0.5 GHz-1.5 GHz Bandwidth 10W GaN HEMT RF Power Amplifier Design

With the current development in wireless communication technology, the need for a wide bandwith in RF power amplifier (RF PA) is an essential. In this paper, the design and simulation of 10W GaN HEMT wideband RF PA will be presented. The Source-Pull and Load-Pull technique was used to design the input and output matching network of the RF PA. From the simulation, the RF PA achieved a flat gain between 15dB to 17dB from 0.5GHz to 1.5GHz. At 1.5GHz, the drain efficiency is simulated to achieve 36% at the output power of 40 dBm while the power added efficiency (PAE) was found to be 28.2%

Contributing to Second Harmonic Manipulated Continuum Mode Power Amplifiers and On-Chip Flux Concentrators

The current cellular network consumes a staggering 100 TWh of energy every year. In the coming years, millions of devices will be added to the existing network to realize the Internet of Things (IoT), further increasing its power consumption. An RF power amplifier typically consumes a large proportion of the DC power in a wireless transceiver, improving its efficiency has the largest impact on the overall system. Additionally, amplifiers need to demonstrate high linearity and bandwidth to adhere to constraints imposed by wireless standards and to reduce the number of amplifiers required as an amplifier with a broader bandwidth can potentially replace several narrowband amplifiers. A typical approach to improve efficiency is to present an appropriate load at the harmonics generated by the transistor. Recently proposed continuous modes based on harmonic manipulation, such as class B/J continuum, continuous class F (CCF) and continuous class F-1 (CCF-1), have shown the capability of achieving counteracting requirements viz., high efficiency, high linearity, and broad bandwidth (with a fractional bandwidth greater than 30%). In these classes of amplifiers, the second harmonic is manipulated by placing a reactive second harmonic load and the reactive component of the fundamental load is adjusted while keeping a fixed resistive component of the fundamental load. The first contribution of this work is to investigate the reason for amplifiers designed in classes B/J continuum and CCF to achieve high efficiency at back-off and 1dB compression. In this thesis, we demonstrate that the variation of the phase of the current through the non-linear intrinsic capacitances due to the variation of the phase in the continuum of drain voltage waveforms in Class B/J/J* continuum leads to either a reduction or enhancement of intrinsic drain current. Consequently, a subset of voltage waveforms of the class B/J/J* continuum can be used to design amplifiers with higher P1dB, and efficiency at P1dB than in Class B. A simple choice of this subset is demonstrated with a 2.6GHz Class B/J/J* amplifier, achieving a P1dB of 38.1dBm and PAE at P1dB of 54.7%, the highest output power and efficiency at P1dB amongst narrowband linear amplifiers using the CGH40010 reported to date, at a comparable peak PAE of 72%. Secondly, we propose a new formulation for high-efficiency modes of power amplifiers in which both the in-phase and out-of-phase components of the second harmonic of the current are varied, in addition to the second harmonic component of the voltage. A reduction of the in-phase component of the second harmonic of current allows reduction of the phase difference between the voltage and current waveforms, thereby increasing the power factor and efficiency. Our proposed waveforms offer a continuous design space between class B/J continuum and continuous F-1 achieving an efficiency of up to 91% in theory, but over a wider set of load impedances than continuous class F-1. These waveforms require a short at third and higher harmonic impedances, which are easier to achieve at a higher frequency. The load impedances at the second harmonic are reactive and can be of any value between -j∞ and j∞, easing the amplifier design. A trade-off between linearity and efficiency exists in the newly proposed broadband design space, but we demonstrate inherent broadband capability. The fabricated narrowband amplifier using a GaN HEMT CGH40010F demonstrates 75.9% PAE and 42.2 dBm output power at 2.6 GHz, demonstrating a comparable frequency weighted efficiency for this device to that reported in the literature. IoT devices may be deployed in critical applications such as radar or 5G transceivers of an autonomous vehicle and hence need to operate free of failure. Monitoring the drain current of the RF GaN MMIC would allow to optimize the device performance and protect it from surges in its supply current. Galvanic current sensors rely on the magnetic field generated by the current as a non-invasive method of current sensing. In this thesis, our third major contribution is a planar on-chip magnetic flux concentrator, is enhance the magnetic field at the current sensor, thereby improving the current detection capability of a current sensor. Our layout utilizes a discontinuity in a magnetic via, resulting in penetration of the magnetic field into the substrate. The proposed concentrator has a magnetic gain x1.8 in comparison to air. The permeability of the magnetic core required is 500, much lower than that reported in off-chip concentrators, resulting in a significant easing of the specifications of the material properties of the core. Additionally, we explore a novel three-dimensional spiral-shaped magnetic flux concentrator. It is predicted via simulations that this geometry becomes a necessity to enhance the magnetic field for increased form factor as the magnetic field from a single planar concentrator deteriorates as its size increases

