Tunable resistivity exponents in the metallic phase of epitaxial nickelates

We report a detailed analysis of the electrical resistivity exponent of thin films of NdNiO3 as a function of epitaxial strain. Thin films under low strain conditions show a linear dependence of the resistivity versus temperature, consistent with a classical Fermi gas ruled by electron-phonon interactions. In addition, the apparent temperature exponent, n, can be tuned with the epitaxial strain between n = 1 and n = 3. We discuss the critical role played by quenched random disorder in the value of n. Our work shows that the assignment of Fermi/Non-Fermi liquid behaviour based on experimentally obtained resistivity exponents requires an in-depth analysis of the degree of disorder in the material

Threshold Switching and Self-Oscillation in Niobium Oxide

Volatile threshold switching, or current controlled negative differential resistance (CC-NDR), has been observed in a range of transition metal oxides. Threshold switching devices exhibit a large non-linear change in electrical conductivity, switching from an insulating to a metallic state under external stimuli. Compact, scalable and low power threshold switching devices are of significant interest for use in existing and emerging technologies, including as a selector element in high-density memory arrays and as solid-state oscillators for hardware-based neuromorphic computing. This thesis explores the threshold switching in amorphous NbOx and the properties of individual and coupled oscillators based on this response. The study begins with an investigation of threshold switching in Pt/NbOx/TiN devices as a function device area, NbOx film thickness and temperature, which provides important insight into the structure of the self-assembled switching region. The devices exhibit combined threshold-memory behaviour after an initial voltage-controlled forming process, but exhibit symmetric threshold switching when the RESET and SET currents are kept below a critical value. In this mode, the threshold and hold voltages are shown to be independent of the device area and film thickness, and the threshold power, while independent of device area, is shown to decrease with increasing film thickness. These results are shown to be consistent with a structure in which the threshold switching volume is confined, both laterally and vertically, to the region between the residual memory filament and the electrode, and where the memory filament has a core-shell structure comprising a metallic core and a semiconducting shell. The veracity of this structure is demonstrated by comparing experimental results with the predictions of a resistor network model, and detailed finite element simulations. The next study focuses on electrical self-oscillation of an NbOx threshold switching device incorporated into a Pearson-Anson circuit configuration. Measurements confirm stable operation of the oscillator at source voltages as low as 1.06 V, and demonstrate frequency control in the range from 2.5 to 20.5 MHz with maximum frequency tuning range of 18 MHz/V. The oscillator exhibit three distinct oscillation regimes: sporadic spiking, stable oscillation and damped oscillation. The oscillation frequency, peak-to-peak amplitude and frequency are shown to be temperature and voltage dependent with stable oscillation achieved for temperatures up to ∼380 K. A physics-based threshold switching model with inclusion of device and circuit parameters is shown to explain the oscillation waveform and characteristic. The final study explores the oscillation dynamics of capacitively coupled Nb/Nb2O5 relaxation oscillators. The coupled system exhibits rich collective behaviour, from weak coupling to synchronisation, depending on the negative differential resistance response of the individual devices, the operating voltage and the coupling capacitance. These coupled oscillators are shown to exhibit stable frequency and phase locking states at source voltages as low as 2.2 V with MHz frequency tunable range. The numerical simulation of the coupled system highlights the role of source voltage, and circuit and device capacitance in controlling the coupling modes and dynamics