Graphite based Schottky diodes formed on Si, GaAs and 4H-SiC substrates

We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC). Near room temperature, the forward-bias diode characteristics are well described by thermionic emission, and the extracted barrier heights, which are confirmed by capacitance voltage measurements, roughly follow the Schottky-Mott relation. Since the outermost layer of the graphite electrode is a single graphene sheet, we expect that graphene/semiconductor barriers will manifest similar behavior.Comment: 5 pages, 3 figures, 1 tabl

Mechanism of Ambipolar Field-Effect Carrier Injections in One-Dimensional Mott Insulators

To clarify the mechanism of recently reported, ambipolar carrier injections into quasi-one-dimensional Mott insulators on which field-effect transistors are fabricated, we employ the one-dimensional Hubbard model attached to a tight-binding model for source and drain electrodes. To take account of the formation of Schottky barriers, we add scalar and vector potentials, which satisfy the Poisson equation with boundary values depending on the drain voltage, the gate bias, and the work-function difference. The current-voltage characteristics are obtained by solving the time-dependent Schr\"odinger equation in the unrestricted Hartree-Fock approximation. Its validity is discussed with the help of the Lanczos method applied to small systems. We find generally ambipolar carrier injections in Mott insulators even if the work function of the crystal is quite different from that of the electrodes. They result from balancing the correlation effect with the barrier effect. For the gate-bias polarity with higher Schottky barriers, the correlation effect is weakened accordingly, owing to collective transport in the one-dimensional correlated electron systems.Comment: 21 pages, 10 figures, to appear in J. Phys. Soc. Jp

Controlling the Schottky barrier at MoS2|metal contacts by inserting a BN monolayer

Making a metal contact to the two-dimensional semiconductor MoS2 without creating a Schottky barrier is a challenge. Using density functional calculations we show that, although the Schottky barrier for electrons obeys the Schottky-Mott rule for high work function ($\gtrsim 4.7$ eV) metals, the Fermi level is pinned at 0.1-0.3 eV below the conduction band edge of MoS2 for low work function metals, due to the metal-MoS2 interaction. Inserting a boron nitride (BN) monolayer between the metal and the MoS2 disrupts this interaction, and restores the MoS2 electronic structure. Moreover, a BN layer decreases the metal work function of Co and Ni by $\sim 2$ eV, and enables a line-up of the Fermi level with the MoS2 conduction band. Surface modification by adsorbing a single BN layer is a practical method to attain vanishing Schottky barrier heights.Comment: 5 pages, 5 figure

Toward a better understanding of the doping mechanism involved in Mo(tfd-COCF3)3_3)_3 doped PBDTTT-c

In this study, we aim to improve our understanding of the doping mechanism involved in the polymer PBDTTT-c doped with(Mo(tfd-COCF3)3. We follow the evolution of the hole density with dopant concentration to highlight the limits of organic semiconductor doping. To enable the use of doping to enhance the performance of organic electronic devices, doping efficiency must be understood and improved. We report here a study using complementary optical and electrical characterization techniques, which sheds some light on the origin of this limited doping efficiency at high dopant concentration. Two doping mechanisms are considered, the direct charge transfer (DCT) and the charge transfer complex (CTC). We discuss the validity of the model involved as well as its impact on the doping efficiency.Comment: Accepted manuscript, J. Appl. Phy

Space–charge theory applied to the grain boundary impedance of proton conducting BaZr0.9Y0.1O3−δ.

The specific grain interior and grain boundary conductivities, obtained from impedance spectroscopy and the brick layer model, are reported for BaZr0.9Y0.1O3−δ as a function of pO2 and temperature. pO2-dependencies were indicative of dominating ionic and p-type electronic conduction for the grain interior under reducing and oxidizing conditions, respectively, while the grain boundaries showed an additional n-type electronic contribution under reducing conditions. Transmission electron microscopy revealed enrichment of Y in the grain boundary region. These findings indicate the existence of space–charge layers in the grain boundaries. A grain boundary core–space–charge layer model is therefore applied to interpret the data. Using a Mott–Schottky approximation, a Schottky barrier height of 0.5–0.6 V and an effective grain boundary width of 8–10 nm (=2× space–charge layer thickness) is obtained at 250 °C in wet oxygen. Finite-element modelling of the complex impedance over a grain boundary with a space–charge layer depletion of protons yields a distorted semicircle as observed in the impedance spectra