Aging Benefits in Nanometer CMOS Designs

This document is the Accepted Manuscript version of the following article: Daniele Rossi, Vasileios Tenentes, Sheng Yang, Saqib Khursheed, and Bashir M. Al-Hashimi, ‘Aging Benefits in Nanometer CMOS Designs’, IEEE Transactions on Circuits and Systems II: Express Briefs, Vol. 64 (3), May 2016. © 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.n this brief, we show that bias temperature instability (BTI) aging of MOS transistors, together with its detrimental effect for circuit performance and lifetime, presents considerable benefits for static power consumption due to subthreshold leakage current reduction. Indeed, static power reduces considerably, making CMOS circuits more energy efficient over time. Static power reduction depends on transistor stress ratio and operating temperature. We propose a simulation flow allowing us to properly evaluate the BTI aging of complex circuits in order to estimate BTI-induced power reduction accurately. Through HSPICE simulations, we show 50% static power reduction after only one month of operation, which exceeds 78% in ten years. BTI aging benefits for power consumption are also proven with experimental measurements.Peer reviewedFinal Accepted Versio

BTI aware thermal management for reliable DVFS designs

In this paper, we show that dynamic voltage and frequency scaling (DVFS) designs, together with stress-induced BTI variability, exhibit high temperature-induced BTI variability, depending on their workload and operating modes. We show that the impact of temperature-induced variability on circuit lifetime can be higher than that due to stress and exceed 50% over the value estimated considering the circuit average temperature. In order to account for these variabilities in lifetime estimation at design time, we propose a simulation framework for the BTI degradation analysis of DVFS designs accounting for workload and actual temperature profiles. A profile is generated considering statistically probable workload and thermal management constraints by means of the HotSpot tool. Using the proposed framework we explore the expected lifetime of the ethernet circuit from the IWLS05 benchmark suite, synthesized with a 32nm CMOS technology library, for various thermal management constraints. We show that margin-based design can underestimate or overestimate lifetime of DVFS designs by up to 67.8% and 61.9%, respectively. Therefore, the proposed framework allows designers to select appropriately the dynamic thermal management constraints in order to tradeoff long-term reliability (lifetime) and performance with upto 35.8% and 26.3% higher accuracy, respectively, against a temperature-variability unaware BTI analysis

Classification of Resilience Techniques Against Functional Errors at Higher Abstraction Layers of Digital Systems

Nanoscale technology nodes bring reliability concerns back to the center stage of digital system design. A systematic classification of approaches that increase system resilience in the presence of functional hardware (HW)-induced errors is presented, dealing with higher system abstractions, such as the (micro) architecture, the mapping, and platform software (SW). The field is surveyed in a systematic way based on nonoverlapping categories, which add insight into the ongoing work by exposing similarities and differences. HW and SW solutions are discussed in a similar fashion so that interrelationships become apparent. The presented categories are illustrated by representative literature examples to illustrate their properties. Moreover, it is demonstrated how hybrid schemes can be decomposed into their primitive components