Were Presolar Grains Destroyed by the Nebular Process Responsible for the Volatile Element Fractionation?

We present SiC abundances from a number of CM and CR chondrites using NanoSIMS raster ion imaging of acid residues. We find higher SiC abundances for CRs than previously estimated based on noble gases

Parametric Nanomechanical Amplification at Very High Frequency

Parametric resonance and amplification are important in both fundamental physics and technological applications. Here we report very high frequency (VHF) parametric resonators and mechanical-domain amplifiers based on nanoelectromechanical systems (NEMS). Compound mechanical nanostructures patterned by multilayer, top-down nanofabrication are read out by a novel scheme that parametrically modulates longitudinal stress in doubly clamped beam NEMS resonators. Parametric pumping and signal amplification are demonstrated for VHF resonators up to ~ 130 MHz and provide useful enhancement of both resonance signal amplitude and quality factor. We find that Joule heating and reduced thermal conductance in these nanostructures ultimately impose an upper limit to device performance. We develop a theoretical model to account for both the parametric response and nonequilibrium thermal transport in these composite nanostructures. The results closely conform to our experimental observations, elucidate the frequency and threshold-voltage scaling in parametric VHF NEMS resonators and sensors, and establish the ultimate sensitivity limits of this approach

Evaluation of MHOST analysis capabilities for a plate element

Results of the evaluation of the static, buckling, and free vibration analyses capabilities of MHOST for the plate elements are presented. Two large scale, general purpose finite element codes (MARC and MSC/NASTRAN) are used to validate MHOST. Comparisons of MHOST results with those from MARC and MSC/NASTRAN show good agreement and indicate that MHOST can be used with confidence to perform the aforementioned analyses using the plate element

Opto-thermal analysis of a lightweighted mirror for solar telescope

In this paper, an opto-thermal analysis of a moderately heated lightweighted solar telescope mirror is carried out using 3D finite element analysis (FEA). A physically realistic heat transfer model is developed to account for the radiative heating and energy exchange of the mirror with surroundings. The numerical simulations show the non-uniform temperature distribution and associated thermo-elastic distortions of the mirror blank clearly mimicking the underlying discrete geometry of the lightweighted substrate. The computed mechanical deformation data is analyzed with surface polynomials and the optical quality of the mirror is evaluated with the help of a ray-tracing software. The thermal print-through distortions are further shown to contribute to optical figure changes and mid-spatial frequency errors of the mirror surface. A comparative study presented for three commonly used substrate materials, namely, Zerodur, Pyrex and Silicon Carbide (SiC) is relevant to vast area of large optics requirements in ground and space applications.Comment: Accepted for publication in Optics Express, 17 pages, 11 figure

Sintered silicon carbide molded body and method for its production

Sintered silicon carbide shapes are described. They are produced by using a composition containing an oxide of at least one element chosen from the group: Li, Be, Mg, Si, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Nb, Mo, Ba, Tc, Ta, W and Th as a supplement to known sintering aids

High-temperature deep-level transient spectroscopy system for defect studies in wide-bandgap semiconductors

Full investigation of deep defect states and impurities in wide-bandgap materials by employing commercial transient capacitance spectroscopy is a challenge, demanding very high temperatures. Therefore, a high-temperature deep-level transient spectroscopy (HT-DLTS) system was developed for measurements up to 1100 K. The upper limit of the temperature range allows for the study of deep defects and trap centers in the bandgap, deeper than previously reported by DLTS characterization in any material. Performance of the system was tested by conducting measurements on the well-known intrinsic defects in n-type 4H-SiC in the temperature range 300-950 K. Experimental observations performed on 4H-SiC Schottky diodes were in good agreement with the literatures. However, the DLTS measurements were restricted by the operation and quality of the electrodes