1,202 research outputs found

    Jitter and phase noise in ring oscillators

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    A companion analysis of clock jitter and phase noise of single-ended and differential ring oscillators is presented. The impulse sensitivity functions are used to derive expressions for the jitter and phase noise of ring oscillators. The effect of the number of stages, power dissipation, frequency of oscillation, and short-channel effects on the jitter and phase noise of ring oscillators is analyzed. Jitter and phase noise due to substrate and supply noise is discussed, and the effect of symmetry on the upconversion of 1/f noise is demonstrated. Several new design insights are given for low jitter/phase-noise design. Good agreement between theory and measurements is observed

    A general theory of phase noise in electrical oscillators

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    A general model is introduced which is capable of making accurate, quantitative predictions about the phase noise of different types of electrical oscillators by acknowledging the true periodically time-varying nature of all oscillators. This new approach also elucidates several previously unknown design criteria for reducing close-in phase noise by identifying the mechanisms by which intrinsic device noise and external noise sources contribute to the total phase noise. In particular, it explains the details of how 1/f noise in a device upconverts into close-in phase noise and identifies methods to suppress this upconversion. The theory also naturally accommodates cyclostationary noise sources, leading to additional important design insights. The model reduces to previously available phase noise models as special cases. Excellent agreement among theory, simulations, and measurements is observed

    Oscillator phase noise: a tutorial

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    Linear time-invariant (LTI) phase noise theories provide important qualitative design insights but are limited in their quantitative predictive power. Part of the difficulty is that device noise undergoes multiple frequency translations to become oscillator phase noise. A quantitative understanding of this process requires abandoning the principle of time invariance assumed in most older theories of phase noise. Fortunately, the noise-to-phase transfer function of oscillators is still linear, despite the existence of the nonlinearities necessary for amplitude stabilization. In addition to providing a quantitative reconciliation between theory and measurement, the time-varying phase noise model presented in this tutorial identifies the importance of symmetry in suppressing the upconversion of 1/f noise into close-in phase noise, and provides an explicit appreciation of cyclostationary effects and AM-PM conversion. These insights allow a reinterpretation of why the Colpitts oscillator exhibits good performance, and suggest new oscillator topologies. Tuned LC and ring oscillator circuit examples are presented to reinforce the theoretical considerations developed. Simulation issues and the accommodation of amplitude noise are considered in appendixes

    Reduction of the 1/f Noise Induced Phase Noise in a CMOS Ring Oscillator by Increasing the Amplitude of Oscillation

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    Spectrum measurement results of a CMOS ring oscillator are presented that show a 10 dB decrease in 1/f noise induced phase noise at a 2 dB increase in carrier power. Simple ring oscillator theory predicts that the 1/f noise induced phase noise is independent of carrier power. It is shown that an increase in the amplitude of oscillation is accompanied by a reduction of the intrinsic 1/f noise of the periodically switched MOS transistors in the ring. A net reduction of the 1/f noise of a periodically switched NMOS transistor of more than 12 dB is measured in the baseban

    Analog IC Design at the University of Twente

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    This article describes some recent research results from the IC Design group of the University of Twente, located in Enschede, The Netherlands.\ud \ud Our research focuses on analog CMOS circuit design with emphasis on high frequency and broadband circuits. With the trend of system integration in mind, we try to develop new circuit techniques that enable the next steps in system integration in nanometer CMOS technology. Our research funding comes from industry, as well as from governmental organizations. We aim to find fundamental solutions for practical problems of integrated circuits realized in industrial Silicon technologies.\ud \ud CMOS IC technology is dictated by optimal cost and performance of digital circuits and is certainly not optimized for nice analog behavior. As analog designers, we do not have the illusion to be able to change the CMOS technology, so we have to "live with it" and solve the problems by design. In this article several examples will be shown, where problematic analog behavior, such as noise and distortion, can be tackled with new circuit design techniques. These circuit techniques are developed in such a way that they do benefit from the modern technology and thus enable further integration. This way we can improve various analog building blocks for wireless, wire-line and optical communication. Below some examples are given.\ud \u

    CMOS ring oscillator delay cell performance: a comparative study

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    A common voltage-controlled oscillator (VCO) architecture used in the phase locked loop (PLL) is the ring oscillator (RO). RO consist of number of inverters cascaded together as the input of the first stage connected to the output of the last stage. It is important to design the RO to be work at desired frequency depend on application with low power consumption. This paper presents a review the performance evaluation of different delay cell topologies the implemented in the ring oscillator. The various topologies analyzed includes current starved delay cell, differential delay cell and current follower cell. Performance evaluation includes frequency range, frequency stability, phase noise and power consumption had been reviewed and comparison of different topologies has been discussed. It is observed that starved current delay cell have lower power consumption and the different of the frequency range is small as compared to other type of delay cell

    Design of 5.1 GHz ultra-low power and wide tuning range hybrid oscillator

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    The objective of the proposed work is to demonstrate the use of a hybrid approach for the design of a voltage-controlled oscillator (VCO) which can lead to higher performance. The performance is improved in terms of the tuning range, frequency of oscillation, voltage swing, and power consumption. The proposed hybrid VCO is designed using an active load common source amplifier and current starved inverter that are cascaded alternatively to achieve low power consumption. The proposed VCO achieves a measured phase noise of -74 dBc/Hz and a figure of merit (FOM) of -152.6 dBc/Hz at a 1 MHz offset when running at 5.1 GHz frequency. The hybrid current starved-current starved VCO (CS-CS VCO) consumes a power of 289 µW using a 1.8 V supply and attains a wide tuning range of 96.98%. Hybrid VCO is designed using 0.09 µm complementary metal–oxide–semiconductor (CMOS) technology. To justify the robustness, reliability, and scalability of the circuit different corner analysis is performed through 500 runs of Monte-Carlo simulation

    Cmos Rotary Traveling Wave Oscillators (Rtwos)

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    Rotary Traveling Wave Oscillator (RTWO) represents a transmission line based technology for multi-gigahertz multiple phase clock generation. RTWO is known for providing low jitter and low phase noise signals but the issue of high power consumption is a major drawback in its application. Direction of wave propagation is random and is determined by the least resistance path in the absence of an external direction control circuit. The objective of this research is to address some of the problems of RTWO design, including high power consumption, uncertainty of propagation direction and optimization of design variables. Included is the modeling of RTWO for sensitivity, phase noise and power analysis. Research objectives were met through design, simulation and implementation. Different designs of RTWO in terms of ring size and number of amplifier stages were implemented and tested. Design tools employed include Agilent ADS, Cadence EDA, SONNET and Altium PCB Designer. Test chip was fabricated using IBM 0.18 μm RF CMOS technology. Performance measures of interest are tuning range, phase noise and power consumption. Agilent ADS and SONNET were used for electromagnetic modeling of transmission lines and electromagnetic field radiation. For each design, electromagnetic simulations were carried out followed by oscillation synthesis based on circuit simulation in Cadence Spectre. RTWO frequencies between 2 GHz and 12 GHz were measured based on the ring size of transmission lines. Simulated microstrip transmission line segments had a quality factor between 5.5 and 18. For the various designs, power consumption ranged from 20 mW to 120 mW. Measured phase noise ranged between -123 dBc/Hz and -87 dBc/Hz at 1 MHz offset. Development also included the design of a wide band buffer and a printed circuit board with high signal integrity for accurate measurement of oscillation frequency and other performance measures. Simulated performance, schematics and measurement results are presented
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