Architectural Techniques to Enable Reliable and Scalable Memory Systems

High capacity and scalable memory systems play a vital role in enabling our desktops, smartphones, and pervasive technologies like Internet of Things (IoT). Unfortunately, memory systems are becoming increasingly prone to faults. This is because we rely on technology scaling to improve memory density, and at small feature sizes, memory cells tend to break easily. Today, memory reliability is seen as the key impediment towards using high-density devices, adopting new technologies, and even building the next Exascale supercomputer. To ensure even a bare-minimum level of reliability, present-day solutions tend to have high performance, power and area overheads. Ideally, we would like memory systems to remain robust, scalable, and implementable while keeping the overheads to a minimum. This dissertation describes how simple cross-layer architectural techniques can provide orders of magnitude higher reliability and enable seamless scalability for memory systems while incurring negligible overheads.Comment: PhD thesis, Georgia Institute of Technology (May 2017

Designing Low Cost Error Correction Schemes for Improving Memory Reliability

abstract: Memory systems are becoming increasingly error-prone, and thus guaranteeing their reliability is a major challenge. In this dissertation, new techniques to improve the reliability of both 2D and 3D dynamic random access memory (DRAM) systems are presented. The proposed schemes have higher reliability than current systems but with lower power, better performance and lower hardware cost. First, a low overhead solution that improves the reliability of commodity DRAM systems with no change in the existing memory architecture is presented. Specifically, five erasure and error correction (E-ECC) schemes are proposed that provide at least Chipkill-Correct protection for x4 (Schemes 1, 2 and 3), x8 (Scheme 4) and x16 (Scheme 5) DRAM systems. All schemes have superior error correction performance due to the use of strong symbol-based codes. In addition, the use of erasure codes extends the lifetime of the 2D DRAM systems. Next, two error correction schemes are presented for 3D DRAM memory systems. The first scheme is a rate-adaptive, two-tiered error correction scheme (RATT-ECC) that provides strong reliability (10^10x) reduction in raw FIT rate) for an HBM-like 3D DRAM system that services CPU applications. The rate-adaptive feature of RATT-ECC enables permanent bank failures to be handled through sparing. It can also be used to significantly reduce the refresh power consumption without decreasing the reliability and timing performance. The second scheme is a two-tiered error correction scheme (Config-ECC) that supports different sized accesses in GPU applications with strong reliability. It addresses the mismatch between data access size and fixed sized ECC scheme by designing a product code based flexible scheme. Config-ECC is built around a core unit designed for 32B access with a simple extension to support 64B and 128B accesses. Compared to fixed 32B and 64B ECC schemes, Config-ECC reduces the failure in time (FIT) rate by 200x and 20x, respectively. It also reduces the memory energy by 17% (in the dynamic mode) and 21% (in the static mode) compared to a state-of-the-art fixed 64B ECC scheme.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

LOT-ECC: LOcalized and tiered reliability mechanisms for commodity memory systems

pre-printMemory system reliability is a serious and growing concern in modern servers. Existing chipkill-level mem- ory protection mechanisms suffer from several draw- backs. They activate a large number of chips on ev- ery memory access - this increases energy consump- tion, and reduces performance due to the reduction in rank-level parallelism. Additionally, they increase ac- cess granularity, resulting in wasted bandwidth in the absence of sufficient access locality. They also restrict systems to use narrow-I/O x4 devices, which are known to be less energy-efficient than the wider x8 DRAM de- vices. In this paper, we present LOT-ECC, a local- ized and multi-tiered protection scheme that attempts to solve these problems. We separate error detection and error correction functionality, and employ simple checksum and parity codes effectively to provide strong fault-tolerance, while simultaneously simplifying imple- mentation. Data and codes are localized to the same DRAM row to improve access efficiency. We use sys- tem firmware to store correction codes in DRAM data memory and modify the memory controller to handle data mapping. We thus build an effective fault-tolerance mechanism that provides strong reliability guarantees, activates as few chips as possible (reducing power con- sumption by up to 44.8% and reducing latency by up to 46.9%), and reduces circuit complexity, all while work- ing with commodity DRAMs and operating systems. Fi- nally, we propose the novel concept of a heterogeneous DIMM that enables the extension of LOT-ECC to x16 and wider DRAM parts

