Constant-Weight Gray Codes for Local Rank Modulation

We consider the local rank-modulation scheme in which a sliding window going over a sequence of real-valued variables induces a sequence of permutations. The local rank-modulation, as a generalization of the rank-modulation scheme, has been recently suggested as a way of storing information in flash memory. We study constant-weight Gray codes for the local rank-modulation scheme in order to simulate conventional multi-level flash cells while retaining the benefits of rank modulation. We provide necessary conditions for the existence of cyclic and cyclic optimal Gray codes. We then specifically study codes of weight 2 and upper bound their efficiency, thus proving that there are no such asymptotically-optimal cyclic codes. In contrast, we study codes of weight 3 and efficiently construct codes which are asymptotically-optimal

Constant-Weight Gray Codes for Local Rank Modulation

We consider the local rank-modulation scheme in which a sliding window going over a sequence of real-valued variables induces a sequence of permutations. Local rank- modulation is a generalization of the rank-modulation scheme, which has been recently suggested as a way of storing information in flash memory. We study constant-weight Gray codes for the local rank- modulation scheme in order to simulate conventional multi-level flash cells while retaining the benefits of rank modulation. We provide necessary conditions for the existence of cyclic and cyclic optimal Gray codes. We then specifically study codes of weight 2 and upper bound their efficiency, thus proving that there are no such asymptotically-optimal cyclic codes. In contrast, we study codes of weight 3 and efficiently construct codes which are asymptotically-optimal. We conclude with a construction of codes with asymptotically-optimal rate and weight asymptotically half the length, thus having an asymptotically-optimal charge difference between adjacent cells

Reliability and Hardware Implementation of Rank Modulation Flash Memory

We review a novel data representation scheme for NAND flash memory named rank modulation (RM), and discuss its hardware implementation. We show that under the normal threshold voltage (Vth) variations, RM has intrinsic read reliability advantage over conventional multiple-level cells. Test results demonstrating superior reliability using commercial flash chips are reviewed and discussed. We then present a read method based on relative sensing time, which can obtain the rank of all cells in the group in one read cycle. The improvement in reliability and read speed enable similar program-and-verify time in RM as that of conventional MLC flash

Rank-Modulation Rewrite Coding for Flash Memories

The current flash memory technology focuses on the cost minimization of its static storage capacity. However, the resulting approach supports a relatively small number of program-erase cycles. This technology is effective for consumer devices (e.g., smartphones and cameras) where the number of program-erase cycles is small. However, it is not economical for enterprise storage systems that require a large number of lifetime writes. The proposed approach in this paper for alleviating this problem consists of the efficient integration of two key ideas: 1) improving reliability and endurance by representing the information using relative values via the rank modulation scheme and 2) increasing the overall (lifetime) capacity of the flash device via rewriting codes, namely, performing multiple writes per cell before erasure. This paper presents a new coding scheme that combines rank-modulation with rewriting. The key benefits of the new scheme include: 1) the ability to store close to 2 bit per cell on each write with minimal impact on the lifetime of the memory and 2) efficient encoding and decoding algorithms that make use of capacity-achieving write-once-memory codes that were proposed recently