561 research outputs found
Capacity, Fidelity, and Noise Tolerance of Associative Spatial-Temporal Memories Based on Memristive Neuromorphic Network
We have calculated the key characteristics of associative
(content-addressable) spatial-temporal memories based on neuromorphic networks
with restricted connectivity - "CrossNets". Such networks may be naturally
implemented in nanoelectronic hardware using hybrid CMOS/memristor circuits,
which may feature extremely high energy efficiency, approaching that of
biological cortical circuits, at much higher operation speed. Our numerical
simulations, in some cases confirmed by analytical calculations, have shown
that the characteristics depend substantially on the method of information
recording into the memory. Of the four methods we have explored, two look
especially promising - one based on the quadratic programming, and the other
one being a specific discrete version of the gradient descent. The latter
method provides a slightly lower memory capacity (at the same fidelity) then
the former one, but it allows local recording, which may be more readily
implemented in nanoelectronic hardware. Most importantly, at the synchronous
retrieval, both methods provide a capacity higher than that of the well-known
Ternary Content-Addressable Memories with the same number of nonvolatile memory
cells (e.g., memristors), though the input noise immunity of the CrossNet
memories is somewhat lower
Molecular dynamics simulations of oxide memory resistors (memristors)
Reversible bipolar nano-switches that can be set and read electronically in a
solid-state two-terminal device are very promising for applications. We have
performed molecular-dynamics simulations that mimic systems with oxygen
vacancies interacting via realistic potentials and driven by an external bias
voltage. The competing short- and long-range interactions among charged mobile
vacancies lead to density fluctuations and short-range ordering, while
illustrating some aspects of observed experimental behavior, such as memristor
polarity inversion.Comment: 15 pages, 5 figure
A Compact CMOS Memristor Emulator Circuit and its Applications
Conceptual memristors have recently gathered wider interest due to their
diverse application in non-von Neumann computing, machine learning,
neuromorphic computing, and chaotic circuits. We introduce a compact CMOS
circuit that emulates idealized memristor characteristics and can bridge the
gap between concepts to chip-scale realization by transcending device
challenges. The CMOS memristor circuit embodies a two-terminal variable
resistor whose resistance is controlled by the voltage applied across its
terminals. The memristor 'state' is held in a capacitor that controls the
resistor value. This work presents the design and simulation of the memristor
emulation circuit, and applies it to a memcomputing application of maze solving
using analog parallelism. Furthermore, the memristor emulator circuit can be
designed and fabricated using standard commercial CMOS technologies and opens
doors to interesting applications in neuromorphic and machine learning
circuits.Comment: Submitted to International Symposium of Circuits and Systems (ISCAS)
201
Chaotic memristor
We suggest and experimentally demonstrate a chaotic memory resistor
(memristor). The core of our approach is to use a resistive system whose
equations of motion for its internal state variables are similar to those
describing a particle in a multi-well potential. Using a memristor emulator,
the chaotic memristor is realized and its chaotic properties are measured. A
Poincar\'{e} plot showing chaos is presented for a simple nonautonomous circuit
involving only a voltage source directly connected in series to a memristor and
a standard resistor. We also explore theoretically some details of this system,
plotting the attractor and calculating Lyapunov exponents. The multi-well
potential used resembles that of many nanoscale memristive devices, suggesting
the possibility of chaotic dynamics in other existing memristive systems.Comment: Applied Physics A (in press
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