Mass Loss Due to Sputtering and Thermal Processes in Meteoroid Ablation

Conventional meteoroid theory assumes that the dominant mode of ablation is by evaporation following intense heating during atmospheric flight. In this paper we consider the question of whether sputtering may provide an alternative disintegration process of some importance.For meteoroids in the mass range from 10^-3 to 10^-13 kg and covering a meteor velocity range from 11 to 71 km/s, we numerically modeled both thermal ablation and sputtering ablation during atmospheric flight. We considered three meteoroid models believed to be representative of asteroidal (3300 kg m^-3 mass density), cometary (1000 kg m^-3) and porous cometary (300 kg m^-3) meteoroid structures. Atmospheric profiles which considered the molecular compositions at different heights were used in the sputtering calculations. We find that while in many cases (particularly at low velocities and for relatively large meteoroid masses) sputtering contributes only a small amount of mass loss during atmospheric flight, in some cases sputtering is very important. For example, a 10^-10 kg porous meteoroid at 40 km/s will lose nearly 51% of its mass by sputtering, while a 10^-13 kg asteroidal meteoroid at 60 km/s will lose nearly 83% of its mass by sputtering. We argue that sputtering may explain the light production observed at very great heights in some Leonid meteors. The impact of this work will be most dramatic for very small meteoroids such as those observed with large aperture radars.Comment: in pdf form, 48 pgs incl figures and table

Method for sequentially processing a multi-level interconnect circuit in a vacuum chamber

An apparatus is disclosed which includes a vacuum system having a vacuum chamber in which wafers are processed on rotating turntables. The vacuum chamber is provided with an RF sputtering system and a dc magnetron sputtering system. A gas inlet introduces various gases to the vacuum chamber and creates various gas plasma during the sputtering steps. The rotating turntables insure that the respective wafers are present under the sputtering guns for an average amount of time such that consistency in sputtering and deposition is achieved. By continuous and sequential processing of the wafers in a common vacuum chamber without removal, the adverse affects of exposure to atmospheric conditions are eliminated providing higher quality circuit contacts and functional device

The role of antiphase boundaries during ion sputtering and solid phase epitaxy of Si(001)

The Si(001) surface morphology during ion sputtering at elevated temperatures and solid phase epitaxy following ion sputtering at room temperature has been investigated using scanning tunneling microscopy. Two types of antiphase boundaries form on Si(001) surfaces during ion sputtering and solid phase epitaxy. One type of antiphase boundary, the AP2 antiphase boundary, contributes to the surface roughening. AP2 antiphase boundaries are stable up to 973K, and ion sputtering and solid phase epitaxy performed at 973K result in atomically flat Si(001) surfaces.Comment: 16 pages, 4 figures, to be published in Surface Scienc

Sputtered silicon nitride coatings for wear protection

Silicon nitride films were deposited by RF sputtering on 304 stainless steel substrates in a planar RF sputtering apparatus. The sputtering was performed from a Si3N4 target in a sputtering atmosphere of argon and nitrogen. The rate of deposition, the composition of the coatings, the surface microhardness and the adhesion of the coatings to the substrates were investigated as a function of the process parameters, such as: substrate target distance, fraction nitrogen in the sputtering atmosphere and sputtering pressure. Silicon rich coating was obtained for fraction nitrogen below 0.2. The rate of deposition decreases continuously with increasing fraction nitrogen and decreasing sputtering pressure. It was found that the adherence of the coatings improves with decreasing sputtering pressure, almost independently of their composition

Novel sputtering-technology for grain-size control

In this paper, we present a description of a novel high-rate plasma sputtering system that allows the control of grain size in sputtered films. Additionally, the system has the advantage of a better utilization of the target material (around 80% to 90%) by eliminating the race track at the target as in conventional plasma magnetron sputtering systems. The potential and capabilities of this novel plasma sputtering device are demonstrated in this paper by the deposition of a number of different Cr thin films suitable for underlayers in thin-film media and for which we have performed a systematic X-ray and TEM analysis to determine the grain-size histograms, mean grain diameters, and their relationship to the sputtering processes

Dust cloud evolution in sub-stellar atmospheres via plasma deposition and plasma sputtering

Context. In contemporary sub-stellar model atmospheres, dust growth occurs through neutral gas-phase surface chemistry. Recently, there has been a growing body of theoretical and observational evidence suggesting that ionisation processes can also occur. As a result, atmospheres are populated by regions composed of plasma, gas and dust, and the consequent influence of plasma processes on dust evolution is enhanced.Aim. This paper aims to introduce a new model of dust growth and destruction in sub-stellar atmospheres via plasma deposition and plasma sputtering.Methods. Using example sub-stellar atmospheres from DRIFT-PHOENIX, we have compared plasma deposition and sputtering timescales to those from neutral gas-phase surface chemistry to ascertain their regimes of influence. We calculated the plasma sputtering yield and discuss the circumstances where plasma sputtering dominates over deposition.Results. Within the highest dust density cloud regions, plasma deposition and sputtering dominates over neutral gas-phase surface chemistry if the degree of ionisation is ≳10−4. Loosely bound grains with surface binding energies of the order of 0.1–1 eV are susceptible to destruction through plasma sputtering for feasible degrees of ionisation and electron temperatures; whereas, strong crystalline grains with binding energies of the order 10 eV are resistant to sputtering.Conclusions. The mathematical framework outlined sets the foundation for the inclusion of plasma deposition and plasma sputtering in global dust cloud formation models of sub-stellar atmospheres

Sputtering yield measurements at glancing incidence using a quartz crystal microbalance

Low energy sputtering yields at grazing incidence have been investigated experimentally using a quartz crystal microbalance (QCM) technique. This method involved precoating the QCM with a thin film of the desired target material and relating the resonance frequency shift directly to mass loss during ion bombardment. A highly focused, low divergence ion beam provided a well defined incidence angle. Focusing most of the ion current on the center of the target allowed for higher sensitivity by taking into account the radial mass sensitivity of the QCM. Measurements of Mo, Cu, and W sputtering yields were taken for low energy (80–1000 eV) Xe+ and Ar+ to validate this experimental method. The target films ranged from 3.5 to 8.0 µm in thickness and were deposited so that their crystal structure and density would match those of the bulk material as closely as possible. These properties were characterized using a combination of scanning electron microscope imagery, profilometry, and x-ray diffraction. At normal incidence, the sputtering yields demonstrated satisfactory agreement with previously published work. At angles of incidence up to 40° off normal, the data agreed well with predictions from existing theoretical models. Sputtering yields were found to increase by a factor of 1.6 over this range. The optimum angle for sputtering occurred at 55°, after which the yields rapidly decreased. Measurements were taken up to 80° from the surface normal

On the sputtering of binary compounds

A simple physical model is presented to describe some aspects of the sputtering of compound targets. In particular, expressions are developed for the partial sputtering yields for binary systems in terms of the elemental sputtering rates, the stoichiometric concentrations and surface binding energy. The partial yields depend non-linearly on the bulk target concentrations. Comparison of the theoretical predictions with the data on sputtering of PtSi, NiSi and Cu3Au indicates that the general features are well described