Stacking-symmetry governed second harmonic generation in graphene trilayers

Crystal symmetry plays a central role in governing a wide range of fundamental physical phenomena. One example is the nonlinear optical second harmonic generation (SHG), which requires inversion symmetry breaking. Here we report a unique stacking-induced SHG in trilayer graphene, whose individual monolayer sheet is centrosymmetric. Depending on layer stacking sequence, we observe a strong optical SHG in Bernal (ABA) stacked non-centrosymmetric trilayer, while it vanishes in rhombohedral (ABC) stacked one which preserves inversion symmetry. This highly contrasting SHG due to the distinct stacking symmetry enables us to map out the ABA and ABC crystal domains in otherwise homogeneous graphene trilayer. The extracted second order nonlinear susceptibility of the ABA trilayer is surprisingly large, comparable to the best known 2D semiconductors enhanced by excitonic resonance. Our results reveal a novel stacking order induced nonlinear optical effect, as well as unleash the opportunity for studying intriguing physical phenomena predicted for stacking-dependent ABA and ABC graphene trilayers.Comment: To appear in Science Advance

Leaf Micromorphology Aids Taxonomic Delineation within the Hypervariable Genus Metrosideros (Myrtaceae) on O\u27ahu

Variation in leaf micromorphology can aid delimitation of taxonomically difficult groups. The woody genus Metrosideros (Myrtaceae) dominates Hawai\u27i\u27s native forests and comprises striking, predominantly infraspecific, macromorphological variation, including many forms unrecognized in current taxonomic treatments. On taxonomically rich O\u27ahu, 10 taxa (varieties or unnamed morphotypes of M. polymorpha and other species) occur in a predictable sequence with overlapping ranges from low to high elevation along the numerous leeward ridges of the Ko\u27olau Range. We used scanning electron and light microscopy to examine mature, nonsenescing sun leaves from each of these 10 taxa. Parametric and nonparametric tests were used to compare stomatal complex (SC) traits and those of a newly described secretory structure (SS) across taxa. Correlations among traits and discriminant analyses were also done. Density and length of SCs were inversely related overall, and both measures varied significantly across taxa. Although abaxial SSs were consistently present only in the two highest-elevation glabrous taxa, adaxial SSs were present in all 10 taxa. Length and density of adaxial SSs and density of abaxial SSs varied across taxa, and densities of both SCs and SSs were greatest at high elevation. Combined, the SC and SS traits differentiated 100% of four glabrous varieties and two of three pubescent varieties of M. polymorpha. Variation in leaf micromorphology, including presence and density of a newly described SS, aids delimitation of closely related Hawaiian Metrosideros taxa and may refilect differential local adaptation across a heterogeneous landscape

Valley-Layer Coupling: A New Design Principle for Valleytronics

We introduce the concept of valley-layer coupling (VLC) in two-dimensional materials, where the low-energy electronic states in the emergent valleys have valley-contrasted layer polarization such that each state is spatially localized on the top or bottom super-layer. The VLC enables a direct coupling between valley and gate electric field, opening a new route towards electrically controlled valleytronics. We analyze the symmetry requirements for the system to host VLC, demonstrate our idea via first-principles calculations and model analysis of a concrete 2D material example, and show that an electric, continuous, wide-range, and switchable control of valley polarization can be achieved by VLC. Furthermore, we find that systems with VLC can exhibit other interesting physics, such as valley-contrasting linear dichroism and optical selection of the electric polarization of interlayer excitons.Comment: 6 pages, 4 figure

Effect of processing parameters on reaction bonding of silicon nitride

Reaction bonded silicon nitride was developed. The relationship between the various processing parameters and the resulting microstructures was to design and synthesize reaction bonded materials with improved room temperature mechanical properties

Routine characterization and interpretation of complex alkali feldspar intergrowths