Broadband Linearity-Enhanced Doherty Power Amplifier Design Techniques for 5G Sub-6 GHz Applications

The recently deployed fifth generation (5G) cellular networks represent a significant technological advancement over fourth generation (4G) networks. Specifically, new 5G frequency bands were allocated at sub-6 GHz and instantaneous signal bandwidths were increased to satisfy the rapidly growing needs for increased data rates. Furthermore, 5G uses more complex modulation schemes to improve spectrum efficiency. Finally, 5G introduced massive multiple input multiple output (MIMO), where multiple transceivers are used to direct the signal towards specific users, increasing channel capacity. Conventional power amplifiers (PAs) are not suitable for 5G applications due to the increased signal and system complexity. For example, the Doherty power amplifier (DPA) technique is popular since DPAs can efficiently amplify signals with complex modulation schemes, but conventional DPAs have narrow bandwidth and poor linearity that preclude their use in 5G systems. This motivated research into DPA bandwidth and linearity improvements for use in 5G networks. This work focuses on bandwidth and linearity enhancement for sub-6 GHz DPAs realized using discrete components on a printed circuit board (PCB). Bandwidth is improved using broadband architectures for the DPA output combiner network (OCN), the absorption of drain parasitics, and broadband input matching network (IMN) design. Linearity is enhanced by proper drain biasing network design, and careful selection of transistor source impedances. A 3.3–5.0 GHz DPA using these techniques is designed and fabricated. Under wideband modulated signal excitation, the DPA offers very good linearity with appropriate digital predistortion (DPD). A 2×2 array of DPAs is evaluated in fully digital MIMO setup using a 2×2 antenna array. The DPA array achieves excellent linearity characteristics under 100 MHz signals and use of dual-input single-output (DISO) DPD. The DPA remains the ideal choice in 5G MIMO systems when compared to the class AB PA since it can maintain a higher average drain efficiency and similar linearity

