88,977 research outputs found
GaN/AlN Multiple Quantum Wells and Nitride-Based Waveguide Structures for Ultrafast All-Optical Switch Utilizing Intersubband Transition
Intersubband transition (ISBT) in multiple quantum wells (MQW) has drawn much attention for ultrafast optoelectronic devices owing to its wide wavelength-tunability and extremely fast energy relaxation process. Recently, the extension of ISBT wavelength to near-infrared wavelength, especially 1.55 μm, is of particular interest because such wavelength is vital for the development of ultrafast photonic devices for silica-fiber-based optical-communication networks. Among various materials proposed for intersubband transition at 1.55 μm, GaN/AlN MQW structures are promising due to their large conduction band offset of approximately 2 eV. Furthermore, the large electron effective mass and the large LO phonon energy in nitrides make their intersubband relaxation extremely fast in the order of sub-picoseconds. This makes intersubband transition in nitrides immensely interesting for the development of ultrafast photonic devices operating at a bit rate higher than 1 Tb/s.//The intersubband transition at 1.55 μm and shorter wavelengths have been achieved by molecular beam epitaxy (MBE) with the shortest wavelength of 1.08 μm. On the other hand, growth by metalorganic vapor phase epitaxy (MOVPE) has not yielded satisfactory results as the shortest ISBT wavelength reported is merely 2.4 μm. The demonstration of 1.55-μm ISBT by MOVPE, however, is still attractive since much better crystalline quality for device fabrication can be achieved. Moreover, MOVPE also has another advantage over MBE in industrial point of view. Indeed, the ultrafast optical switching utilizing intersubband transition has been demonstrated by MBE-grown GaN ridge waveguide structure with a bit rate higher than 1 Tb/s. However, such device requires optical-pulse switching energy higher than 10pJ/μm2 to utilize the saturable intersubband absorption, which is still too large for the applications in conventional optical communication networks. Reduction of the switching energy is therefore another important issue for the intersubband transition devices. In order to reduce the switching energy, not only the waveguide fabrication process, but also the epitaxial growth technique and the device structure have to be improved.//In this dissertation, the GaN/AlN multiple quantum wells and nitride-based waveguide structures are studied and fabricated for the applications of ultrafast all-optical switch utilizing intersubband transition. The ultrafast intersubband transition device is realized by using AlN waveguide structure with GaN/AlN quantum wells. This AlN-waveguide-based intersubband transition device can operate in the optical communication wavelength range, covering 1.3 μm, the shortest wavelength ever demonstrated for the intersubband transition devices.//In order to perform epitaxial growth of such structure with high quality, MOVPE is more preferable than MBE because the AlN layer can be grown with much better quality by the MOVPE. However, since the MOVPE growth of GaN/AlN MQW for the 1.55-μm ISBT is very difficult, the AlN waveguide structure was fabricated with a combination of both MOVPE and MBE growth techniques: MOVPE growth for AlN buffer layer and MBE re-growth for GaN/AlN multiple quantum wells. With this combination, the high quality waveguide with intersubband absorption in a wavelength range of 1.3-1.55 μm is achieved.//In addition to the improvement in the epitaxial growth technique, this dissertation also discusses on the problems in growing the waveguide structure of both MOVPE and MBE. Moreover, the design and fabrication of nitride-based waveguide structures are studied in details to improve the waveguide quality. The high-optical-confinement waveguide structures are proposed and successfully fabricated for the first time thanks to the successful demonstration of epitaxial growth and the improvement of fabrication process. Additionally, a new waveguide characterization method using the supercontinuum light source is also proposed and demonstrated. With this new characterization method, not only are the direct measurements of intersubband absorption in waveguides realized, but the problems in waveguide quality of the MBE-grown waveguide are also revealed. This provides very useful information for the improvement of fabrication process, especially the epitaxial growth process. The achievements in each area of epitaxial growth, waveguide fabrication process, and characterization, have made contributions to the improvement of waveguide characteristic, leading to the successful demonstration of the first AlN-waveguide-based intersubband transition devices with high performance.報告番号: 甲21171 ; 学位授与年月日: 2006-03-23 ; 学位の種別: 課程博士 ; 学位の種類: 博士(工学) ; 学位記番号: 博工第6261号 ; 研究科・専攻: 工学系研究科電子工学専
Time Protection: the Missing OS Abstraction
Timing channels enable data leakage that threatens the security of computer
systems, from cloud platforms to smartphones and browsers executing untrusted
third-party code. Preventing unauthorised information flow is a core duty of
the operating system, however, present OSes are unable to prevent timing
channels. We argue that OSes must provide time protection in addition to the
established memory protection. We examine the requirements of time protection,
present a design and its implementation in the seL4 microkernel, and evaluate
its efficacy as well as performance overhead on Arm and x86 processors
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Characterization of a 50kW Inductively Coupled Plasma Torch for Testing of Ablative Thermal Protection Materials Using Non-Air Gases
Thermal protection systems have been a major area of study since the advent of space flight, but recent efforts towards crewed spaceflight missions have placed a new importance on the development of such systems. The 50 kW Inductively Coupled Plasma (ICP) Torch Facility at The University of Texas at Austin allows for rapid testing of high-temperature aerospace materials essential to the development of thermal protection systems in planetary re-entry applications. This ICP Torch Facility has been previously characterized using air as the test gas. However, planets of interest for future exploration have atmospheric compositions that differ from air, so testing heat shield materials in the presence of other gases is critical. To address this disparity between tested and actual environment, the current work characterizes the torch using various combinations of argon, CO2, and N2 by determining its operational range at various power settings, mass flow rates, and mixtures these gases. At each setting, the cold-wall heat flux is also measured to determine the range the torch is able to provide. Measurements indicate that using pure Ar gives the torch the largest operating range with regard to power setting and gas injection mass flow rate, and mixing argon into other gases drastically increases the stable operating range compared to the pure gas. Pure CO2 does not form a stable plasma discharge, but a mixture of 50% argon and 50% CO2 (by mass) provides stable operation up to 40 slpm total gas flow rate with a maximum heat flux of 98 W/cm2. Smaller percentages of CO2 allow the cold-wall heat flux to be increased to 110 W/cm2. Pure N2 forms a stable plasma discharge, but the operating range is very limited, providing stable operation up to 20 slpm total gas flow rate with a maximum heat flux of 110 W/cm2.Aerospace Engineering and Engineering Mechanic
Prison Privatization: Driving Influences and Performance Evaluation
United States conservatism and neoliberalism have created a market for prison privatization. The business of making money from incarcerated bodies is in direct conflict with the goals of the justice system. Driving economic and political forces are examined and used to explain the rising prison-industrial complex. Private prison performance is measured by recidivism, cost, inmate rights, and quality of confinement. This paper suggests that prison privatization must be reformed or abolished to improve the corrections system in the United States
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