On the Low-Frequency Noise Characterization of Z2-FET Devices

This paper addresses the low-frequency noise characterization of Z2-FET structures. These double-gated p-i-n diode devices have been fabricated at STMicroelectronics in an ultrathin body and box (UTBB) 28-nm FDSOI technology and designed to operate as 1T-DRAM memory cells, although other applications, as for example electro static discharge (ESD) protection, have been reported. The experimentally extracted power spectral density of current reveals that the high-diode series resistance, carrier number fluctuations due to oxide traps, and gate leakage current are the main noise contributors at high-current regimes. These mechanisms are expected to contribute to the degradation of cell variability and retention time. Higher flicker noise levels have been reported when increasing the vertical electric field. A simple model considering the contribution of the main noise sources is proposed.This work was supported in part by the European REMINDER 687931 Grant, in part by the Consejeria de Economia, Conocimiento, Empresas y Universidad de la Junta de Andalucia and European Regional Development Fund (ERDF), under Grant SOMM17/6109/ UGR, and in part by the TEC2017-89800-R Project

Low-Frequency Noise Modeling Using EMD with Experimental Results Validation

Low-frequency noise modeling and estimation is a critical issue in the design of analog and digital circuits, especially for short-channel CMOS technologies. The conventional noise models do not fit the experimental results adequately at frequencies close to DC for amplifiers and close to the carrier frequency for oscillators. Furthermore, measuring this noise necessitates the use of specialized and expensive equipment. In this paper, the bound of carrier trapping and releasing are extracted while examining the characteristics of low-frequency noise using the EMD method, and an innovative model based on carrier number fluctuations is proposed. The method introduces a low-cost measurement system for low-frequency noise. The performance accuracy of this measurement system and the proposed model is evaluated and compared with conventional noise modeling methods. The evaluation results demonstrate the success of the proposed measurement setup and model in estimating near-DC noise