34,726 research outputs found
Integrated ultrasonic particle positioning and low excitation light fluorescence imaging
A compact hybrid system has been developed to position and detect fluorescent micro-particles by combining a Single Photon Avalanche Diode (SPAD) imager with an acoustic manipulator. The detector comprises a SPAD array, light-emitting diode (LED), lenses, and optical filters. The acoustic device is formed of multiple transducers surrounding an octagonal cavity. By stimulating pairs of transducers simultaneously, an acoustic landscape is created causing fluorescent micro-particles to agglomerate into lines. The fluorescent pattern is excited by a low power LED and detected by the SPAD imager. Our technique combines particle manipulation and visualization in a compact, low power, portable setup
A novel active quenching circuit for single photon detection with Geiger mode avalanche photodiodes
In this paper we present a novel construction of an active quenching circuit
intended for single photon detection. For purpose of evaluation, we have
combined this circuit with a standard avalanche photodiode C30902S to form a
single photon detector. A series of measurements, presented here, show that
this single photon detector has a dead time of less than 40ns, maximum random
counting frequency of over 14MHz, low after pulsing, detection efficiency of
over 20% and a good noise performance. This simple and robust active quenching
circuit can be built from of-the-shelf electronic components and needs no
complicated adjustments.Comment: 9 pages, 13 figures, 15 reference
SPAD-502 and atLEAF CHL PLUS values provide good estimation of the chlorophyll content for Hevea brasiliensis Müll. Arg. Leaves
Measurement of chlorophyll content using destructive methods is not efficient due to a large number of samples, cost, and time needed. Estimationof chlorophyll content by nondestructive methods using handheld chlorophyll meter may be considered to improve efficiency. This research aimed to determine the formula to convert SPAD-502 and atLEAF CHL PLUS values (relative indicator of chlorophyll content) to estimated (absolute) rubber leaves chlorophyll content. Twenty leaves of rubber plant were measured using SPAD-502 and atLEAF CHL PLUS at the same time to determine SPAD-502 and atLEAF CHL PLUS values. The measured leaves were then collected to determine the chlorophyll content using a standard laboratory procedure. Regression and correlation analyses (among 3 methods) were conducted using SAS v.9 software. The results showed that between SPAD-502 and atLEAF CHL PLUS values were closely correlated, hence both of the devices can substitute each other to estimate rubber leaf chlorophyll content. In addition, the relationship between atLEAF CHL PLUS and SPAD-502 values with actual chlorophyll content of rubber clone SP 217, PB 260, GT1, and all clones (general) were significant with high coefficient of determination (R2) as well as low Root Mean Square Error (RMSE) and Coefficient of Variation (CV). Therefore, by using formula determined in this study, both atLEAF CHL PLUS and SPAD-502 can be suggested for accurate, fast, and non-destructive estimation of chlorophyll content of rubber plant leaf
Low Noise and High Photodetection Probability SPAD in 180 nm Standard CMOS Technology
A square shaped, low noise and high photo-response single photon avalanche diode suitable for circuit integration, implemented in a standard CMOS 180 nm high voltage technology, is presented. In this work, a p+ to shallow n-well junction was engineered with a very smooth electric field profile guard ring to attain a photo detection probability peak higher than 50% with a median dark count rate lower than 2 Hz/μm2 when operated at an excess bias of 4 V. The reported timing jitter full width at half maximum is below 300 ps for 640 nm laser pulses
A CMOS 8×8 SPAD array for Time-of-Flight measurement and light-spot statistics
The design and simulation of a CMOS 8 × 8 single photon avalanche diode (SPAD) array is presented. The chip has been fabricated in a 0.18μm standard CMOS technology and implements a double functionality: measuring the Time-of-Flight with the help of a pulsed light source; or computing focal-plane statistics in biomedical imaging applications based on a concentrated light-spot. The incorporation of on-chip processing simplifies the interfacing of the array with the host system. The pixel pitch is 32μm, while the diameter of the quasi-circular active area of the SPADs is 12μm. The 113μm 2 active area is surrounded by a T-well guard ring. The resulting breakdown voltage is 10V with a maximum excess voltage of 1.8V. The pixel incorporates a novel active quenching/reset circuit. The array has been designed to operate with a laser pulsed at 20Mhz. The overall time resolution is 115ps. Focal-plane statistics are obtained in digital format. The maximum throughput of the digital output buffers is 200Mbps.Ministerio de Economía y Competitividad IPT-2011-1625- 430000, IPC-20111009Office of Naval Research (USA) N00014111031
Low-Noise and High-Efficiency Near-IR SPADs in 110nm CIS Technology
Photon detection at longer wavelengths is much desired for LiDAR applications. Silicon photodiodes with deeper junctions and larger multiplication regions are in principle more sensitive to near-IR photons. This paper presents the complete electro-optical characterization of a P-well/ Deep N-well singlephoton avalanche diodes integrated in 110nm CMOS image sensor technology. The performance of time-of-flight image sensors is determined by the characteristics of the individual SPADs. In order to fully characterize this technology, devices with various sizes, shapes and guard ring widths have been fabricated and tested. The measured mean breakdown voltage is of 18V. The proposed structure has 0.4Hz/µm 2 dark count rate, 0.5% afterpulsing, 188ps FWHM (total) jitter and around 10% photon detection probability at 850nm wavelength. All figures have been measured at 3V excess voltage.Office of Naval Research (USA) N000141912156Junta de Andalucía P12-TIC 2338Ministerio de Economía y Competitividad RTI2018-097088-B-C3
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