Single-Supply 3T Gain-Cell for Low-Voltage Low-Power Applications

Logic compatible gain cell (GC) embedded DRAM (eDRAM) arrays are considered an alternative to SRAM due to their small size, non-ratioed operation, low static leakage, and 2-port functionality. However, traditional GC-eDRAM implementations require boosted control signals in order to write full voltage levels to the cell to reduce the refresh rate and shorten access times. These boosted levels require either an extra power supply or on-chip charge pumps, as well as non-trivial level shifting and toleration of high voltage levels. In this paper, we present a novel, logic compatible, 3T GC-eDRAM bitcell that operates with a single supply voltage and provides superior write capability to conventional GC structures. The proposed circuit is demonstrated with a 2kb memory macro that was designed and fabricated in a mature 0.18um CMOS process, targeted at low-power, energy-efficient applications. The test array is powered with a single supply of 900mV, showing an 0.8ms worst-case retention time, a 1.3ns write-access time, and 2.4pW/bit of retention power. The proposed topology provides a bitcell area reduction of 43%, as compared to a redrawn 6T SRAM in the same technology, and an overall macro area reduction of 67% including peripherals

Temperature Variation Operation of Mixed-VT 3T GC-eDRAM for Low Power Applications in 2Kbit Memory Array

Embedded memories were once utilized to transfer information between the CPU and the main memory. The cache storage in most traditional computers was static-random-access-memory (SRAM). Other memory technologies, such as embedded dynamic random-access memory (eDRAM) and spin-transfer-torque random-access memory (STT-RAM), have also been used to store cache data. The SRAM, on the other hand, has a low density and severe leakage issues, and the STT-RAM has high latency and energy consumption when writing. The gain-cell eDRAM (GC-eDRAM), which has a higher density, lower leakage, logic compatibility, and is appropriate for two-port operations, is an attractive option. To speed up data retrieval from the main memory, future processors will require larger and faster-embedded memories. Area overhead, power overhead, and speed performance are all issues with the existing architecture. A unique mixed-V_T 3T GC-eDRAM architecture is suggested in this paper to improve data retention times (DRT) and performance for better energy efficiency in embedded memories. The GC-eDRAM is simulated using a standard complementary-metal-oxide-semiconductor (CMOS) with a 130nm technology node transistor. The performance of a 2kbit mixed-V_T 3T GC-eDRAM array were evaluated through corner process simulations. Each memory block is designed and simulated using Mentor Graphics Software. The array, which is based on the suggested bit-cell, has been successfully operated at 400Mhz under a 1V supply and takes up almost 60-75% less space than 6T SRAM using the same technology. When compared to the existing 6T and 4T ULP SRAMs (others' work), the retention power of the proposed GC-eDRAM is around 80-90% lower

Energy Reduction Techniques to Increase Battery Life for Electronic Sensor Nodes

Preserving battery life in duty-cycled sensor nodes requires minimizing energy use in the active region. Lowering the power supply of CMOS gates down into sub-threshold mode is a good way to decrease energy. In this work, a unique technique to control the current in CMOS gates to reliably operate them in sub-threshold mode is described. Compared to the current state-of-theart for running digital gates in the sub-threshold regime, this work is often superior in its lack of complexity and in reduced variance in delay caused by process variations. In addition to presenting the design considerations, a demonstration of a complete digital design flow is given using the custom gates. An AES128 encryption/decryption engine is designed using the aforementioned digital flow in a commercial 180nm process. The resulting design has a ratio of maximum to minimum frequency variation over corners of only 50% with a 0.3V power supply where the same ratio with standard CMOS gates biased under the same supply voltage is 5600%. In addition, the custom gates are used to design a Wallace tree multiplier in an SOI 45nm process that is fully functional with an optimum energy power supply level of 0.34V with a typical operating frequency of 8 MHz having a variation over corners of 80%. For a proof of concept memory chip designed in this work, the architecture uses a logiccompatible CMOS process particularly suitable for embedded applications. The differential pair construct causes the read and refresh power to be independent of any process parameter including the within-die threshold voltage. The current stop feature keeps the read voltage transition low to further minimize read power. The bit cell operates in both single bit BASE2 and multi-bit BASE4 modes. An expression for the read signal was verified with bit cell simulations. These simulations also compare the performance impact of threshold voltage variance in the architecture with a standard gain cell. A DRAM bit cell array was fabricated in the XFab 180nm CMOS process. Measured waveforms closely match theoretical results obtained from a system simulation. The silicon retention time was measured at room temperature and is greater than 150 ms in BASE2 mode and greater than 75 ms in BASE4 mode. 180nm, 25C analysis predicts 0.8uW/Mbit refresh power at 630 MHz, the lowest in the literature. Further: the memory bit cell architecture presented here has a refresh power delay product several times lower than any other published architecture. The current controlled memory architecture in this work improves or overcomes the drawbacks of the 1T1C and gain cell memory architectures. A current controlled memory design was fabricated as a 131K bit array in an 180nm process to provide silicon proof. The bit cell configuration with shared read and write bit cells gives effectively two memory banks. The grouping of rows together into common source domains allows only two opamps to control the current in all the bit cells across the whole chip. The sense amplifiers have a globally controlled switching threshold point and keep their static power in the nano-amp range. The bit cells can operate either in BASE2 or BASE4 mode and the read bit line transitions are reduced with a current stop construct. Parts were received from the foundry in an 84-pin PLCC and were tested at a number of locations on the die. They proved to be fully functional in BASE4. The silicon retention time was measured at room temperature and was greater than four seconds

