Helium Ion Microscopy

Helium Ion Microcopy (HIM) based on Gas Field Ion Sources (GFIS) represents a new ultra high resolution microscopy and nano-fabrication technique. It is an enabling technology that not only provides imagery of conducting as well as uncoated insulating nano-structures but also allows to create these features. The latter can be achieved using resists or material removal due to sputtering. The close to free-form sculpting of structures over several length scales has been made possible by the extension of the method to other gases such as Neon. A brief introduction of the underlying physics as well as a broad review of the applicability of the method is presented in this review.Comment: Revised versio

Scanning tunneling microscopy and spectroscopy at low temperatures of the (110) surface of Te doped GaAs single crystals

We have performed voltage dependent imaging and spatially resolved spectroscopy on the (110) surface of Te doped GaAs single crystals with a low temperature scanning tunneling microscope (STM). A large fraction of the observed defects are identified as Te dopant atoms which can be observed down to the fifth subsurface layer. For negative sample voltages, the dopant atoms are surrounded by Friedel charge density oscillations. Spatially resolved spectroscopy above the dopant atoms and above defect free areas of the GaAs (110) surface reveals the presence of conductance peaks inside the semiconductor band gap. The appearance of the peaks can be linked to charges residing on states which are localized within the tunnel junction area. We show that these localized states can be present on the doped GaAs surface as well as at the STM tip apex.Comment: 8 pages, 8 figures, accepted for publication in PR

Visualization of steps and surface reconstructions in Helium Ion Microscopy with atomic precision

Helium Ion Microscopy is known for its surface sensitivity and high lateral resolution. Here, we present results of a Helium Ion Microscopy based investigation of a surface confined alloy of Ag on Pt(111). Based on a change of the work function of 25\,meV across the atomically flat terraces we can distinguish Pt rich from Pt poor areas and visualize the single atomic layer high steps between the terraces. Furthermore, dechanneling contrast has been utilized to measure the periodicity of the hcp/fcc pattern formed in the 2--3 layers thick Ag/Pt alloy film. A periodicity of 6.65\,nm along the $\langle\overline{11}2\rangle$ surface direction has been measured. In terms of crystallography a hcp domain is obtained through a lateral displacement of a part of the outermost layer by $1/\sqrt{3}$ of a nearest neighbour spacing along $\langle\overline{11}2\rangle$. This periodicity is measured with atomic precision: coincidence between the Ag and the Pt lattices is observed for 23 Ag atoms on 24 Pt atoms. The findings are perfectly in line with results obtained with Low Energy Electron Microscopy and Phase Contrast Atomic Force Microscopy.Comment: 15 pages, 7 figure

Solid immersion lens applications for nanophotonic devices

Solid immersion lens (SIL) microscopy combines the advantages of conventional microscopy with those of near-field techniques, and is being increasingly adopted across a diverse range of technologies and applications. A comprehensive overview of the state-of-the-art in this rapidly expanding subject is therefore increasingly relevant. Important benefits are enabled by SIL-focusing, including an improved lateral and axial spatial profiling resolution when a SIL is used in laser-scanning microscopy or excitation, and an improved collection efficiency when a SIL is used in a light-collection mode, for example in fluorescence micro-spectroscopy. These advantages arise from the increase in numerical aperture (NA) that is provided by a SIL. Other SIL-enhanced improvements, for example spherical-aberration-free sub-surface imaging, are a fundamental consequence of the aplanatic imaging condition that results from the spherical geometry of the SIL. Beginning with an introduction to the theory of SIL imaging, the unique properties of SILs are exposed to provide advantages in applications involving the interrogation of photonic and electronic nanostructures. Such applications range from the sub-surface examination of the complex three-dimensional microstructures fabricated in silicon integrated circuits, to quantum photoluminescence and transmission measurements in semiconductor quantum dot nanostructures

Advanced Focused Beam-Induced Processing for Nanoscale Synthesis and 2D Materials Device Architectures

Nanofabrication has come to prominence over recent years due to miniaturization of electronic devices as well as interesting physical phenomena that arise in material systems at the nanoscale. Particle beam induced processing enables additive as well as subtractive nanoprocessing techniques. Focused beam induced processing facilitates direct-write processing, thus making it a common technique for fabrication and synthesis on the nanoscale and is typically carried out with charged particles such as electrons or ion species, each of which offer distinct capabilities. This dissertation addresses several challenges which currently plague the focused beam-induced processing community and explores novel applications.Chapter I explores laser based purification strategies for electron beam induced deposition. This addresses the challenge of material purity, which currently limits broader application of the nanofabrication technique. Chapter II covers advanced helium ion beam induced processing using a Gas Field Ionization source. This chapter explores novel applications for the helium ion beam as well as the mitigation of helium-induced subsurface damage, which currently prevents ubiquitous adoption of the helium ion microscope as a nanofabrication tool. Chapter III studies defect introduction in 2D materials under helium ion irradiation, which proves to be an ideal nanoprocessing application for the helium ion beam

Unlocking new contrast in a scanning helium microscope.

