5 research outputs found

    Technology Independent Synthesis of CMOS Operational Amplifiers

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    Analog circuit design does not enjoy as much automation as its digital counterpart. Analog sizing is inherently knowledge intensive and requires accurate modeling of the different parametric effects of the devices. Besides, the set of constraints in a typical analog design problem is large, involving complex tradeoffs. For these reasons, the task of modeling an analog design problem in a form viable for automation is much more tedious than the digital design. Consequently, analog blocks are still handcrafted intuitively and often become a bottleneck in the integrated circuit design, thereby increasing the time to market. In this work, we address the problem of automatically solving an analog circuit design problem. Specifically, we propose methods to automate the transistor-level sizing of OpAmps. Given the specifications and the netlist of the OpAmp, our methodology produces a design that has the accuracy of the BSIM models used for simulation and the advantage of a quick design time. The approach is based on generating an initial first-order design and then refining it. In principle, the refining approach is a simulated-annealing scheme that uses (i) localized simulations and (ii) convex optimization scheme (COS). The optimal set of input variables for localized simulations has been selected by using techniques from Design of Experiments (DOE). To formulate the design problem as a COS problem, we have used monomial circuit models that are fitted from simulation data. These models accurately predict the performance of the circuit in the proximity of the initial guess. The models can also be used to gain valuable insight into the behavior of the circuit and understand the interrelations between the different performance constraints. A software framework that implements this methodology has been coded in SKILL language of Cadence. The methodology can be applied to design different OpAmp topologies across different technologies. In other words, the framework is both technology independent and topology independent. In addition, we develop a scheme to empirically model the small signal parameters like \u27gm\u27 and \u27gds\u27 of CMOS transistors. The monomial device models are reusable for a given technology and can be used to formulate the OpAmp design problem as a COS problem. The efficacy of the framework has been demonstrated by automatically designing different OpAmp topologies across different technologies. We designed a two-stage OpAmp and a telescopic OpAmp in TSMC025 and AMI016 technologies. Our results show significant (10–15%) improvement in the performance of both the OpAmps in both the technologies. While the methodology has shown encouraging results in the sub-micrometer regime, the effectiveness of the tool has to be investigated in the deep-sub-micron technologies

    An Analysis of Posynomial MOSFET Models Using Genetic Algorithms and Visualization

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    MEng thesisAnalog designers are interested in optimization tools which automate the process of circuit sizing. Geometric programming, which uses posynomial models of MOSFET parameters, represents one such tool. Genetic algorithms have been used to evolve posynomial models for geometric programs, with a reasonable mean error when modeling MOSFET parameters. By visualizing MOSFET data using two dimensional plots, this thesis investigates the behavior of various MOSFET small and large signal parameters and consequently proposes a lower bound on the maximum error, which a posynomial cannot improve upon. It then investigates various error metrics which can be used to balance the mean and maximum errors generated by posynomial MOSFET models. Finally, the thesis uses empirical data to verify the existence of the lower bound, and compares the maximum error from various parameters modeled by the genetic algorithm and by monomial fitting. It concludes that posynomial MOSFET models suffer from inherent inaccuracies. Additionally, although genetic algorithms improve on the maximum model error, the improvement, in general, does not vastly surpass results obtained through monomial fitting, which is a less computationally intensive method. Genetic algorithms are hence best used when modeling partially convex MOSFET parameters, such as r0

    Analog circuit optimization using evolutionary algorithms and convex optimization

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    Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2007.Includes bibliographical references (p. 83-88).In this thesis, we analyze state-of-art techniques for analog circuit sizing and compare them on various metrics. We ascertain that a methodology which improves the accuracy of sizing without increasing the run time or the designer effort is a contribution. We argue that the accuracy of geometric programming can be improved without adversely influencing the run time or increasing the designer's effort. This is facilitated by decomposition of geometric programming modeling into two steps, which decouples accuracy of models and run-time of geometric programming. We design a new algorithm for producing accurate posynomial models for MOS transistor parameters, which is the first step of the decomposition. The new algorithm can generate posynomial models with variable number of terms and real-valued exponents. The algorithm is a hybrid of a genetic algorithm and a convex optimization technique. We study the performance of the algorithm on artificially created benchmark problems. We show that the accuracy of posynomial models of MOS parameters is improved by a considerable amount by using the new algorithm. The new posynomial modeling algorithm can be used in any application of geometric programming and is not limited to MOS parameter modeling. In the last chapter, we discuss various ideas to improve the state-of-art in circuit sizing.by Varun Aggarwal.S.M

    Simulation-based reusable posynomial models for MOS transistor parameters

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    Simulation-based reusable posynomial models for MOS transistor parameters

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    We present an algorithm to automatically design posynomial models for parameters of the MOS transistors using simulation data. These models improve the accuracy of the Geometric Programming flow for automatic circuit sizing. The models are reusable for multiple circuits on a given Silicon technology and hence don’t adversely affect the scalability of the Geometric Programming approach. The proposed method is a combination of genetic algorithms and Quadratic Programming. It is the only approach for posynomial modeling with real-valued exponents which is easily extensible to different error metrics. We compare the proposed technique with state-of-art posynomial/monomial modeling techniques and show its superiority. 1
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