Stabilization of halide perovskites with silicon compounds for optoelectronic, catalytic, and bioimaging applications

Silicon belongs to group 14 elements along with carbon, germanium, tin, and lead in the periodic table. Similar to carbon, silicon is capable of forming a wide range of stable compounds, including silicon hydrides, organosilicons, silicic acids, silicon oxides, and silicone polymers. These materials have been used extensively in optoelectronic devices, sensing, catalysis, and biomedical applications. In recent years, silicon compounds have also been shown to be suitable for stabilizing delicate halide perovskite structures. These composite materials are now receiving a lot of interest for their potential use in various real‐world applications. Despite exhibiting outstanding performance in various optoelectronic devices, halide perovskites are susceptible to breakdown in the presence of moisture, oxygen, heat, and UV light. Silicon compounds are thought to be excellent materials for improving both halide perovskite stability and the performance of perovskite‐based optoelectronic devices. In this work, a wide range of silicon compounds that have been used in halide perovskite research and their applications in various fields are discussed. The interfacial stability, structure–property correlations, and various application aspects of perovskite and silicon compounds are also analyzed at the molecular level. This study also explores the developments, difficulties, and potential future directions associated with the synthesis and application of perovskite‐silicon compounds. imag

On-glass optoelectronic platform for on-chip detection of DNA

Lab-on-chip are analytical systems which, compared to traditional methods, offer significant reduction of sample, reagent, energy consumption and waste production. Within this framework, we report on the development and testing of an optoelectronic platform suitable for the on-chip detection of fluorescent molecules. The platform combines on a single glass substrate hydrogenated amorphous silicon photosensors and a long pass interferential filter. The design of the optoelectronic components has been carried out taking into account the spectral properties of the selected fluorescent molecule. We have chosen the [Ru(phen)2(dppz)]2+ which exhibits a high fluorescence when it is complexed with nucleic acids in double helix. The on-glass optoelectronic platform, coupled with a microfluidic network, has been tested in detection of double-stranded DNA (dsDNA) reaching a detection limit as low as 10 ng/μL

COMPUTER-GENERATED HOLOGRAM ETCHED IN GAAS FOR OPTICAL INTERCONNECTION OF VLSI CIRCUITS

By integrating, on a wafer plane, GaAs semiconductor optoelectronic modulators and detectors with computer-generated holograms between then, the potential for in-plane interconnections is proposed. We report the fabrication and characterisation of a binary-phase relief hologram etched in a GaAs wafer using an averaged Fresnel zone plate design to focus light to 2 x 2 spots for array interconnection. Efficiencies of 28% for this design of binary CGH etched in GaAs have been achieved, close to the theoretical maximum

Study of optoelectronic switch for satellite-switched time-division multiple access

The use of optoelectronic switching for satellite switched time division multiple access will improve the isolation and reduce the crosstalk of an IF switch matrix. The results are presented of a study on optoelectronic switching. Tasks include literature search, system requirements study, candidate switching architecture analysis, and switch model optimization. The results show that the power divided and crossbar switching architectures are good candidates for an IF switch matrix

Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study

Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD). OFF-state breakdown threshold criteria based on the magnitude of the Schottky-barrier leakage current can be directly applied to TCAD; however, the results obtained are not accurate due to the large uncertainty in the Schottky-barrier parameters and models arising above all in advanced wide-gap semiconductors and to the need of performing high-temperature simulations to improve the numerical convergence of the model. In this paper, we suggest a novel OFF-state breakdown criterion, based on monitoring the magnitude (at the drain edge of the gate) of the electric field component parallel to the current density. The new condition is shown to be consistent with more conventional definitions and to exhibit a significantly reduced sensitivity with respect to physical parameter variation

Application of Graphene within Optoelectronic Devices and Transistors

Scientists are always yearning for new and exciting ways to unlock graphene's true potential. However, recent reports suggest this two-dimensional material may harbor some unique properties, making it a viable candidate for use in optoelectronic and semiconducting devices. Whereas on one hand, graphene is highly transparent due to its atomic thickness, the material does exhibit a strong interaction with photons. This has clear advantages over existing materials used in photonic devices such as Indium-based compounds. Moreover, the material can be used to 'trap' light and alter the incident wavelength, forming the basis of the plasmonic devices. We also highlight upon graphene's nonlinear optical response to an applied electric field, and the phenomenon of saturable absorption. Within the context of logical devices, graphene has no discernible band-gap. Therefore, generating one will be of utmost importance. Amongst many others, some existing methods to open this band-gap include chemical doping, deformation of the honeycomb structure, or the use of carbon nanotubes (CNTs). We shall also discuss various designs of transistors, including those which incorporate CNTs, and others which exploit the idea of quantum tunneling. A key advantage of the CNT transistor is that ballistic transport occurs throughout the CNT channel, with short channel effects being minimized. We shall also discuss recent developments of the graphene tunneling transistor, with emphasis being placed upon its operational mechanism. Finally, we provide perspective for incorporating graphene within high frequency devices, which do not require a pre-defined band-gap.Comment: Due to be published in "Current Topics in Applied Spectroscopy and the Science of Nanomaterials" - Springer (Fall 2014). (17 pages, 19 figures

An Optomechanical Oscillator on a Silicon Chip

The recent observation on radiation-pressure-driven self-sustained oscillation in high-Q optical microresonators has created new possibilities for development of photonic devices that benefit from unique functionalities offered by these “optomechanical oscillators” (OMOs). Here, we review the physics, fundamental characteristics, and potential applications of OMOs using the silica microtoroidal OMO as an example