The BLIXER, a Wideband Balun-LNA-I/Q-Mixer Topology

This paper proposes to merge an I/Q current-commutating mixer with a noise-canceling balun-LNA. To realize a high bandwidth, the real part of the impedance of all RF nodes is kept low, and the voltage gain is not created at RF but in baseband where capacitive loading is no problem. Thus a high RF bandwidth is achieved without using inductors for bandwidth extension. By using an I/Q mixer with 25% duty-cycle LO waveform the output IF currents have also 25% duty-cycle, causing 2 times smaller DC-voltage drop after IF filtering. This allows for a 2 times increase in the impedance level of the IF filter, rendering more voltage gain for the same supply headroom. The implemented balun-LNA-I/Q-mixer topology achieves > 18 dB conversion gain, a flat noise figure < 5.5 dB from 500 MHz to 7 GHz, IIP2 = +20 dBm and IIP3 = -3 dBm. The core circuit consumes only 16 mW from a 1.2 V supply voltage and occupies less than 0.01 mm2 in 65 nm CMOS

A 300-800MHz Tunable Filter and Linearized LNA applied in a Low-Noise Harmonic-Rejection RF-Sampling Receiver

A multiband flexible RF-sampling receiver aimed at software-defined radio is presented. The wideband RF sampling function is enabled by a recently proposed discrete-time mixing downconverter. This work exploits a voltage-sensing LNA preceded by a tunable LC pre-filter with one external coil to demonstrate an RF-sampling receiver with low noise figure (NF) and high harmonic rejection (HR). The second-order LC filter provides voltage pre-gain and attenuates the source noise aliasing, and it also improves the HR ratio of the sampling downconverter. The LNA consists of a simple amplifier topology built from inverters and resistors to improve the third-order nonlinearity via an enhanced voltage mirror technique. The RF-sampling receiver employs 8 times oversampling covering 300 to 800 MHz in two RF sub-bands. The chip is realized in 65 nm CMOS and the measured gain across the band is between 22 and 28 dB, while achieving a NF between 0.8 to 4.3 dB. The IIP2 varies between +38 and +49 dBm and the IIP3 between -14 dBm and -9 dBm, and the third and fifth order HR ratios are more than 60 dB. The LNA and downconverter consumes 6 mW, and the clock generator takes 12 mW at 800 MHz RF.\ud \u

A 0.1–5.0 GHz flexible SDR receiver with digitally assisted calibration in 65 nm CMOS

© 2017 Elsevier Ltd. All rights reserved.A 0.1–5.0 GHz flexible software-defined radio (SDR) receiver with digitally assisted calibration is presented, employing a zero-IF/low-IF reconfigurable architecture for both wideband and narrowband applications. The receiver composes of a main-path based on a current-mode mixer for low noise, a high linearity sub-path based on a voltage-mode passive mixer for out-of-band rejection, and a harmonic rejection (HR) path with vector gain calibration. A dual feedback LNA with “8” shape nested inductor structure, a cascode inverter-based TCA with miller feedback compensation, and a class-AB full differential Op-Amp with Miller feed-forward compensation and QFG technique are proposed. Digitally assisted calibration methods for HR, IIP2 and image rejection (IR) are presented to maintain high performance over PVT variations. The presented receiver is implemented in 65 nm CMOS with 5.4 mm2 core area, consuming 9.6–47.4 mA current under 1.2 V supply. The receiver main path is measured with +5 dB m/+5dBm IB-IIP3/OB-IIP3 and +61dBm IIP2. The sub-path achieves +10 dB m/+18dBm IB-IIP3/OB-IIP3 and +62dBm IIP2, as well as 10 dB RF filtering rejection at 10 MHz offset. The HR-path reaches +13 dB m/+14dBm IB-IIP3/OB-IIP3 and 62/66 dB 3rd/5th-order harmonic rejection with 30–40 dB improvement by the calibration. The measured sensitivity satisfies the requirements of DVB-H, LTE, 802.11 g, and ZigBee.Peer reviewedFinal Accepted Versio

A 77-GHz Phased-Array Transceiver With On-Chip Antennas in Silicon: Receiver and Antennas

