Adaptive optics wavefront compensation for solid immersion microscopy in backside imaging

Thesis (Ph.D.)--Boston UniversityThis dissertation concerns advances in high-resolution optical microscopy needed to detect faults in next generation semiconductor chips. In this application, images are made through the chips' back side to avoid opaque interconnect metal layers on the frontside. Near infrared wavelengths are required, since the silicon is relatively transparent at these wavelengths. A significant challenge in this technique is to resolve features as small as 200nm using wavelengths exceeding 1OOOnm. The highest imaging resolution achievable with refractive optics at infrared wavelengths is demonstrated in this dissertation using an aplanatic solid immersion lens (SIL). This is the only method that has been found to be of sufficient resolution to image the next generation of integrated circuits. While the use of an aplanatic solid immersion lens theoretically allows numerical aperture far in excess of conventional microscopy (NASIL ~ 3.5), it also makes the system performance particularly sensitive to aberrations, especially when the samples have thicknesses that are more than a few micrometers thicker or thinner than designed thickness, or when the refractive index of the SIL is slightly different than that of the sample. In the work described here, practical design considerations of the SILs are examined. A SIL-based confocal scanning microscope system is designed and constructed. The aberrations of the system due to thickness uncertainty and material mismatch are simulated using both analytical model and ray-tracing software, and are measured in the SIL experimental apparatus. The dominant aberration for samples with thickness mismatch is found to be spherical aberration. Wavefront errors are compensated by a microelectromechanical systems deformable mirror (MEMS DM) in the optical system's pupil. The controller is implemented either with closed-loop real time sensor feedback or with predictive open-loop estimation of optical aberrations. Different DM control algorithms and aberration compensation techniques are studied and compared. The experimental results agree well with simulation and it has been demonstrated through models and experiments in this work that the stringent sample thickness tolerances previously needed for high numerical aperture SIL microcopy can be relaxed considerably through aberration compensation. Near-diffraction-limited imaging performance has been achieved in most cases that correspond to practical implementation of the technique

Subsurface optical microscopy of semiconductor integrated circuits

Thesis (Ph.D.)--Boston UniversityThe semiconductor industry continues to scale integrated circuits (ICs) in accordance with Moore's Law, and is currently developing the processing infrastructure at the 14nm technology node and smaller. In the wake of such rapid progress, a number of challenges have arisen for the optical failure analysis methods to meet the requirements of the advancing process technology. Most notably, complex circuits with shrinking critical dimensions will demand higher resolution signal localization currently beyond the capability of the existing optical techniques. This dissertation aims to develop novel optical systems to address the challenges of non-destructive circuit diagnostics at the 14nm technology node and beyond. Backside imaging through the silicon substrate has become an industry standard due to the dense multi-level metal wiring and the packaging requirements. The solid immersion lens is a plano-convex lens placed on the planar silicon substrate to enhance the subsurface focusing and collection of light in back-side imaging of ICs. The silicon and gallium-arsenide aplanatic solid immersion lenses (aSILs) were investigated in detail for the subsurface laser-scanning, voltage modulation, photon emission and dark-field IC imaging applications. Wave-front sensing and shaping techniques were developed to evaluate and mitigate optical aberrations originating from practical issues. Furthermore, the method of pupil function tailoring was explored for sub-diffraction spatial resolution. Super-resolving annular phase and amplitude pupil masks were developed and experimentally implemented. A record-breaking light confinement of 0.02 λ2 0(λ 0 refers to the free-space wavelength) was demonstrated using the vortex beams. The beam invasiveness is a critical issue in the optical circuit probing as the localized heat due to the absorption of the focused beams may unwittingly interfere with the circuit operation in the course of a measurement. A dual-phase interferometry assisted circuit probing was developed to enhance the signal extraction sensitivity by as much as an order of magnitude. Thus, the power requirement of the probe beam is significantly reduced to avert the consequences of the beam invasiveness. The optical systems and methods developed in this dissertation were successfully demonstrated using a number of modern ICs including devices of 14nm, 22nm, 28nm and 32nm technology nodes

Analyse des circuits intégrés par laser en mode sonde

The main objective of the presented research work in this PhD thesis is to help to understand the different mechanisms and phenomena involved in the interaction of a laser with a semiconductor in the analysis of a submicron integrated circuit. The aim is to master and improve the Electro Optical Probing techniques. Miniaturization and densification of electronic components lead the failure analysis techniques using Laser to their limits. Knowing the impact of different physical, optical and electrical parameters on a probing analysis is a key to improve the understanding the measured EOP signals. These studies also show the significant effect of temperature on the EOP techniques.Les travaux de recherche présentés dans ce manuscrit de thèse ont pour principal objectif d’aider à comprendre les différents mécanismes et phénomènes qui interviennent lors de l’interaction d’un laser avec un semiconducteur dans une analyse de circuits intégrés submicroniques. Le but étant de maitriser et améliorer les techniques d’analyse par laser en mode sonde. La miniaturisation et la densification des composants électroniques fait que les techniques d’analyse par laser atteignent leurs limites. Connaitre l’impact des différents paramètres physiques, optiques et électriques sur une analyse sonde est un facteur clé pour pouvoir améliorer la compréhension des signaux sonde mesuré. Ces travaux montrent également l’effet non négligeable de la température sur les techniques d’analyse par laser en mode sonde