Investigation of thermal resistance and power consumption in Ga-doped indium oxide (In2O3) nanowire phase change random access memory

The resistance stability and thermal resistance of phase change memory devices using similar to 40 nm diameter Ga-doped In2O3 nanowires (Ga:In2O3 NW) with different Ga-doping concentrations have been investigated. The estimated resistance stability (R(t)/R-0 ratio) improves with higher Ga concentration and is dependent on annealing temperature. The extracted thermal resistance (R-th) increases with higher Ga-concentration and thus the power consumption can be reduced by similar to 90% for the 11.5% Ga: In2O3 NW, compared to the 2.1% Ga: In2O3 NW. The excellent characteristics of Ga-doped In2O3 nanowire devices offer an avenue to develop low power and reliable phase change random access memory applications. (C) 2014 AIP Publishing LLC.X113sciescopu

Electrical phase change of CVD-grown Ge-Sb-Te thin film device

A prototype Ge-Sb-Te thin film phase-change memory device has been fabricated and reversible threshold and phase change switching demonstrated electrically, with a threshold voltage of 1.5 – 1.7 V. The Ge-Sb-Te thin film was fabricated by chemical vapour deposition (CVD) at atmospheric pressure using GeCl4, SbCl5, and Te precursors with reactive gas H2 at reaction temperature 780 °C and substrate temperature 250 °C. The surface morphology and composition of the CVD-grown Ge-Sb-Te thin film has been characterized by scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX). The CVD-grown Ge-Sb-Te thin film shows promise for the phase change memory applications

Ultrafast optical manipulation of atomic arrangements in chalcogenide alloy memory materials

A class of chalcogenide alloy materials that shows significant changes in optical properties upon an amorphous-to-crystalline phase transition has lead to development of large data capacities in modern optical data storage. Among chalcogenide phase-change materials, Ge2Sb2Te5 (GST) is most widely used because of its reliability. We use a pair of femtosecond light pulses to demonstrate the ultrafast optical manipulation of atomic arrangements from tetrahedral (amorphous) to octahedral (crystalline) Ge-coordination in GST superlattices. Depending on the parameters of the second pump-pulse, ultrafast nonthermal phase-change occurred within only few-cycles (~ 1 ps) of the coherent motion corresponding to a GeTe4 local vibration. Using the ultrafast switch in chalcogenide alloy memory could lead to a major paradigm shift in memory devices beyond the current generation of silicon-based flash-memory.Comment: 11 pages, 7 figures, accepted for publication in Optics Expres

RRAM variability and its mitigation schemes

Emerging technologies such as RRAMs are attracting significant attention due to their tempting characteristics such as high scalability, CMOS compatibility and non-volatility to replace the current conventional memories. However, critical causes of hardware reliability failures, such as process variation due to their nano-scale structure have gained considerable importance for acceptable memory yields. Such vulnerabilities make it essential to investigate new robust design strategies at the circuit system level. In this paper we have analyzed the RRAM variability phenomenon, its impact and variation tolerant techniques at the circuit level. Finally a variation-monitoring circuit is presented that discerns the reliable memory cells affected by process variability.Peer ReviewedPostprint (author's final draft

Realization of a reversible switching in TaO2 polymorphs via Peierls distortion for resistance random access memory

Transition-metal-oxide based resistance random access memory is a promising candidate for next-generation universal non-volatile memories. Searching and designing appropriate new materials used in the memories becomes an urgent task. Here, a new structure with the TaO2 formula was predicted using evolutionary algorithms in combination with first-principles calculations. This new structure having a triclinic symmetry (T-TaO2) is both energetically and dynamically more favorable than the commonly believed rutile structure (R-TaO2). Our hybrid functional calculations show that T-TaO2 is a semiconductor with a band gap of 1.0 eV, while R-TaO2 is a metallic conductor. This large difference in electrical property makes TaO2 a potential candidate for resistance random access memory (RRAM). Furthermore, we have shown that T-TaO2 is actually a Peierls distorted R-TaO2 phase and the transition between these two structures is via a directional displacement of Ta atoms. The energy barrier for the reversible phase transition from R-TaO2 to T-TaO2 is 0.19 eV/atom and the other way around is 0.23 eV/atom, suggesting low power consumption for the resistance switch. The present findings provide a new mechanism for the resistance switch and will also stimulate experimental work to fabricate tantalum oxides based RRAM

Thermally stable low current consuming gallium and germanium chalcogenides for consumer and automotive memory applications

The phase change technology behind rewritable optical disks and the latest generation of electronic memories has provided clear commercial and technological advances for the field of data storage, by virtue of the many well known attributes, in particular scaling, cycling endurance and speed, that chalcogenide materials offer. While the switching power and current consumption of established germanium antimony telluride based memory cells are a major factor in chip design in real world applications, often the thermal stability of the device can be a major obstacle in the path to the full commercialisation. In this work we describe our research in material discovery and characterization for the purpose of identifying more thermally stable chalcogenides for applications in PCRAM

Bias dependent specic contact resistance of phase change material to metal contacts

Knowledge of contact resistance of phase change materials (PCM) to metal electrodes is important for scaling, device modeling and optimization of phase change random access memory (PCRAM) cells. In this article, we report the systematic determination of the speci_c contact resistance (_c) with voltage bias for doped Sb2Te to TiW metal electrodes. These data are reported for both the amorphous and the crystalline state of the PCM

Phase-change technologies: from PCRAM to probe-storage to processors

Phase-change materials based on chalcogenide alloys, for example GeSbTe and AgInSbTe, show remarkable properties such as: the ability to be crystallized by pulses in the (hundreds of) femtoseconds region while at the same time withstanding spontaneous crystallization for many years; the ability to be cycled between phases 1012 times or more; the existence of a huge contrast between the refractive index of the phases; the existence of a huge electrical contrast between phases. These remarkable properties make phase-change materials suitable for a wide range of optical and electrical applications, for optical and electrical memories, for optical routers, for optical and electrical processors. In this paper we describe theoretical and experimental investigations of some of the key application areas, with a view to providing insights into the possible future use of phase-change materials