523 research outputs found

    Under-the-cell routing to improve manufacturability

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    The progressive miniaturization of technology and the unequal scalability of the BEOL and FEOL layers aggravate the routing congestion problem and have a negative impact on manufacturability. Standard cells are designed in a way that they can be treated as black boxes during physical design. However, this abstraction often prevents an efficient use of its internal free resources. This paper proposes an effective approach for using internal routing resources without sacrificing modularity. By using cell generation tools for regular layouts, libraries are enriched with cell instances that have lateral pins and allow under-the-cell connections between adjacent cells, thus reducing pin count, via count and routing congestion. An approach to generate cells with regular layouts and lateral pins is proposed. Additionally, algorithms to maximize the impact of under-the-cell routing are presented. The proposed techniques are integrated in an industrial design flow. Experimental results show a significant reduction of design rule check violations with negligible impact on timing.Peer ReviewedPostprint (author's final draft

    A High-Performance Triple Patterning Layout Decomposer with Balanced Density

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    Triple patterning lithography (TPL) has received more and more attentions from industry as one of the leading candidate for 14nm/11nm nodes. In this paper, we propose a high performance layout decomposer for TPL. Density balancing is seamlessly integrated into all key steps in our TPL layout decomposition, including density-balanced semi-definite programming (SDP), density-based mapping, and density-balanced graph simplification. Our new TPL decomposer can obtain high performance even compared to previous state-of-the-art layout decomposers which are not balanced-density aware, e.g., by Yu et al. (ICCAD'11), Fang et al. (DAC'12), and Kuang et al. (DAC'13). Furthermore, the balanced-density version of our decomposer can provide more balanced density which leads to less edge placement error (EPE), while the conflict and stitch numbers are still very comparable to our non-balanced-density baseline

    On Regularity and Integrated DFM Metrics

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    Transistor geometries are well into the nanometer regime, keeping with Moore's Law. With this scaling in geometry, problems not significant in the larger geometries have come to the fore. These problems, collectively termed variability, stem from second-order effects due to the small geometries themselves and engineering limitations in creating the small geometries. The engineering obstacles have a few solutions which are yet to be widely adopted due to cost limitations in deploying them. Addressing and mitigating variability due to second-order effects comes largely under the purview of device engineers and to a smaller extent, design practices. Passive layout measures that ease these manufacturing limitations by regularizing the different layout pitches have been explored in the past. However, the question of the best design practice to combat systematic variations is still open. In this work we explore considerations for the regular layout of the exclusive-OR gate, the half-adder and full-adder cells implemented with varying degrees of regularity. Tradeoffs like complete interconnect unidirectionality, and the inevitable introduction of vias are qualitatively analyzed and some factors affecting the analysis are presented. Finally, results from the Calibre Critical Feature Analysis (CFA) of the cells are used to evaluate the qualitative analysis
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