Almost all alkali feldspar crystals contain a rich inventory of exsolution, twin, and domain microtextures that form subsequent to crystal growth and provide a record of the thermal history of the crystal and often of its involvement in replacement reactions, sometimes multiple. Microtextures strongly influence the subsequent behavior of feldspars at low temperatures during diagenesis and weathering. They are central to the retention or exchange of trace elements and of radiogenic and stable isotopes. This review is aimed at petrologists and geochemists who wish to use alkali feldspar microtextures to solve geological problems or who need to understand how microtextures influence a particular process. We suggest a systematic approach that employs methods available in most well founded laboratories. The crystallographic relationships of complex feldspar intergrowths were established by the 1970s, mainly using single-crystal X-ray diffraction, but such methods give limited information on the spatial relationships of the different elements of the microtexture, or of the mode and chronology of their formation, which require the use of microscopy. We suggest a combination of techniques with a range of spatial resolution and strongly recommend the use of orientated sections. Sections cut parallel to the perfect (001) and (010) cleavages are the easiest to locate and most informative. Techniques described are light microscopy; scanning electron microscopy using both backscattered and secondary electrons, including the use of surfaces etched in the laboratory; electron-probe microanalysis and analysis by energy-dispersive spectrometry in a scanning electron microscope; transmission electron microscopy. We discuss the use of cathodoluminescence as an auxiliary technique, but do not recommend electron-backscattered diffraction for feldspar work. We review recent publications that provide examples of the need for great care and attention to pre-existing work in microtextural studies, and suggest several topics for future work

Transport properties and asymmetric scattering in Ba1−x_{1-x}Kx_xFe2_2As2_2 single crystals compared to the electron doped counterparts Ba(Fe1−x_{1-x}Cox_{x})2_{2}As2_{2}}

Resistivity, Hall effect and magnetoresistance have been investigated systematically on single crystals of Ba$_{1-x}$K$_x$Fe$_2$As$_2$ ranging from undoped to optimally doped regions. A systematic evolution of the quasiparticle scattering has been observed. It is found that the resistivity in the normal state of Ba$_{1-x}$K$_x$Fe$_2$As$_2$ is insensitive to the potassium doping concentration, which is very different from the electron doped counterpart Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$, where the resistivity at 300 K reduces to half value of the undoped one when the system is optimally doped. In stark contrast, the Hall coefficient R$_H$ changes suddenly from a negative value in the undoped sample to a positive one with slight K-doping, and it keeps lowering with further doping. We interpret this dichotomy due to the asymmetric scattering rate in the hole and the electron pockets with much higher mobility of the latter. The magnetoresistivity shows also a non-monotonic doping dependence indicating an anomalous feature at about 80 K to 100 K, even in the optimally doped sample, which is associated with a possible pseudogap feature. In the low temperature region, it seems that the resistivity has the similar values when superconductivity sets in disregarding the different T$_c$ values, which indicates a novel mechanism of the superconductivity. A linear feature of resistivity $\rho_{ab}$ vs. $T$ was observed just above $T_c$ for the optimally doped sample, suggesting a quantum criticality.Comment: 7 page, 5 figur

Carrier and polarization dynamics in monolayer MoS2

In monolayer MoS2 optical transitions across the direct bandgap are governed by chiral selection rules, allowing optical valley initialization. In time resolved photoluminescence (PL) experiments we find that both the polarization and emission dynamics do not change from 4K to 300K within our time resolution. We measure a high polarization and show that under pulsed excitation the emission polarization significantly decreases with increasing laser power. We find a fast exciton emission decay time on the order of 4ps. The absence of a clear PL polarization decay within our time resolution suggests that the initially injected polarization dominates the steady state PL polarization. The observed decrease of the initial polarization with increasing pump photon energy hints at a possible ultrafast intervalley relaxation beyond the experimental ps time resolution. By compensating the temperature induced change in bandgap energy with the excitation laser energy an emission polarization of 40% is recovered at 300K, close to the maximum emission polarization for this sample at 4K.Comment: 7 pages, 7 figures including supplementary materia