Log-domain All-pass Filter-based Multiphase Sinusoidal Oscillators

Log-domain current-mode multiphase sinusoidal oscillators based on all-pass filters are presented in this paper. The first-order differential equation is used for obtaining inverting and non-inverting all-pass filters. The proposed oscillators are realized by all-pass filters which can be electronically tuned their natural frequency and stage gain by adjusting the bias currents. Each all pass filter contains 10 NPN transistors and a grounded capacitor. The validated BJT model which used in SPICE simulation operated by a single power supply as low as 2.5 V. The frequency of oscillation can be controlled over four decades. The total harmonic distortions of these MSO at frequency 56.67 MHz and 54.44 MHz, obtained around 0.52% and 0.75%, respectively. The proposed circuits enable fully integrated in telecommunication systems and also suit to high-frequency applications. Nonideality studies and PSpice simulation results are included to confirm the theory

On-board monitoring of 2-D spatially-resolved temperatures in cylindrical lithium-ion batteries: Part II. State estimation via impedance-based temperature sensing

Impedance-based temperature detection (ITD) is a promising approach for rapid estimation of internal cell temperature based on the correlation between temperature and electrochemical impedance. Previously, ITD was used as part of an Extended Kalman Filter (EKF) state-estimator in conjunction with a thermal model to enable estimation of the 1-D temperature distribution of a cylindrical lithium-ion battery. Here, we extend this method to enable estimation of the 2-D temperature field of a battery with temperature gradients in both the radial and axial directions. An EKF using a parameterised 2-D spectral-Galerkin model with ITD measurement input (the imaginary part of the impedance at 215 Hz) is shown to accurately predict the core temperature and multiple surface temperatures of a 32113 LiFePO$_4$ cell, using current excitation profiles based on an Artemis HEV drive cycle. The method is validated experimentally on a cell fitted with a heat sink and asymmetrically cooled via forced air convection. A novel approach to impedance-temperature calibration is also presented, which uses data from a single drive cycle, rather than measurements at multiple uniform cell temperatures as in previous studies. This greatly reduces the time required for calibration, since it overcomes the need for repeated cell thermal equalization.Comment: 11 pages, 8 figures, submitted to the Journal of Power Source

Cryogenic quasi-static embedded DRAM for energy-efficient compute-in-memory applications

Compute-in-memory (CIM) presents an attractive approach for energy-efficient computing in data-intensive applications. However, the development of suitable memory designs to achieve high-performance CIM remains a challenging task. Here, we propose a cryogenic quasi-static embedded DRAM to address the logic-memory mismatch of CIM. Guided by the re-calibrated cryogenic device model, the designed four-transistor bit-cell achieves full-swing data storage, low power consumption, and extended retention time at cryogenic temperatures. Combined with the adoption of cryogenic write bitline biasing technique and readout circuitry optimization, our 4Kb cryogenic eDRAM chip demonstrates a 1.37$\times$10$^6$ times improvement in retention time, while achieving a 75 times improvement in retention variability, compared to room-temperature operation. Moreover, it also achieves outstanding power performance with a retention power of 112 fW and a dynamic power of 108 $\mu$W at 4.2 K, which can be further decreased by 7.1% and 13.6% using the dynamic voltage scaling technique. This work reveals the great potential of cryogenic CMOS for high-density data storage and lays a solid foundation for energy-efficient CIM implementations

