C.V.D. annual report: January, 1967 research project ru27-1 : analogue study of semiconductor device structures

The e::tension of the resistance network analogue method to the study of a M.O.S.T. structure is described. By means of an iterative technique, data regarding channel current, field distribution, surface charge and position of pinch-off point as function of gate and drain voltagen can be obtained which do not involve the usual 'gradual' channel approximation Results for a particular device geometry are presented. A discussion of a digital computer approach to the solution of semiconductor device current flow problems is included, together with preliminary results

Application of boundary integral method to elastoplastic analysis of V-notched beams

The boundary integral equation method was applied in the solution of the plane elastoplastic problem. The use of this method was illustrated by obtaining stress and strain distributions for a number of specimens with a single-edge notch and subjected to pure bending. The boundary integral equation method reduced the inhomogeneous biharmonic equation to two coupled Fredholm-type integral equations. These integral equations were replaced by a system of simultaneous algebraic equations and solved numerically in conjunction with a method of successive elastic solutions

Physical processes associated with current collection by plasma contactors

Recent flight data confirms laboratory observations that the release of neutral gas increases plasma sheath currents. Plasma contactors are devices which release a partially ionized gas in order to enhance the current flow between a spacecraft and the space plasma. Ionization of the expellant gas and the formation of a double layer between the anode plasma and the space plasma are the dominant physical processes. A theory is presented of the interaction between the contactor plasma and the background plasma. The conditions for formation of a double layer between the two plasmas are derived. Double layer formation is shown to be a consequence of the nonlinear response of the plasmas to changes in potential. Numerical calculations based upon this model are compared with laboratory measurements of current collection by hollow cathode-based plasma contactors

LSI arrays for space stations

Two approaches have been taken to study CCD's and some of their fundamental limitations. First a numerical analysis approach has been developed to solve the coupled transport and Poisson's equation for a thorough analysis of charge transfer in a CCD structure. The approach is formulated by treating the minority carriers as a surface distribution at the Si-SiO2 interface and setting up coupled difference equations for the charge and the potential. The SOR method is proposed for solving the two dimensional Poisson's equation for the potential. Methods are suggested for handling the discontinuities to improve convergence. Second, CCD shift registers were fabricated with parameters which should allow complete charge transfer independent of the transfer electrode gap width. A test instrument was designed and constructed which can be used to test this, or any similar, three phase CCD shift register

A Mechanical Model for Elastic Fiber Microbuckling

A two-dimensional mechanical model is presented to predict the compressive strength of unidirectional fiber composites using technical beam theory and classical elasticity. First, a single fiber resting on a matrix half-plane is considered. Next, a more elaborate analysis of a uniformly laminated, unidirectional fiber composite half-plane is presented. The model configuration incorporates a free edge which introduces a buckling mode that originates at the free edge and decays into the interior of the half-plane. It is demonstrated that for composites of low volume fraction (<0.3), this decay mode furnishes values of buckling strain that are below the values predicted by the Rosen (1965) model. At a higher volume fraction the buckling mode corresponds to a half wavelength that is in violation of the usual assumptions of beam theory. Causes for deviations of the model prediction from existing experimental results are discussed

A study of trends and techniques for space base electronics

The use of dry processing and alternate dielectrics for processing wafers is reported. A two dimensional modeling program was written for the simulation of short channel MOSFETs with nonuniform substrate doping. A key simplifying assumption used is that the majority carriers can be represented by a sheet charge at the silicon dioxide-silicon interface. In solving current continuity equation, the program does not converge. However, solving the two dimensional Poisson equation for the potential distribution was achieved. The status of other 2D MOSFET simulation programs are summarized