Table 1:

The 74LV164 is a low-voltage, Si-gate CMOS device and is pin and function compatible with the 74HC164 and 74HCT164. The 74LV164 is an 8-bit edge-triggered shift register with serial data entry and an output from each of the eight stages. Data is entered serially through one of two inputs (DSA or DSB) and either input can be used as an active HIGH enable for data entry through the other input. Both inputs must be connected together or an unused input must be tied HIGH. Data shifts one place to the right on each LOW-to-HIGH transition of the clock input (CP) and enters into Q0, which is the logical AND-function of the two data inputs (DSA and DSB) that existed one set-up time prior to the rising clock edge. A LOW on the master reset input (MR) overrides all other inputs and clears the register asynchronously, forcing all outputs LOW. ■ Wide operating voltage: 1.0 V to 5.5 V ■ Optimized for low-voltage applications: 1.0 V to 3.6 V ■ Accepts TTL input levels between VCC = 2.7 V and VCC = 3.6 V ■ Typical VOLP (output ground bounce): < 0.8 V at VCC = 3.3 V and Tamb = 25 °C ■ Typical VOHV (output VOH undershoot):> 2 V at VCC = 3.3 V and Tamb = 25 °C ■ Gated serial data inputs ■ Asynchronous master reset ■ ESD protection

Symbol Parameter Conditions Min Typ Max Unit

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits � Q101 compliant � Suitable for standard level gate drive sources � Suitable for thermally demanding environments due to 175 °C ratin

Table 1.

Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due to low switching and conduction losses • Suitable for standard level gate drive source

Dynamic characteristics

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits � Higher operating power due to low thermal resistance � Suitable for high frequency applications due to fast switching characteristics 1.3 Application

REVIEW - A reference data set for retinal vessel profiles

This paper describes REVIEW, a new retinal vessel reference dataset. This dataset includes 16 images with 193 vessel segments, demonstrating a variety of pathologies and vessel types. The vessel edges are marked by three observers using a special drawing tool. The paper also describes the algorithm used to process these segments to produce vessel profiles, against which vessel width measurement algorithms can be assessed. Recommendations are given for use of the dataset in performance assessment. REVIEW can be downloaded from http://ReviewDB.lincoln.ac.uk

Few-body reference data for multicomponent formalisms: Light nuclei molecules

We present full quantum statistical energetics of some electron-light nuclei systems. This is accomplished with the path integral Monte Carlo method. The effects on energetics arising from the change in the nuclear mass are studied. The obtained results may serve as reference data for the multicomponent density functional theory calculations of light nuclei system. In addition, the results reported here will enable better fitting of todays electron-nuclear energy functionals, for which the description of light nuclei is most challenging, in particular

Determining the quality of mathematical software using reference data sets

This paper describes a methodology for evaluating the numerical accuracy of software that performs mathematical calculations. The authors explain how this methodology extends the concept of metrological traceability, which is fundamental to measurement, to include software quality. Overviews of two European Union-funded projects are also presented. The first project developed an infrastructure to allow software to be verified by testing, via the internet, using reference data sets. The primary focus of the project was software used within systems that make physical measurements. The second project, currently underway, explores using this infrastructure to verify mathematical software used within general scientific and engineering disciplines. Publications on using reference data sets for the verification of mathematical software are usually intended for a readership specialising in measurement science or mathematics. This paper is aimed at a more general readership, in particular software quality specialists and computer scientists. Further engagement with experts in these disciplines will be helpful to the continued development of this application of software quality

Static characteristics

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits � Allows responsive temperature monitoring due to integrated temperature sensor � Low conduction losses due to low on-state resistance � Q101 compliant 1.3 Applications � 12 V and 24 V high power motor drives � Automotive and general purpose power switchin

Reference data for phase diagrams of triangular and hexagonal bosonic lattices

We investigate systems of bosonic particles at zero temperature in triangular and hexagonal optical lattice potentials in the framework of the Bose-Hubbard model. Employing the process-chain approach, we obtain accurate values for the boundaries between the Mott insulating phase and the superfluid phase. These results can serve as reference data for both other approximation schemes and upcoming experiments. Since arbitrary integer filling factors g are amenable to our technique, we are able to monitor the behavior of the critical hopping parameters with increasing filling. We also demonstrate that the g-dependence of these exact parameters is described almost perfectly by a scaling relation inferred from the mean-field approximation.Comment: 6 pages, 5 figures, accepted for publication in EP