The ‘Autonomous Nationalists’: new developments and contradictions in the German neo-Nazi movement

This article examines the action repertoires, symbolism and political ideology of the ‘Autonomous Nationalists’ (Autonome Nationalisten in German) that have emerged as a sub-cultural youth trend within the German extreme right. Agitating within a landscape of networked, extra-parliamentary neo-Nazi organisations, Autonomous Nationalist activism forms a specific subsection within the German extreme right that copies the styles, codes and militancy of anarchist and radical left activists. A political analysis of its texts and slogans reveals a self- definition as ‘anti-capitalist’ and ‘national socialist’. A particular mobilisation potential beyond the traditional and party-political forms of extreme nationalism is fuelled by an openly displayed confrontational militancy, mostly directed at anti-fascist and left-wing groups and individuals, and by strong counter-cultural aspects. The article analyses how this emphasis on individual forms of expressions and rebellion appears to stand in contradiction with fascist understandings of organisation and has put the movement at odds with the established neo-Nazi scene in Germany

Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO2_2 interface

SiC based metal-oxide-semiconductor field-effect transistors (MOSFETs) have gained a significant importance in power electronics applications. However, electrically active defects at the SiC/SiO$_2$ interface degrade the ideal behavior of the devices. The relevant microscopic defects can be identified by electron paramagnetic resonance (EPR) or electrically detected magnetic resonance (EDMR). This helps to decide which changes to the fabrication process will likely lead to further increases of device performance and reliability. EDMR measurements have shown very similar dominant hyperfine (HF) spectra in differently processed MOSFETs although some discrepancies were observed in the measured $g$-factors. Here, the HF spectra measured of different SiC MOSFETs are compared and it is argued that the same dominant defect is present in all devices. A comparison of the data with simulated spectra of the C dangling bond (P$_\textrm{bC}$) center and the silicon vacancy (V$_\textrm{Si}$) demonstrates that the P$_\textrm{bC}$ center is a more suitable candidate to explain the observed HF spectra.Comment: Accepted for publication in the Journal of Applied Physic

Interface

International audienceGenerally speaking, an interface is the point, area or surface in which converge two or more distinct entities. Therefore, the term interface can be used to denote any mean that realizes the interconnection of two entities

Interface Collisions

We provide a theoretical framework to analyze the properties of frontal collisions of two growing interfaces considering different short range interactions between them. Due to their roughness, the collision events spread in time and form rough domain boundaries, which defines collision interfaces in time and space. We show that statistical properties of such interfaces depend on the kinetics of the growing interfaces before collision, but are independent of the details of their interaction and of their fluctuations during the collision. Those properties exhibit dynamic scaling with exponents related to the growth kinetics, but their distributions may be non-universal. These results are supported by simulations of lattice models with irreversible dynamics and local interactions. Relations to first passage processes are discussed and a possible application to grain boundary formation in two-dimensional materials is suggested.Comment: Paper with 12 pages and 2 figures; supplemental material with 4 pages and 3 figure

Computer/computer interface

System synchronizes data transfer between two computers by generating data strobe pulses when computers are ready for data transfer. In addition, interface filters noise by sampling

Learning from the Success of MPI

The Message Passing Interface (MPI) has been extremely successful as a portable way to program high-performance parallel computers. This success has occurred in spite of the view of many that message passing is difficult and that other approaches, including automatic parallelization and directive-based parallelism, are easier to use. This paper argues that MPI has succeeded because it addresses all of the important issues in providing a parallel programming model.Comment: 12 pages, 1 figur

Interface Simulation Distances

The classical (boolean) notion of refinement for behavioral interfaces of system components is the alternating refinement preorder. In this paper, we define a distance for interfaces, called interface simulation distance. It makes the alternating refinement preorder quantitative by, intuitively, tolerating errors (while counting them) in the alternating simulation game. We show that the interface simulation distance satisfies the triangle inequality, that the distance between two interfaces does not increase under parallel composition with a third interface, and that the distance between two interfaces can be bounded from above and below by distances between abstractions of the two interfaces. We illustrate the framework, and the properties of the distances under composition of interfaces, with two case studies.Comment: In Proceedings GandALF 2012, arXiv:1210.202

Designer/industry interface

The transcript from the discussion panel section of this event provides an interesting exchange of ideas around the notion of textile reuse and value. Following on from the exhibition Ever & Again: Experimental Recycled Textiles in October 2007, the Textiles Environment Design (TED) Project organized a one day Textiles Upcycling Symposium at Chelsea College of Art & Design on Friday 18th July 2008. The aims of the Symposium were to engage the audience and invited fashion and interior textile designers in thinking about high quality and innovative recycling practices for the future (‘upcycling’). The morning session featured the work of 12 of the most well known designers working in this field, including Orsola De Castro – ‘From Somewhere’, Kate Goldsworthy, Amy Twigger Holroyd – ‘Keep and Share’, Emmeline Child – ‘Emmeline4Re’, Kerry Seager - ‘Junky Styling’, Cyndi Rhodes – ‘Worn Again’, and Barley Massey – ‘Fabrications’. For the afternoon session invited key participants from industry contributed to an informal panel discussion with the designers and audience, to discuss the potential for shifting these ideas into mainstream and larger scale commercial production. This was chaired by sustainable textiles expert Dr Jo Heeley. The day also included a keynote speech from Professor Marie O’Mahony and a presentation of the outcomes of the three-year research project led by Rebecca Earley, which has involved teaching staff, researchers and students from Chelsea College of Art & Design

On the numerical integration of isogeometric interface elements

Zero-thickness interface elements are commonly used in computational mechanics to model material interfaces or to introduce discontinuities. The latter class requires the existence of a non-compliant interface prior to the onset of fracture initiation. This is accomplished by assigning a high dummy stiffness to the interface prior to cracking. This dummy stiffness is known to introduce oscillations in the traction profile when using Gauss quadrature for the interface elements, but these oscillations are removed when resorting to a Newton-Cotes integration scheme 1. The traction oscillations are aggravated for interface elements that use B-splines or non-uniform rational B-splines as basis functions (isogeometric interface elements), and worse, do not disappear when using Newton-Cotes quadrature. An analysis is presented of this phenomenon, including eigenvalue analyses, and it appears that the use of lumped integration (at the control points) is the only way to avoid the oscillations in isogeometric interface elements. New findings have also been obtained for standard interface elements, for example that oscillations occur in the relative displacements at the interface irrespective of the value of the dummy stiffness