In this paper, we present the receiver and the on-chip antenna sections of a fully integrated 77-GHz four-element phased-array transceiver with on-chip antennas in silicon. The receiver section of the chip includes the complete down-conversion path comprising low-noise amplifier (LNA), frequency synthesizer, phase rotators, combining amplifiers, and on-chip dipole antennas. The signal combining is performed using a novel distributed active combining amplifier at an IF of 26 GHz. In the LO path, the output of the 52-GHz VCO is routed to different elements and can be phase shifted locally by the phase rotators. A silicon lens on the backside is used to reduce the loss due to the surface-wave power of the silicon substrate. Our measurements show a single-element LNA gain of 23 dB and a noise figure of 6.0 dB. Each of the four receive paths has a gain of 37 dB and a noise figure of 8.0 dB. Each on-chip antenna has a gain of +2 dBi

A Fully Integrated 24-GHz Eight-Element Phased-Array Receiver in Silicon

This paper reports the first fully integrated 24-GHz eight-element phased-array receiver in a SiGe BiCMOS technology. The receiver utilizes a heterodyne topology and the signal combining is performed at an IF of 4.8 GHz. The phase-shifting with 4 bits of resolution is realized at the LO port of the first down-conversion mixer. A ring LC voltage-controlled oscillator (VCO) generates 16 different phases of the LO. An integrated 19.2-GHz frequency synthesizer locks the VCO frequency to a 75-MHz external reference. Each signal path achieves a gain of 43 dB, a noise figure of 7.4 dB, and an IIP3 of -11 dBm. The eight-path array achieves an array gain of 61 dB and a peak-to-null ratio of 20 dB and improves the signal-to-noise ratio at the output by 9 dB

Design Considerations of a Sub-50 {\mu}W Receiver Front-end for Implantable Devices in MedRadio Band

Emerging health-monitor applications, such as information transmission through multi-channel neural implants, image and video communication from inside the body etc., calls for ultra-low active power (<50${\mu}$W) high data-rate, energy-scalable, highly energy-efficient (pJ/bit) radios. Previous literature has strongly focused on low average power duty-cycled radios or low power but low-date radios. In this paper, we investigate power performance trade-off of each front-end component in a conventional radio including active matching, down-conversion and RF/IF amplification and prioritize them based on highest performance/energy metric. The analysis reveals 50${\Omega}$ active matching and RF gain is prohibitive for 50${\mu}$W power-budget. A mixer-first architecture with an N-path mixer and a self-biased inverter based baseband LNA, designed in TSMC 65nm technology show that sub 50${\mu}$W performance can be achieved up to 10Mbps (< 5pJ/b) with OOK modulation.Comment: Accepted to appear on International Conference on VLSI Design 2018 (VLSID

A 1.2 V and 69 mW 60 GHz Multi-channel Tunable CMOS Receiver Design

A multi-channel receiver operating between 56 GHz and 70 GHz for coverage of different 60 GHz bands worldwide is implemented with a 90 nm Complementary Metal-Oxide Semiconductor (CMOS) process. The receiver containing an LNA, a frequency down-conversion mixer and a variable gain amplifier incorporating a band-pass filter is designed and implemented. This integrated receiver is tested at four channels of centre frequencies 58.3 GHz, 60.5 GHz, 62.6 GHz and 64.8 GHz, employing a frequency plan of an 8 GHz-intermediate frequency (IF). The achieved conversion gain by coarse gain control is between 4.8 dB–54.9 dB. The millimeter-wave receiver circuit is biased with a 1.2V supply voltage. The measured power consumption is 69 mW

Integrated phased array systems in silicon

Silicon offers a new set of possibilities and challenges for RF, microwave, and millimeter-wave applications. While the high cutoff frequencies of the SiGe heterojunction bipolar transistors and the ever-shrinking feature sizes of MOSFETs hold a lot of promise, new design techniques need to be devised to deal with the realities of these technologies, such as low breakdown voltages, lossy substrates, low-Q passives, long interconnect parasitics, and high-frequency coupling issues. As an example of complete system integration in silicon, this paper presents the first fully integrated 24-GHz eight-element phased array receiver in 0.18-μm silicon-germanium and the first fully integrated 24-GHz four-element phased array transmitter with integrated power amplifiers in 0.18-μm CMOS. The transmitter and receiver are capable of beam forming and can be used for communication, ranging, positioning, and sensing applications