Multiple Antenna Techniques for Terahertz Nano-Bio Communication

Using higher frequency bands becomes an essential demand resulting from the explosive wireless traffic needs and the spectrum shortage of the currently used bands. This paper presents an overview on the terahertz technology and its application in the area of multi-input multi-output antenna system and in-vivo nano-communication. In addition, it presents a preliminary study on applying multiple input-single output (MISO) antenna technique to investigate the signal propagation and antenna diversity techniques inside the human skin tissues, which is represented by three layers: stratum corneum (SC), epidermis, and dermis layers, in the terahertz (THz) frequency range (0.8-1.2) THz. The spatial antenna diversity is investigated in this study to understand MISO system performance for two different in-vivo channels resulting from the signal propagation between two transmitting antennas, located at the dermis layer, and one receiving antenna, located at epidermis layer. Three techniques are investigated: selection combining (SC), equal-gain combing (EGC), and maximum-ratio combining (MRC). The initial study indicates that using multiple antenna technique with THz might be not useful for in-vivo nano-communication

A Holistic Investigation on Terahertz Propagation and Channel Modeling Toward Vertical Heterogeneous Networks

User-centric and low latency communications can be enabled not only by small cells but also through ubiquitous connectivity. Recently, the vertical heterogeneous network (V-HetNet) architecture is proposed to backhaul/fronthaul a large number of small cells. Like an orchestra, the V-HetNet is a polyphony of different communication ensembles, including geostationary orbit (GEO), and low-earth orbit (LEO) satellites (e.g., CubeSats), and networked flying platforms (NFPs) along with terrestrial communication links. In this study, we propose the Terahertz (THz) communications to enable the elements of V-HetNets to function in harmony. As THz links offer a large bandwidth, leading to ultra-high data rates, it is suitable for backhauling and fronthauling small cells. Furthermore, THz communications can support numerous applications from inter-satellite links to in-vivo nanonetworks. However, to savor this harmony, we need accurate channel models. In this paper, the insights obtained through our measurement campaigns are highlighted, to reveal the true potential of THz communications in V-HetNets.Comment: It has been accepted for the publication in IEEE Communications Magazin

Plasmonic behavior of III-V semiconductors in far-infrared and terahertz range

Background: In this article, III-V semiconductors are proposed as materials for far-infrared and terahertz plasmonic applications. We suggest criteria to estimate appropriate spectral range for each material including tuning by fine doping and magnetic field. Methods: Several single-crystal wafer samples (n, p-doped GaAs, n-doped InP, and n, p-doped and undoped InSb) are characterized using reflectivity measurement and their optical properties are described using the Drude-Lorentz model, including magneto-optical anisotropy. Results: The optical parameters of III-V semiconductors are presented. Moreover, strong magnetic modulation of permittivity was demonstrated on the undoped InSb crystal wafer in the terahertz spectral range. Description of this effect is presented and the obtained parameters are compared with a Hall effect measurement. Conclusion: Analyzing the phonon/free carrier contribution to the permittivity of the samples shows their possible use as plasmonic materials; the surface plasmon properties of semiconductors in the THz range resemble those of noble metals in the visible and near infrared range and their properties are tunable by either doping or magnetic field.Web of Science13art. no. 1

Ultrafast nonlinear optical response of Dirac fermions in graphene

The speed of solid-state electronic devices, determined by the temporal dynamics of charge carriers, could potentially reach unprecedented petahertz frequencies through direct manipulation by optical fields, consisting in a million-fold increase from state-of-the-art technology. In graphene, charge carrier manipulation is facilitated by exceptionally strong coupling to optical fields, from which stems an important back-action of photoexcited carriers. Here we investigate the instantaneous response of graphene to ultrafast optical fields, elucidating the role of hot carriers on sub-100 fs timescales. The measured nonlinear response and its dependence on interaction time and field polarization reveal the back-action of hot carriers over timescales commensurate with the optical field. An intuitive picture is given for the carrier trajectories in response to the optical-field polarization state. We note that the peculiar interplay between optical fields and charge carriers in graphene may also apply to surface states in topological insulators with similar Dirac cone dispersion relations.Peer ReviewedPostprint (published version

Self-mixing model of terahertz rectification in a metal oxide semiconductor capacitance

Metal oxide semiconductor (MOS) capacitance within field effect transistors are of great interest in terahertz (THz) imaging, as they permit high-sensitivity, high-resolution detection of chemical species and images using integrated circuit technology. High-frequency detection based on MOS technology has long been justified using a mechanism described by the plasma wave detection theory. The present study introduces a new interpretation of this effect based on the self-mixing process that occurs in the field effect depletion region, rather than that within the channel of the transistor. The proposed model formulates the THz modulation mechanisms of the charge in the potential barrier below the oxide based on the hydrodynamic semiconductor equations solved for the small-signal approximation. This approach explains the occurrence of the self-mixing process, the detection capability of the structure and, in particular, its frequency dependence. The dependence of the rectified voltage on the bias gate voltage, substrate doping, and frequency is derived, offering a new explanation for several previous experimental results. Harmonic balance simulations are presented and compared with the model results, fully validating the model’s implementation. Thus, the proposed model substantially improves the current understanding of THz rectification in semiconductors and provides new tools for the design of detectors

All CVD Boron Nitride Encapsulated Graphene FETs with CMOS Compatible Metal Edge Contacts

We report on the fabrication and characterization of field effect transistors (FETs) based on chemical vapor deposited (CVD) graphene encapsulated between few layer CVD boron nitride (BN) sheets with complementary metal oxide semiconductor (CMOS) compatible nickel edge contacts. Non-contact Tera-hertz time domain spectroscopy (THz-TDS) of large-area BN/graphene/BN (BN/G/BN) stacks reveals average sheet conductivity >1 mS/sq and average mobility of 2500 cm$^{2}$/Vs. Improved output conductance is observed in direct current (DC) measurements under ambient conditions, indicating potential for radio-frequency (RF) applications. Moreover, we report a maximum voltage gain of 6 dB from a low frequency signal amplifier circuit. RF characterization of the GFETs yields an f$_{T}$ x L$_{g}$ product of 2.64 GHz$\mu$m and an f$_{Max}$ x L$_{g}$ product of 5.88 GHz$\mu$m. This study presents for the first time THz-TDS usage in combination with other characterization methods for device performance assessment on BN/G/BN stacks. The results serve as a step towards scalable, all CVD 2D material-based FETs for CMOS compatible future nanoelectronic circuit architectures.Comment: 6 page