LOT-ECC: LOcalized and tiered reliability mechanisms for commodity memory systems

pre-printMemory system reliability is a serious and growing concern in modern servers. Existing chipkill-level mem- ory protection mechanisms suffer from several draw- backs. They activate a large number of chips on ev- ery memory access - this increases energy consump- tion, and reduces performance due to the reduction in rank-level parallelism. Additionally, they increase ac- cess granularity, resulting in wasted bandwidth in the absence of sufficient access locality. They also restrict systems to use narrow-I/O x4 devices, which are known to be less energy-efficient than the wider x8 DRAM de- vices. In this paper, we present LOT-ECC, a local- ized and multi-tiered protection scheme that attempts to solve these problems. We separate error detection and error correction functionality, and employ simple checksum and parity codes effectively to provide strong fault-tolerance, while simultaneously simplifying imple- mentation. Data and codes are localized to the same DRAM row to improve access efficiency. We use sys- tem firmware to store correction codes in DRAM data memory and modify the memory controller to handle data mapping. We thus build an effective fault-tolerance mechanism that provides strong reliability guarantees, activates as few chips as possible (reducing power con- sumption by up to 44.8% and reducing latency by up to 46.9%), and reduces circuit complexity, all while work- ing with commodity DRAMs and operating systems. Fi- nally, we propose the novel concept of a heterogeneous DIMM that enables the extension of LOT-ECC to x16 and wider DRAM parts

Doctor of Philosophy

dissertationThe computing landscape is undergoing a major change, primarily enabled by ubiquitous wireless networks and the rapid increase in the use of mobile devices which access a web-based information infrastructure. It is expected that most intensive computing may either happen in servers housed in large datacenters (warehouse- scale computers), e.g., cloud computing and other web services, or in many-core high-performance computing (HPC) platforms in scientific labs. It is clear that the primary challenge to scaling such computing systems into the exascale realm is the efficient supply of large amounts of data to hundreds or thousands of compute cores, i.e., building an efficient memory system. Main memory systems are at an inflection point, due to the convergence of several major application and technology trends. Examples include the increasing importance of energy consumption, reduced access stream locality, increasing failure rates, limited pin counts, increasing heterogeneity and complexity, and the diminished importance of cost-per-bit. In light of these trends, the memory system requires a major overhaul. The key to architecting the next generation of memory systems is a combination of the prudent incorporation of novel technologies, and a fundamental rethinking of certain conventional design decisions. In this dissertation, we study every major element of the memory system - the memory chip, the processor-memory channel, the memory access mechanism, and memory reliability, and identify the key bottlenecks to efficiency. Based on this, we propose a novel main memory system with the following innovative features: (i) overfetch-aware re-organized chips, (ii) low-cost silicon photonic memory channels, (iii) largely autonomous memory modules with a packet-based interface to the proces- sor, and (iv) a RAID-based reliability mechanism. Such a system is energy-efficient, high-performance, low-complexity, reliable, and cost-effective, making it ideally suited to meet the requirements of future large-scale computing systems

Doctor of Philosophy in Computing

dissertatio

Addressing multiple bit/symbol errors in DRAM subsystem

As DRAM technology continues to evolve towards smaller feature sizes and increased densities, faults in DRAM subsystem are becoming more severe. Current servers mostly use CHIPKILL based schemes to tolerate up-to one/two symbol errors per DRAM beat. Such schemes may not detect multiple symbol errors arising due to faults in multiple devices and/or data-bus, address bus. In this article, we introduce Single Symbol Correction Multiple Symbol Detection (SSCMSD)—a novel error handling scheme to correct single-symbol errors and detect multi-symbol errors. Our scheme makes use of a hash in combination with Error Correcting Code (ECC) to avoid silent data corruptions (SDCs). We develop a novel scheme that deploys 32-bit CRC along with Reed-Solomon code to implement SSCMSD for a ×4 based DDR4 system. Simulation based experiments show that our scheme effectively guards against device, data-bus and address-bus errors only limited by the aliasing probability of the hash. Our novel design enabled us to achieve this without introducing additional READ latency. We need 19 chips per rank, 76 data bus-lines and additional hash-logic at the memory controller