Spontaneous decay of an emitter's excited state near a finite-length metallic carbon nanotube

The spontaneous decay of an excited state of an emitter placed in the vicinity of a metallic single-wall carbon nanotube (SWNT) was examined theoretically. The emitter-SWNT coupling strongly depends on the position of the emitter relative to the SWNT, the length of the SWNT, the dipole transition frequency and the orientation of the emitter. In the high-frequency regime, dips in the spectrum of the spontaneous decay rate exist at the resonance frequencies in the spectrum of the SWNT conductivity. In the intermediate-frequency regime, the SWNT conductivity is very low, and the spontaneous decay rate is practically unaffected by the SWNT. In the low-frequency regime, the spectrum of the spontaneous decay rate contains resonances at the antennas resonance frequencies for surface-wave propagation in the SWNT. Enhancement of both the total and radiative spontaneous decay rates by several orders in magnitude is predicted at these resonance frequencies. The strong emitter-field coupling is achieved, in spite of the low Q factor of the antenna resonances, due to the very high magnitude of the electromagnetic field in the near-field zone. The vacuum Rabi oscillations of the population of the excited emitter state are exhibited when the emitter is coupled to an antenna resonance of the SWNT.Comment: 8 pages, 6 figure

Scattering of the near field of an electric dipole by a single-wall carbon nanotube

The use of carbon nanotubes as optical probes for scanning near-field optical microscopy requires an understanding of their near-field response. As a first step in this direction, we investigated the lateral resolution of a carbon nanotube tip with respect to an ideal electric dipole representing an elementary detected object. A Fredholm integral equation of the first kind was formulated for the surface electric current density induced on a single-wall carbon nanotube (SWNT) by the electromagnetic field due to an arbitrarily oriented electric dipole located outside the SWNT. The response of the SWNT to the near field of a source electric dipole can be classified into two types, because surface-wave propagation occurs with (i) low damping at frequencies less than ~ 200-250 THz and (ii) high damping at higher frequencies. The interaction between the source electric dipole and the SWNT depends critically on their relative location and relative orientation, and shows evidence of the geometrical resonances of the SWNT in the low-frequency regime. These resonances disappear when the relaxation time of the SWNT is sufficiently low. The far-field radiation intensity is much higher when the source electric dipole is placed near an edge of SWNT than at the centroid of the SWNT. The use of an SWNT tip in scattering-type scanning near-field optical microscopy can deliver a resolution less than ~ 20 nm. Moreover, our study shows that the relative orientation and distance between the SWNT and the nanoscale dipole source can be detected.Comment: 23 pages, 16 figure

Carbon nanotubes adhesion and nanomechanical behavior from peeling force spectroscopy

Applications based on Single Walled Carbon Nanotube (SWNT) are good example of the great need to continuously develop metrology methods in the field of nanotechnology. Contact and interface properties are key parameters that determine the efficiency of SWNT functionalized nanomaterials and nanodevices. In this work we have taken advantage of a good control of the SWNT growth processes at an atomic force microscope (AFM) tip apex and the use of a low noise (1E-13 m/rtHz) AFM to investigate the mechanical behavior of a SWNT touching a surface. By simultaneously recording static and dynamic properties of SWNT, we show that the contact corresponds to a peeling geometry, and extract quantities such as adhesion energy per unit length, curvature and bending rigidity of the nanotube. A complete picture of the local shape of the SWNT and its mechanical behavior is provided

In-plane remote photoluminescence excitation of carbon nanotube by propagating surface plasmon

In this work, we demonstrate propagating surface plasmon polariton (SPP) coupled photoluminescence (PL) excitation of single-walled carbon nanotube (SWNT). SPPs were launched at a few micrometers from individually marked SWNT, and plasmon-coupled PL was recorded to determine the efficiency of this remote in-plane addressing scheme. The efficiency depends upon the following factors: (i) longitudinal and transverse distances between the SPP launching site and the location of the SWNT and (ii) orientation of the SWNT with respect to the plasmon propagation wave vector (k SPP). Our experiment explores the possible integration of carbon nanotubes as a plasmon sensor in plasmonic and nanophotonic devices

Scaling analysis of electron transport through metal-semiconducting carbon nanotube interfaces: Evolution from the molecular limit to the bulk limit

We present a scaling analysis of electronic and transport properties of metal-semiconducting carbon nanotube interfaces as a function of the nanotube length within the coherent transport regime, which takes fully into account atomic-scale electronic structure and three-dimensional electrostatics of the metal-nanotube interface using a real-space Green's function based self-consistent tight-binding theory. As the first example, we examine devices formed by attaching finite-size single-wall carbon nanotubes (SWNT) to both high- and low- work function metallic electrodes through the dangling bonds at the end. We analyze the nature of Schottky barrier formation at the metal-nanotube interface by examining the electrostatics, the band lineup and the conductance of the metal-SWNT molecule-metal junction as a function of the SWNT molecule length and metal-SWNT coupling strength. We show that the confined cylindrical geometry and the atomistic nature of electronic processes across the metal-SWNT interface leads to a different physical picture of band alignment from that of the planar metal-semiconductor interface. We analyze the temperature and length dependence of the conductance of the SWNT junctions, which shows a transition from tunneling- to thermal activation-dominated transport with increasing nanotube length. The temperature dependence of the conductance is much weaker than that of the planar metal-semiconductor interface due to the finite number of conduction channels within the SWNT junctions. We find that the current-voltage characteristics of the metal-SWNT molecule-metal junctions are sensitive to models of the potential response to the applied source/drain bias voltages.Comment: Minor revision to appear in Phys. Rev. B. Color figures available in the online PRB version or upon request to: [email protected]