Supply modulated GaN HEMT power amplifiers - From transistor to system

Power amplifiers (PAs) for mobile communication applications are required to fulfil stringent requirements concerning linearity while keeping a high efficiency over a wide power range and bandwidth. To achieve this, a number of advanced PA topologies have been developed, mostly based on either load modulation, such as Doherty PAs or load modulation balanced PAs, or on supply modulation such as envelope tracking or envelope elimination and restoration. Supply modulation has an advantage over other topologies as the power range of high efficiency can be realised over arbitrary bandwidths, only limited by the bandwidth of the PA. This does, however, come at the cost of a significantly more complicated voltage supply. Instead of a static supply voltage, the PA needs to be provided with one which is rapidly changing, requiring a supply modulator capable of powering the PA while modulating its supply voltage. This thesis investigates a number of challenges in supply modulated power amplifiers, ranging from the transistor itself to circuit design and system level considerations and focusses on power levels up to 10 W and frequencies between 1 GHz and 4 GHz. Transistors, as the centre-piece of a PA, determine how well the PA reacts to a changing supply voltage. In this work, the traits that make GaN HEMTs suitable for supply modulated PAs were investigated, and gain variation with changing supply voltage was established as an important parameter. This gain variation is described in detail and its impacts on PA performance are discussed. By comparing transistors in literature, gain variation has been demonstrated to be a prevalent characteristic in transistors with GaN HEMTs showing a very wide range of gain variation. Using a small-signal model based on measurements, the voltage dependent behaviour of the feedback capacitance CGD is, for the first time, identified as the origin of small-signal gain variation. This is traced down to the gate field plate which is commonly used to combat surface trapping effects in GaN HEMTs. With this in mind, two different ways of changing the transistor geometry to reduce the impact of gain variation and thus optimise the transistor for operation in supply modulated PAs are discussed and demonstrated using a 250 nm GaN HEMT. As a result of the non-linearity of the feedback and gate-source capacitances, the input impedance of GaN HEMTs changes with supply voltage and drive power. This prevents the transistor from being matched at all supply voltages and input powers and introduces phase distortion. Using simulation and measurement, the impact of input impedance on linearity and efficiency of supply modulated power amplifiers is demonstrated on a 2.9 GHz 10 W PA. Careful selection of the input impedance allows improvement of AM/PM distortion of a supply modulated PA with little cost in terms of AM/AM and PAE. I Supply modulators have a significant impact on efficiency and linearity of the ET system. One supply modulator topology with the potential to generate a supply voltage with a high modulation bandwidth is the RF modulator in which the input DC voltage is turned into an RF signal and rectified, resulting in an output voltage which depends on the excitation of the PA. While PAs are well understood in every detail, there are gaps in the understanding of RF rectifiers. Using active load-pull/source-pull measurements, intrinsic gate and drain waveforms of a GaN HEMT operated as a rectifier are demonstrated for the first time. This allows in-detail evaluation of the impact of the gate termination in self-synchronous rectifiers. It also allows detailed analysis of the loss mechanisms in rectifiers and formulation of the required impedances to realise efficient self-synchronous operation, resulting in efficiencies exceeding 90% over wide power ranges. Using waveform engineering, a new type of RF modulator, with potentially very high bandwidths, based on even harmonic generation/injection is proposed. The necessary operating conditions of the rectifier part of the modulator are emulated using an active load-pull/source-pull system to successfully demonstrate that the rectifier behaves as predicted. Using a simple demonstrator, preliminary measurements were conducted and the RF modulator was shown to work, reaching efficiencies up to 78%. As PA and supply modulator are combined, they present impedances to each other. These impedances have a significant impact on the behaviour of both sub-systems. A simple way to characterise both the impedance presented to the PA by the modulator and the impedance presented to the modulator by the PA is described. Using a state-of-the-art modulator, these impedances are measured, the modulator impedance is demonstrated to be close to the simulated value. These measurements also demonstrate that the impedances change significantly with the operating conditions

Design and analysis of wideband passive microwave devices using planar structures

A selected volume of work consisting of 84 published journal papers is presented to demonstrate the contributions made by the author in the last seven years of his work at the University of Queensland in the area of Microwave Engineering. The over-arching theme in the author’s works included in this volume is the engineering of novel passive microwave devices that are key components in the building of any microwave system. The author’s contribution covers innovative designs, design methods and analyses for the following key devices and associated systems: Wideband antennas and associated systems Band-notched and multiband antennas Directional couplers and associated systems Power dividers and associated systems Microwave filters Phase shifters Much of the motivation for the work arose from the desire to contribute to the engineering o

Electronic warfare self-protection of battlefield helicopters : a holistic view

The dissertation seeks to increase understanding of electronic warfare (EW) self-protection (EWSP) of battlefield helicopters by taking a holistic (systems) view on EWSP. It also evaluates the methodologies used in the research and their suitability as descriptive tools in communication between various EWSP stakeholders. The interpretation of the term "holistic view" is a central theme to the dissertation. The research methodology is bottom-up – which is necessary since no previous work exists that could guide the study – and progresses from analysis to synthesis. Initially several methods are evaluated for presenting findings on EWSP, including high-level system simulation such as Forrester system dynamics (FSD). The analysis is conducted by a comprehensive literature review on EW and other areas that are believed to be of importance to the holistic view. Combat scenarios, intelligence, EW support, validation, training, and delays have major influence on the effectiveness of the EWSP suite; while the initial procurement decision on the EWSP suite sets limits to what can be achieved later. The need for a vast support structure for EWSP means that countries with limited intelligence and other resources become dependent on allies for support; that is, the question of EWSP effectiveness becomes political. The synthesis shows that a holistic view on EWSP of battlefield helicopters cannot be bounded in the temporal or hierarchical (organizational) senses. FSD is found to be helpful as a quality assurance tool, but refinements are needed if FSD is to be useful as a general discussion tool. The area of survivability is found to be the best match for the holistic view – for an EWSP suprasystem. A global survivability paradigm is defined as the ultimate holistic view on EWSP. It is suggested that future research should be top-down and aiming at promoting the global survivability paradigm. The survivability paradigm would give EWSP a natural framework in which its merits can be assessed objectively.reviewe