Leveraging the Intrinsic Switching Behaviors of Spintronic Devices for Digital and Neuromorphic Circuits

With semiconductor technology scaling approaching atomic limits, novel approaches utilizing new memory and computation elements are sought in order to realize increased density, enhanced functionality, and new computational paradigms. Spintronic devices offer intriguing avenues to improve digital circuits by leveraging non-volatility to reduce static power dissipation and vertical integration for increased density. Novel hybrid spintronic-CMOS digital circuits are developed herein that illustrate enhanced functionality at reduced static power consumption and area cost. The developed spin-CMOS D Flip-Flop offers improved power-gating strategies by achieving instant store/restore capabilities while using 10 fewer transistors than typical CMOS-only implementations. The spin-CMOS Muller C-Element developed herein improves asynchronous pipelines by reducing the area overhead while adding enhanced functionality such as instant data store/restore and delay-element-free bundled data asynchronous pipelines. Spintronic devices also provide improved scaling for neuromorphic circuits by enabling compact and low power neuron and non-volatile synapse implementations while enabling new neuromorphic paradigms leveraging the stochastic behavior of spintronic devices to realize stochastic spiking neurons, which are more akin to biological neurons and commensurate with theories from computational neuroscience and probabilistic learning rules. Spintronic-based Probabilistic Activation Function circuits are utilized herein to provide a compact and low-power neuron for Binarized Neural Networks. Two implementations of stochastic spiking neurons with alternative speed, power, and area benefits are realized. Finally, a comprehensive neuromorphic architecture comprising stochastic spiking neurons, low-precision synapses with Probabilistic Hebbian Plasticity, and a novel non-volatile homeostasis mechanism is realized for subthreshold ultra-low-power unsupervised learning with robustness to process variations. Along with several case studies, implications for future spintronic digital and neuromorphic circuits are presented

Accelerating Time Series Analysis via Processing using Non-Volatile Memories

Time Series Analysis (TSA) is a critical workload for consumer-facing devices. Accelerating TSA is vital for many domains as it enables the extraction of valuable information and predict future events. The state-of-the-art algorithm in TSA is the subsequence Dynamic Time Warping (sDTW) algorithm. However, sDTW's computation complexity increases quadratically with the time series' length, resulting in two performance implications. First, the amount of data parallelism available is significantly higher than the small number of processing units enabled by commodity systems (e.g., CPUs). Second, sDTW is bottlenecked by memory because it 1) has low arithmetic intensity and 2) incurs a large memory footprint. To tackle these two challenges, we leverage Processing-using-Memory (PuM) by performing in-situ computation where data resides, using the memory cells. PuM provides a promising solution to alleviate data movement bottlenecks and exposes immense parallelism. In this work, we present MATSA, the first MRAM-based Accelerator for Time Series Analysis. The key idea is to exploit magneto-resistive memory crossbars to enable energy-efficient and fast time series computation in memory. MATSA provides the following key benefits: 1) it leverages high levels of parallelism in the memory substrate by exploiting column-wise arithmetic operations, and 2) it significantly reduces the data movement costs performing computation using the memory cells. We evaluate three versions of MATSA to match the requirements of different environments (e.g., embedded, desktop, or HPC computing) based on MRAM technology trends. We perform a design space exploration and demonstrate that our HPC version of MATSA can improve performance by 7.35x/6.15x/6.31x and energy efficiency by 11.29x/4.21x/2.65x over server CPU, GPU and PNM architectures, respectively