Carrier-controlled ferromagnetism in SrTiO3

Magnetotransport and superconducting properties are investigated for uniformly La-doped SrTiO3 films and GdTiO3/SrTiO3 heterostructures, respectively. GdTiO3/SrTiO3 interfaces exhibit a high-density two-dimensional electron gas on the SrTiO3-side of the interface, while for the SrTiO3 films carriers are provided by the dopant atoms. Both types of samples exhibit ferromagnetism at low temperatures, as evidenced by a hysteresis in the magnetoresistance. For the uniformly doped SrTiO3 films, the Curie temperature is found to increase with doping and to coexist with superconductivity for carrier concentrations on the high-density side of the superconducting dome. The Curie temperature of the GdTiO3/SrTiO3 heterostructures scales with the thickness of the SrTiO3 quantum well. The results are used to construct a stability diagram for the ferromagnetic and superconducting phases of SrTiO3.Comment: Revised version that is closer to the published version; Fig. 2 correcte

d0 Ferromagnetic Interface Between Non-magnetic Perovskites

We use computational and experimental methods to study d0 ferromagnetism at a charge- imbalanced interface between two perovskites. In SrTiO3/KTaO3 superlattice calculations, the charge imbalance introduces holes in the SrTiO3 layer, inducing a d0 ferromagnetic half-metallic 2D electron gas at the interface oxygen 2p orbitals. The charge imbalance overrides doping by vacancies at realistic concentrations. Varying the constituent materials shows ferromagnetism to be a gen- eral property of hole-type d0 perovskite interfaces. Atomically sharp epitaxial d0 SrTiO3/KTaO3, SrTiO3 /KNbO3 and SrTiO3 /NaNbO3 interfaces are found to exhibit ferromagnetic hysteresis at room temperature. We suggest the behavior is due to high density of states and exchange coupling at the oxygen t1g band in comparison with the more studied d band t2g symmetry electron gas.Comment: 5 pages, 5 figure

Tailoring a two-dimensional electron gas at the LaAlO3/SrTiO3 (001) interface by epitaxial strain

Recently a metallic state was discovered at the interface between insulating oxides, most notably LaAlO3 and SrTiO3. Properties of this two-dimensional electron gas (2DEG) have attracted significant interest due to its potential applications in nanoelectronics. Control over this carrier density and mobility of the 2DEG is essential for applications of these novel systems, and may be achieved by epitaxial strain. However, despite the rich nature of strain effects on oxide materials properties, such as ferroelectricity, magnetism, and superconductivity, the relationship between the strain and electrical properties of the 2DEG at the LaAlO3/SrTiO3 heterointerface remains largely unexplored. Here, we use different lattice constant single crystal substrates to produce LaAlO3/SrTiO3 interfaces with controlled levels of biaxial epitaxial strain. We have found that tensile strained SrTiO3 destroys the conducting 2DEG, while compressively strained SrTiO3 retains the 2DEG, but with a carrier concentration reduced in comparison to the unstrained LaAlO3/SrTiO3 interface. We have also found that the critical LaAlO3 overlayer thickness for 2DEG formation increases with SrTiO3 compressive strain. Our first-principles calculations suggest that a strain-induced electric polarization in the SrTiO3 layer is responsible for this behavior. It is directed away from the interface and hence creates a negative polarization charge opposing that of the polar LaAlO3 layer. This both increases the critical thickness of the LaAlO3 layer, and reduces carrier concentration above the critical thickness, in agreement with our experimental results. Our findings suggest that epitaxial strain can be used to tailor 2DEGs properties of the LaAlO3/SrTiO3 heterointerface

