Finding the optimum activation energy in DNA breathing dynamics: A Simulated Annealing approach

We demonstrate how the stochastic global optimization scheme of Simulated Annealing can be used to evaluate optimum parameters in the problem of DNA breathing dynamics. The breathing dynamics is followed in accordance with the stochastic Gillespie scheme with the denaturation zones in double stranded DNA studied as a single molecule time series. Simulated Annealing is used to find the optimum value of the activation energy for which the equilibrium bubble size distribution matches with a given value. It is demonstrated that the method overcomes even large noise in the input surrogate data.Comment: 9 pages, 4 figures, iop article package include

¿Quo Vadis? Reclutamiento y Contratacion de Trabajadores Migrantes y su Acceso a la Seguridad Social: dinamicas de los sistemas de trabajo temporal migratorio en Norte y Centroamerica

Different regions and countries of the world face a serious need to design and make use of necessary policies and resources to better manage worker migration, thus ensuring the welfare and human rights of these people who, in the end, are of benefit to their society of origin, as well as the receiving society. Although international labor migration may turn out to be productive for many people, many of these migrant workers have unsatisfactory living and working conditions. While it is likely that their labor conditions are better than in their own country, in many cases they are inferior to the working conditions of nationals in their receiving country. Despite international standards to protect migrant workers, their labor rights are frequently abused, especially if they have immigrated in an irregular fashion. In this context, INEDIM took on the task of developing an integral and comprehensive document regarding different migrant worker and visa systems in Central and North America.The work presented here holds enormous value for delving in-depth to the forms of management of temporary migrant workers, as well as their access and guarantees to social and labor protection in North and Central America. This report addresses the problem of management of labor migrant flows among countries in our region. This study is based on an ordered and scrupulous methodology in which different migration systems and visa schemes for the hiring of temporary migrant workers are analyzed from the perspective of protection, respect for, guarantees and promotion of human rights. The study analyzes six systems that seek to regulate temporary migration in the region along the Central and North American corridor. The countries involved in these six systems are El Salvador, Guatemala, Mexico, Canada, the United States, Costa Rica and Nicaragua. The authors carry out a thorough and well-structured study based on two focuses of analysis: first, the processes for recruiting and contracting migrant workers and secondly, access to social protection for temporary migrant workers by means of the right to social security. From these two focuses, the authors are able to identify and demonstrate structural insufficiencies and gaps in the analyzed systems, which should guarantee labor security and social security for these workers

A Radiation hard bandgap reference circuit in a standard 0.13um CMOS Technology

With ongoing CMOS evolution, the gate-oxide thickness steadily decreases, resulting in an increased radiation tolerance of MOS transistors. Combined with special layout techniques, this yields circuits with a high inherent robustness against X-rays and other ionizing radiation. In bandgap voltage references, the dominant radiation-susceptibility is then no longer associated with the MOS transistors, but is dominated by the diodes. This paper gives an analysis of radiation effects in both MOSdevices and diodes and presents a solution to realize a radiation-hard voltage reference circuit in a standard CMOS technology. A demonstrator circuit was implemented in a standard 0.13 m CMOS technology. Measurements show correct operation with supply voltages in the range from 1.4 V down to 0.85 V, a reference voltage of 405 mV 7.5 mV ( = 6mVchip-to-chip statistical spread), and a reference voltage shift of only 1.5 mV (around 0.8%) under irradiation up to 44 Mrad (Si)

Productivity in endowments : sectoral evidence for Hong Kong's aggregate growth

The author provides sectoral evidence that sheds new light on the current debate regarding the sources of growth of the East Asian miracle. The author tests both the productivity-driven and endowment-driven hypotheses using Hong Kong's sectoral data. The results show that most of the growth in the services sector is driven by the rapidly accumulating capital endowments, and not by productivity growth. In addition, productivity growth in the manufacturing sector is also unimpressive. The manufacturing sector is more labor intensive and its growth is hindered by the reallocation of resources into the services sector as a result of the growth of capital endowments and imports. Overall, sectoral evidence supports the endowment-driven hypothesis for Hong Kong's aggregate growth.Water and Industry,Banks&Banking Reform,Environmental Economics&Policies,Economic Theory&Research,Industrial Management,Economic Theory&Research,Environmental Economics&Policies,Banks&Banking Reform,Economic Growth,Industrial Management

A sub-1-V Bandgap Voltage Reference in 32nm FinFET Technology

The bulk CMOS technology is expected to scale down to about 32nm node and likely the successor would be the FinFET. The FinFET is an ultra-thin body multi-gate MOS transistor with among other characteristics a much higher voltage gain compared to a conventional bulk MOS transistor [1]. Bandgap reference circuits cannot be directly ported from bulk CMOS technologies to SOI FinFET technologies, because both conventional diodes cannot be realized in thin SOI layers and also, area-efficient resistors are not readily available in processes with only metal(lic) gates. In this paper, a sub-1V bandgap reference circuit is implemented in a 32nm SOI FinFET technology, with an architecture that significantly reduces the required total resistance value

A quantum computational semantics for epistemic logical operators. Part I: epistemic structures

Some critical open problems of epistemic logics can be investigated in the framework of a quantum computational approach. The basic idea is to interpret sentences like “Alice knows that Bob does not understand that π is irrational” as pieces of quantum information (generally represented by density operators of convenient Hilbert spaces). Logical epistemic operators (to understand, to know. . .) are dealt with as (generally irreversible) quantum operations, which are, in a sense, similar to measurement-procedures. This approach permits us to model some characteristic epistemic processes, that concern both human and artificial intelligence. For instance, the operation of “memorizing and retrieving information” can be formally represented, in this framework, by using a quantum teleportation phenomenon