Delicate structures (such as biological samples, organic films for polymer electronics and adsorbate layers) suffer degradation under the energetic probes of traditional microscopies. Furthermore, the charged nature of these probes presents difficulties when imaging with electric or magnetic fields, or for insulating materials where the addition of a conductive coating is not desirable. Scanning helium microscopy is able to image such structures completely non-destructively by taking advantage of a neutral helium beam as a chemically, electrically and magnetically inert probe of the sample surface. Here we present scanning helium micrographs demonstrating image contrast arising from a range of mechanisms including, for the first time, chemical contrast observed from a series of metal-semiconductor interfaces. The ability of scanning helium microscopy to distinguish between materials without the risk of damage makes it ideal for investigating a wide range of systems.This research was supported under the Australian Research Councils Discovery Projects (Project No. DP08831308) funding scheme. Postgraduate research scholarships (M.B., A.F.) from the University of Newcastle gratefully acknowledged. We thank the Newcastle and Cavendish workshops, Donald MacLaren and Kane O’Donnell for technical support, insightful discussions and assistance. This work was performed in part at both the Materials and ACT nodes of the Australian National Fabrication Facility, which is a company established under the National Collaborative Research Infrastructure Strategy to provide nano- and micro-fabrication facilities for Australia’s researchers.This is the final version of the article. It was first available from NPG via http://dx.doi.org/10.1038/ncomms1018

Focused helium and neon ion beam induced etching for advanced extreme ultraviolet lithography mask repair

The gas field ion microscope was used to investigate helium and neon ion beam induced etching of nickel as a candidate technique for extreme ultraviolet (EUV) lithography mask editing. No discernable nickel etching was observed for room temperature helium exposures at 16 and 30 keV in the dose range of 1 x 10(15)-1 x 10(18) He+/cm(2); however, transmission electron microscopy (TEM) revealed subsurface damage to the underlying Mo-Si multilayer EUV mirror. Subsequently, neon beam induced etching at 30 keV was investigated over a similar dose range and successfully removed the entire 50 nm nickel top absorber film at a dose of similar to 3 x 10(17) Ne+/cm(2). Similarly, TEM revealed subsurface damage in the underlying Mo-Si multilayer. To further understand the helium and neon damage, the authors simulated the ion-solid interactions with our EnvizION Monte-Carlo model, which reasonably correlated the observed damage and bubble formation to the nuclear energy loss and the implanted inert gas concentration, respectively. A critical nuclear energy density loss of similar to 80 eV/nm(3) and critical implant concentration of similar to 2.5 x 10(20) atoms/cm(3) have been estimated for damage generation in the multilayer structure. (C) 2014 American Vacuum Society

Contactless visible light probing for nanoscale ICs through 10 μm bulk silicon

This paper explains why only optical techniques will be able to provide debug and diagnosis of bulk silicon FinFET technologies. In order to apply optical techniques through a convenient thickness of silicon on the one hand, light is limited to NIR to minimize absorption. To match resolution requirements on the other hand, it becomes mandatory to use shorter wavelengths. Two key issues have to be addressed: First, the penetration depth of visible light is only a few μm. This challenges device preparation and integrity. Our approach makes use of confocal microscopy suppressing back surface reflection and thus relaxing the preparation requirements to around 10 μm. Second, only solid immersion lenses (SIL) enable nanoscale resolution. But instead of silicon, materials transparent to visible light and providing a high refractive index are necessary. Our concept is based on 658 nm/633 nm laser and supports GaP as SIL material. We demonstrate the power of confocal imaging and prove contactless probing through a device thickness of 10 μm. We discuss how confocal optics relax the thickness requirements for visible light imaging and probing and we layout the concept for a GaP SIL. This concept opens the path to the design of nanoscale visible light debug and diagnosis