Interface-induced magnetism in perovskite quantum wells

We investigate the angular dependence of the magnetoresistance of thin (< 1 nm), metallic SrTiO3 quantum wells epitaxially embedded in insulating, ferrimagnetic GdTiO3 and insulating, antiferromagnetic SmTiO3, respectively. The SrTiO3 quantum wells contain a high density of mobile electrons (~7x10^14 cm^-2). We show that the longitudinal and transverse magnetoresistance in the structures with GdTiO3 are consistent with anisotropic magnetoresistance, and thus indicative of induced ferromagnetism in the SrTiO3, rather than a nonequilibrium proximity effect. Comparison with the structures with antiferromagnetic SmTiO3 shows that the properties of thin SrTiO3 quantum wells can be tuned to obtain magnetic states that do not exist in the bulk material.Comment: Accepted for publication as a Rapid Communication in Physical Review

Persistent Optically Induced Magnetism in Oxygen-Deficient Strontium Titanate

Strontium titanate (SrTiO$_3$) is a foundational material in the emerging field of complex oxide electronics. While its electronic and optical properties have been studied for decades, SrTiO$_3$ has recently become a renewed materials research focus catalyzed in part by the discovery of magnetism and superconductivity at interfaces between SrTiO$_3$ and other oxides. The formation and distribution of oxygen vacancies may play an essential but as-yet-incompletely understood role in these effects. Moreover, recent signatures of magnetization in gated SrTiO$_3$ have further galvanized interest in the emergent properties of this nominally nonmagnetic material. Here we observe an optically induced and persistent magnetization in oxygen-deficient SrTiO$_{3-\delta}$ using magnetic circular dichroism (MCD) spectroscopy and SQUID magnetometry. This zero-field magnetization appears below ~18K, persists for hours below 10K, and is tunable via the polarization and wavelength of sub-bandgap (400-500nm) light. These effects occur only in oxygen-deficient samples, revealing the detailed interplay between magnetism, lattice defects, and light in an archetypal oxide material.Comment: 10 pages tota

Magnetocrystalline anisotropy of Fe and Co slabs and clusters on SrTiO_3\_3 by first-principles

In this work, we present a detailed theoretical investigation of the electronic and magnetic properties of ferromagnetic slabs and clusters deposited on SrTiO$\_3$ via first-principles, with a particular emphasis on the magneto-crystalline anisotropy (MCA). We found that in the case of Fe films deposited on SrTiO$\_3$ the effect of the interface is to quench the MCA whereas for Cobalt we observe a change of sign of the MCA from in-plane to out-of-plane as compared to the free surface. We also find a strong enhancement of MCA for small clusters upon deposition on a SrTiO$\_3$ substrate. The hybridization between the substrate and the $d$-orbitals of the cluster extending in-plane for Fe and out-of-plane for Co is at the origin of this enhancement of MCA. As a consequence, we predict that the Fe nanocrystals (even rather small) should be magnetically stable and are thus good potential candidates for magnetic storage devices.Comment: Physical ReviewB, 201

Long-range electronic reconstruction to a dxz,yzd_{xz,yz}-dominated Fermi surface below the LaAlO3_3/SrTiO3_3 interface

Low dimensionality, broken symmetry and easily-modulated carrier concentrations provoke novel electronic phase emergence at oxide interfaces. However, the spatial extent of such reconstructions - i.e. the interfacial "depth" - remains unclear. Examining LaAlO$_3$/SrTiO$_3$ heterostructures at previously unexplored carrier densities $n_{2D}\geq6.9\times10^{14}$ cm$^{-2}$, we observe a Shubnikov-de Haas effect for small in-plane fields, characteristic of an anisotropic 3D Fermi surface with preferential $d_{xz,yz}$ orbital occupancy extending over at least 100~nm perpendicular to the interface. Quantum oscillations from the 3D Fermi surface of bulk doped SrTiO$_3$ emerge simultaneously at higher $n_{2D}$. We distinguish three areas in doped perovskite heterostructures: narrow ($<20$ nm) 2D interfaces housing superconductivity and/or other emergent phases, electronically isotropic regions far ($>120$ nm) from the interface and new intermediate zones where interfacial proximity renormalises the electronic structure relative to the bulk.Comment: Supplementary material available at Scientific Reports websit