explains the decrease of the Knudsen number with the increase of the temperature. However, in the presence of strong magnetic field and finite chemical potential, $\Omega$ gets enhanced and approaches unity, thus, the system may move slightly away from the equilibrium state. The Lorenz number ($\kappa/(\sigma_{\rm el} T))$ in the abovementioned regime of strong magnetic field and finite chemical potential shows linear enhancement with the temperature and has smaller magnitude than the isotropic one, thus, it describes the violation of the Wiedemann-Franz law for the hot and dense QCD matter in the presence of a strong magnetic field.Comment: 29 pages, 6 figure

Asymmetrically Encapsulated vertical ITO/MoS2/Cu2O photodetector with ultra-high sensitivity

Strong light absorption, coupled with moderate carrier transport properties, makes two-dimensional (2-D) layered transition metal dichalcogenide (TMD) semiconductors promising candidates for low intensity photodetection applications. However, the performance of these devices is severely bottlenecked by slow response with persistent photocurrent due to long lived charge trapping, and nonreliable characteristics due to undesirable ambience and substrate effects. Here we demonstrate ultra-high specific detectivity (D*) of 3.2x10^14 Jones and responsivity (R) of 5.77x10^4 AW-1 at an optical power density (P_op) of 0.26 Wm-2 and external bias (V_ext) of -0.5 V in an indium tin oxide (ITO)/MoS2/copper oxide (Cu2O)/Au vertical multi-heterojunction photodetector exhibiting small carrier transit time. The active MoS2 layer being encapsulated by carrier collection layers allows us to achieve negligible trap assisted persistent photocurrent and repeatable characteristics over large number of cycles. We also achieved a large D*>10^14 Jones at zero external bias due to the built-in field of the asymmetric photodetector. Benchmarking the performance against existing reports in literature shows a pathway for achieving reliable and highly sensitive photodetectors for ultra-low intensity photodetection applications.Comment: Accepted in Small, Wile

Self-Powered, Highly Sensitive, High Speed Photodetection Using ITO/WSe2/SnSe2 Vertical Heterojunction

Two dimensional transition metal di-chalcogenides (TMDCs) are promising candidates for ultra-low intensity photodetection. However, the performance of these photodetectors is usually limited by ambience induced rapid performance degradation and long lived charge trapping induced slow response with a large persistent photocurrent when the light source is switched off. Here we demonstrate an indium tin oxide (ITO)/WSe$_2$/SnSe$_2$ based vertical double heterojunction photoconductive device where the photo-excited hole is confined in the double barrier quantum well, whereas the photo-excited electron can be transferred to either the ITO or the SnSe$_2$ layer in a controlled manner. The intrinsically short transit time of the photoelectrons in the vertical double heterojunction helps us to achieve high responsivity in excess of $1100$ A/W and fast transient response time on the order of $10$ $\mu$s. A large built-in field in the WSe$_2$ sandwich layer results in photodetection at zero external bias allowing a self-powered operation mode. The encapsulation from top and bottom protects the photo-active WSe$_2$ layer from ambience induced detrimental effects and substrate induced trapping effects helping us to achieve repeatable characteristics over many cycles