Design of Low-Voltage Digital Building Blocks and ADCs for Energy-Efficient Systems

Increasing number of energy-limited applications continue to drive the demand for designing systems with high energy efficiency. This tutorial covers the main building blocks of a system implementation including digital logic, embedded memories, and analog-to-digital converters and describes the challenges and solutions to designing these blocks for low-voltage operation

Ultra-Low Power Circuit Design for Cubic-Millimeter Wireless Sensor Platform.

Modern daily life is surrounded by smaller and smaller computing devices. As Bell’s Law predicts, the research community is now looking at tiny computing platforms and mm3-scale sensor systems are drawing an increasing amount of attention since they can create a whole new computing environment. Designing mm3-scale sensor nodes raises various circuit and system level challenges and we have addressed and proposed novel solutions for many of these challenges to create the first complete 1.0mm3 sensor system including a commercial microprocessor. We demonstrate a 1.0mm3 form factor sensor whose modular die-stacked structure allows maximum volume utilization. Low power I2C communication enables inter-layer serial communication without losing compatibility to standard I2C communication protocol. A dual microprocessor enables concurrent computation for the sensor node control and measurement data processing. A multi-modal power management unit allowed energy harvesting from various harvesting sources. An optical communication scheme is provided for initial programming, synchronization and re-programming after recovery from battery discharge. Standby power reduction techniques are investigated and a super cut-off power gating scheme with an ultra-low power charge pump reduces the standby power of logic circuits by 2-19× and memory by 30%. Different approaches for designing low-power memory for mm3-scale sensor nodes are also presented in this work. A dual threshold voltage gain cell eDRAM design achieves the lowest eDRAM retention power and a 7T SRAM design based on hetero-junction tunneling transistors reduces the standby power of SRAM by 9-19× with only 15% area overhead. We have paid special attention to the timer for the mm3-scale sensor systems and propose a multi-stage gate-leakage-based timer to limit the standard deviation of the error in hourly measurement to 196ms and a temperature compensation scheme reduces temperature dependency to 31ppm/°C. These techniques for designing ultra-low power circuits for a mm3-scale sensor enable implementation of a 1.0mm3 sensor node, which can be used as a skeleton for future micro-sensor systems in variety of applications. These microsystems imply the continuation of the Bell’s Law, which also predicts the massive deployment of mm3-scale computing systems and emergence of even smaller and more powerful computing systems in the near future.Ph.D.Electrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/91438/1/sori_1.pd

A Low-Power Capacitive Transimpedance D/A Converter

This thesis proposes a new low-power and low-area DAC for single-slope ADCs used in CMOS image sensors. With increase in resolution requirements for ADCs, conventional DAC architectures suffered the limitation of either large area or high power consumption with higher resolution scaling. Thus, the proposed capacitive transimpedance amplifier DAC (CTIA DAC) could solve this by offering the resolution requirement required without taking a hit on the area or power budget. The thesis has been structured in the following manner: The first chapter introduces image sensors in general and talks about progression through different image sensors and pixel architectures that have been used through the years. It also explains the operation of a CMOS image sensor from a paper published from Sony on high-speed image sensors. The second chapter presents the importance and role of DACs in CMOS image sensors and briefly explains a few commonly used DAC architectures in image sensors. It explains the advantages and disadvantages of present architectures and leads the discussion towards the development of the proposed DAC. The third chapter gives an overview of the CTIA DAC and explains the working of the different circuit blocks that are used to implement the proposed DAC. Chapter Four explains the design approach for the blocks explained in Chapter Three. It presents the critical design choices that were made for overall performance of the DAC. Results of individual blocks and the DAC as a whole are presented and compared against other recently published DAC papers. The final chapter summarizes some key results of the design and talks about the scope for future work and improvement